MSM511000
Abstract: ZIP20-P-400 msm511000h
Text: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power
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MSM511000H_
576-Word
MSM511000H
18-pin
26/20-pin
20-pin
MSM511000
ZIP20-P-400
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FST 460 TRANSISTOR
Abstract: m5205 oki MSM6258 FST 460 KBR 6.0 MSM6258V QFP44-P-910-V1K Transistor FST 460 4813b MSM6258VJS
Text: O K I Semiconductor ISM6258/MSM6258V ADPCM SPEECH PROCESSOR FOR SOLID STATE RECORDER TO CUSTOMERS FOR NEW CIRCUIT DESIGN For a new circuit design, i t is recom m ended to use not the MSM6258, b u t the M SM6388/ MSM6588 as described later. The MSM6258 has an 8-bit AD converter and
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ISM6258/MSM6258V
MSM6258,
MSM6388/
MSM6588
MSM6258
MSM6388/MSM6588
12-bit
MSM6388
FST 460 TRANSISTOR
m5205 oki
FST 460
KBR 6.0
MSM6258V
QFP44-P-910-V1K
Transistor FST 460
4813b
MSM6258VJS
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M S M 6652-X X X /M S M 6653-X X X / M S M 6654-X X X /M S M 6655-X X X / M SM 6656-XXX_ Internal MASK ROM Speech Synthesis LSI GENERAL DESCRIPTION The M SM 6650 fam ily is a su ccesso r to the M SM 6375 fam ily that are speech synthesis LSIs w ith
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6652-X
6653-X
6654-X
6655-X
6656-XXX_
12bit
09MGU
09MGWU
2424D
MSM6652/6653/6654/6655/6656
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bl 9 a2
Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Text: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.
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MSM511000B/BL_
576-Word
MSM511000B/BL
cycles/64ms
MSM5110OOB/BL
242i4D
00177fa3
bl 9 a2
18-PIN
20-PIN
26-PIN
ZIP20-P-400
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B724e
Abstract: DD102b B72L
Text: O K I Semiconductor MSM51V4170/SL_ 262,144-W ord x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T h e M SM 5 1 V 4 1 7 0 /SL is a n e w g en eratio n D y n a m ic R A M o rg an ized as 262,144-word x 16-bit configuration. T h e technology used to fabricate the M SM 5 1 V 4 1 7 0 /SL is O K I's C M O S silico n gate process
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MSM51V4170/SL_
144-Word
16-Bit
MSM51V4170/SL
cycles/16ms,
B724e
DD102b
B72L
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MSM OKI
Abstract: No abstract text available
Text: O K I Semiconductor M S M 5 1 1 6 6 4 A / A L _ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/AL is a n ew generation dynam ic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the M SM 511664A/AL is OKI's CMOS silicon gate process technology.
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MSM511664A/AL
536-Word
16-Bit
MSM511664A/AL
16-bit.
cycles/32ms
MSM OKI
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oki 117400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 117400 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The M SM 5117400 is a n ew generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.
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304-Word
304-w
MSM5117400
b7E424D
MSM5117400
00173bt.
oki 117400
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