IP173
Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)
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kuka-2003-inhalt
IP173
kuka
3 phase bridge fully controlled rectifier
diode 1600 rectifier
B6HK
EUPEC tt 105 N 16
100N
B6U 205
3 phase bridge rectifier
B6u 08
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B6U 205
Abstract: b6 diode B6U205 S208A
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 205 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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B6U 205
Abstract: A1375 0kv3
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 205 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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Untitled
Abstract: No abstract text available
Text: Line Reactors RWK 212 Three-phase Line Reactor for Motor Drive Applications Provision of 4% impedance Reduction of mains harmonics Reduction of commutation notches Protection of motor drive electronics Limitation of inrush currents Approvals UL508C up to 400A. For use with AC or DC
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UL508C
C/400V
Mil-HB-217F)
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Untitled
Abstract: No abstract text available
Text: Line Reactors RWK 212 Three-phase Line Reactor for Motor Drive Applications Provision of 4% impedance Reduction of mains harmonics Reduction of commutation notches Protection of motor drive electronics Approvals UL508C up to 400A. For use with AC or DC drives (power conversion equipment only
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UL508C
UL508C,
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Untitled
Abstract: No abstract text available
Text: Line Reactors RWK 212 Three-phase Line Reactor for Motor Drive Applications Provision of 4% impedance Reduction of mains harmonics Reduction of commutation notches Protection of motor drive electronics Approvals UL508C up to 400A. For use with AC or DC drives (power conversion equipment only
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UL508C
UL508C,
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Untitled
Abstract: No abstract text available
Text: Three-phase Line Reactor for Motor Drive Applications Line Reactors RWK 212 Provision of 4% impedance Reduction of mains harmonics Approvals Reduction of commutation notches Protection of motor drive electronics Limitation of inrush currents Improvement of true power factor
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UL508C
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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Untitled
Abstract: No abstract text available
Text: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC
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OCR Scan
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0D021A4
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B2HKF
Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °
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