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Infineon Technologies AG DDB6U145N16LHOSA1 DIODE MODULE GP 1600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DDB6U145N16LHOSA1	Tray			1	1 $183.84 10 $183.84 100 $169.7375 1000 $169.7375 10000 $169.7375	Buy Now
Avnet Americas	DDB6U145N16LHOSA1	Tray		20 Weeks	4	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	DDB6U145N16LHOSA1	Bulk	5		1	1 $177.66 10 $177.29 100 $176.53 1000 $176.53 10000 $176.53	Buy Now
Rochester Electronics	DDB6U145N16LHOSA1		2		1	1 $188.6 10 $188.6 100 $177.28 1000 $160.31 10000 $160.31	Buy Now
TME	DDB6U145N16LHOSA1				1	1 $243.91 10 $194.5 100 $194.5 1000 $194.5 10000 $194.5	Get Quote

Chip1Stop	DDB6U145N16LHOSA1	Tray	4			1 $169 10 $169 100 $169 1000 $169 10000 $169	Buy Now
EBV Elektronik	DDB6U145N16LHOSA1			16 Weeks	4	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG DDB6U145N16L Diode Modules 1600V 145A UN-CNTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	DDB6U145N16L					1 $194.72 10 $194.72 100 $175.54 1000 $175.54 10000 $175.54	Get Quote

B6U 145 N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IP173 Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08 Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)	Original	PDF	kuka-2003-inhalt IP173 kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
B6U 145 n Abstract: B6U 145 B6U145N B6U 220 Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM	Original	PDF	45l/s) 90l/s) B6U 145 n B6U 145 B6U145N B6U 220
KM-17 Abstract: heatsink KM 60 B6U 145 Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM	Original	PDF	45l/s) 90l/s) KM-17 heatsink KM 60 B6U 145
B43875 Abstract: 20/j1nac3 semikron SKS SKHI 20 SKHI 20 opa semikron SKD 75 gal CAPACITOR B43875 j1nac3 B6CI 16 V12 LA 125 Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMIX Stack 1 Three-phase inverter SKS 100F B6U+B6CI+E1CIF 80 V12 SEMiX 352 GB 128 SEMiX 302 GAL 126 SKD 145/16 P122 / 550 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb	Original	PDF	10min B43875 A9478 20/j1nac3 semikron SKS SKHI 20 SKHI 20 opa semikron SKD 75 gal CAPACITOR B43875 j1nac3 B6CI 16 V12 LA 125
B6U145N Abstract: B6HK TDB6HK135N B6HK135N B6U 205 100N B6U215N TDB6HK165N rectifier bridge 9 v TT 80 N 1200 Text: Click on outline no. IsoPACK Bridge Rectifier & AC-Switches VDRM, VRRM Type V VDSM = VDRM VRSM = VRRM+100V IFRMSM IFSM Id/Tc ITRMSM (ITSM) A/°C A A 10 ms, Tvj max IRMS/TC V(TO) rT RthJC Tvj max V Tvj=Tvj max mΩ °C Tvj=Tvj max °C/W per arm outline A/°C	Original	PDF	B6U215N B6U145N B6HK TDB6HK135N B6HK135N B6U 205 100N TDB6HK165N rectifier bridge 9 v TT 80 N 1200
b6u100 Abstract: B6U SKS b6u 500 semikron semikron SKS Text: SKS 160F B6U 100 V16 Characteristics Symbol Conditions min. typ. max. Unit 161 A 119 179 A 106 212 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three phase uncontrolled	Original	PDF	Px120/120F b6u100 B6U SKS b6u 500 semikron semikron SKS
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD B6U 144 N 10.16.R ECONO 80 104,8 80 70,4 60,96 15,24 N- 5,5 P+ R NS P+ T 3,81 11,43 57,15 93±0,2 max. 107,5 P+ 13 R 1-4 S 5-8 T 9-12 P+ 16 N- 14 N- 17 VWK Sep. 1996	Original	PDF	D-59581
Untitled Abstract: No abstract text available Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD B6U 144 N 10.16.R ECONO 80 104,8 80 70,4 60,96 15,24 N- 5,5 P+ R NS P+ T 3,81 11,43 57,15 93±0,2 max. 107,5 P+ 13 R 1-4 S 5-8 T 9-12 P+ 16 N- 14 N- 17 VWK Sep. 1996	Original	PDF
skiip 613 gb Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2	Original	PDF
semiconductor Abstract: hirect H507CH Hirect diode H400TB Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5	Original	PDF
UPC 494 Application Note Abstract: DC-20 TGF2022-48 lg 7607 36078 Text: Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-48 Key Features and Performance • • • • • • • • Product Description Frequency Range: DC - 20 GHz > 37 dBm Nominal Psat 58% Maximum PAE 45 dBm Nominal OIP3	Original	PDF	TGF2022-48 360-600mA 360mA 1200mA) TGF2022-48 DC-20 0007-inch UPC 494 Application Note lg 7607 36078
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Untitled Abstract: No abstract text available Text: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max 103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC	OCR Scan	PDF	0D021A4
B2HKF Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/\|JS DIN IEC 747-6 V mA tvj = 1 8 0 °	OCR Scan	PDF