b4574
Abstract: B39221-B4574-Z910 QCC12B SAW Components Bandpass Filter
Text: SAW Components Bandpass Filter B4574 215,0 MHz Preliminary Data Ceramic package QCC12B Features ● Low-loss IF filter for mobile telephone ● Channel selection in GSM, PCN, PCS systems ● Ceramic SMD package Terminals ● Gold-plated Ni Dimensions in mm, approx. weight 0,2 g
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B4574
QCC12B
B39221-B4574-Z910
C61157-A7-A48
F61074-V8038-Z000
b4574
B39221-B4574-Z910
QCC12B
SAW Components Bandpass Filter
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BB-B4574
Abstract: No abstract text available
Text: BRIGHT LED ELECTRONICS CORP. BB-B4574 SINCE 1981 ● Features: ●Package dimensions 1. Chip material: GaAsP/GaP 5.0 .197 2. Emitted color : Hi-Eff Red 3. Lens Appearance : Red Diffused 4. Pulse Rate 2.4 Hz (VDD=5V) 5. Operating Voltage：3V~12V (DC) 6. Easily be driven by TTL & C-MOS
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BB-B4574
BB-B4574
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F00004
Abstract: No abstract text available
Text: E C ELECTRONICS INC ST ]> • b457SSS ÜDD5S24 2 « N E C E D," T_41_07 NEC Fiber Optic Devices OD-8316-U LD Module 1.3 /¿m OD-8316 is designed to couple LD (Laser Diode) output light efficiently to optical fiber. “ Ge photodiode is installed in OD-8316 for APC (Automatic Power Control) and
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b457SSS
DD5S24
OD-8316-U
OD-8316
F0-0004
F00004
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UPA1457H
Abstract: No abstract text available
Text: N EC ELECTRONICS INC Tfi D Ë J b457555 D O l I l b ? fl | ~ -7 - . * ^ ¿¿P A PNP 3 .^ 5* 1457H SILICON EPITA X IA L POWER T R A N S I S T O R L O W S P E E D S W I T CH I N G D A R L I N G T O N ARRAY DESCRIPTION The /xPA1457H Is an array of four darlington power transistors. It Is
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b457555
1457H
uPA1457H
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Untitled
Abstract: No abstract text available
Text: N E C NEC ELECTRONICS INC 72 DE 72C 0 9 1 6 5 F b457525 SG205D/T GREEN GaP LEDs NEC Electronics Inc. NEPOC SERIES Absolute Maxim um R a tin gs Description Ta = +25°C The SG 2 0 5 D and SG 20 5 T are G a P Gallium Phos phide light emitting diodes which are mounted on lead
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b457525
SG205D/T
100mW
SG205D/luminous
SG205T.
SG205D/T
hM27525
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Untitled
Abstract: No abstract text available
Text: N E C E L E C T R ONI C S I NC b2E T> • b45752S OOBfiOBR I E S B N E C E DATA SHEET N EC LA SER DIODE NDL5800D1 ELECTRON DEVICE 1 310 nm O PT IC A L F IB E R C O M M U N IC A T IO N S InG aA sP P H A S E -S H IF T E D D F B -D C -P B H LASER D IO D E FOR 2 .5 G b/s
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b45752S
NDL5800D1
NDL5800D1
bH27525
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NEC PS1001
Abstract: PS1001 lb30
Text: N E C ELECTRONICS INC 3GE D • b457555 0G3it.3b 1 ■ PH O TO O T~H1'#3 C O U P LE R PS1001 PHO TO C O U PLER IN D U S T R IA L U SE DESCRIPTION Tha PS 1001 is an optically coupled isolator containing a GaAs light emitting diode and an NPN sillicon photo transistor.
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b42755S
PS1001
PS1001
40uax.
37max.
b42752S
02eil33li
T-41-83
NEC PS1001
lb30
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lm575
Abstract: 2SK827 transistor DK RN lm5752 F1012
Text: N E C ELECTRONICS INC "t û 6427525 N E C ELECTRONICS DEI INC b45755S 98D MOS D O n O O l 19001 F I E L D D E F F E C T ELECTRON DP/ICS 7 | T '- " 17-13 T R A N S I S T O R 2SK827 . F A S T S W I T C H I N G N - C H A N N E L S I L I C O N POW ER MOS F E T
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b4275ES
Q11DD1
2SK827
T-39-13
LM57525
DD11D04
JS71CS
J2263S
lm575
2SK827
transistor DK RN
lm5752
F1012
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Darlington TRANS PNP DARL -100V -5A
Abstract: PUS300 NILS GREASE
Text: N E C ELECTRONICS INC Tfi D Ë J b457SaS DOlIlb? . P OWE R fl | ~ -7 - . * ^ 3 TRANSISTOR - ARRA ¿¿P A 1 4 5 7 H PNP SI LI CON LOW • E P I T A X I A L SPEED POWER TRANSISTOR ARRAY S W I T CH I N G D A R L I N G T O N DESCRIPTION The /xPA1457H Is an array of four darlington power tra n s isto rs . I t Is
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b457SaS
uPA1457H
b457525
Darlington TRANS PNP DARL -100V -5A
PUS300
NILS GREASE
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4H74
Abstract: NE68337 S21E
Text: N E C / C A L IF O R N IA 1SE NEC D • b457414 000145b NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES T -ÌH 5 1 NE68337 OUTLINE DIMENSIONS Units in mm • LOW OPERATING VOLTAGE OUTLINE 37 • LOW POWER CO NSUM PTION • HIG H INPUT IMPEDANCE DESCRIPTION AND APPLICATIONS
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b427414
NE68337
NE68337
4H74
S21E
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Untitled
Abstract: No abstract text available
Text: 30E D N E . C ELECTRONICS INC • b457SSS ODaTÔOa 3 ■ -p-¿f|-73 PHOTO INTERRUPTER PS5001LR PHOTO IC INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS U n it : mm The PS5001LR photo interrupter module is a GaAs Light Emitting Diode coupled to a Si mono 3 .0 = 0 .2
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b457SSS
PS5001LR
PS5001LR
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Untitled
Abstract: No abstract text available
Text: b2E D • b457S25 0037551 34T H N E C E LASER DIODE N E C ELECTRONICS INC / NDL5600D 1 310 nm O PTICA L FIBER C O M M U N IC A T IO N S InG aAsP P H A SE -SH IF T E D D F B D C P B H LA SER D IO D E D E S C R IP T IO N N D L 5 6 0 0 D is a 1 310 nm D F B Distributed Feed-back laser diode chip on carrier with ribbon lead.
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b457S25
NDL5600D
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PD6300C
Abstract: uPD6300 uPD6300c
Text: N E C E L E C T R O NI C S I NC 72 DE|b4575SS OOCHOñ? 4 T-52-13-09 MOS DIGITAL INTEGRATED CIR CU IT ¿¿PD6 3 0 0 C LATCH and DRIVER for FIP CM OS LSI DESCRIPTION The /1PD6300C is a latch and driver CMOS 1C for F IP Fluorescent Indicator Panel . For multiplex wiring, the
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b4575SS
T-52-13-09
uPD6300C
PD6300C
/JPD7001C
ju-COM75
uPD6300
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of all 74 ic series
Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
Text: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S
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Q0QES43
NEL080120-28
NEL080220-28
NEL080525-28
NEL0801
NEL0802
NEL0805:
NEL0800
to1000
bMS74m
of all 74 ic series
2SC3140
2SC3139
NEL080525-28
J279
J430
j6925
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PH302B
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 3QE D b457S2S 0D2TbG3 ñ r PHOTO D IO D E c P H 302B P L A ST IC M OLDED PIN PHOTO DIO DE D E S C R IP T IO N P A C K A G E D IM E N S IO N S P H 3 0 2 B is a photo diode with P IN structure. It has a wide U n it: m m photo-receiving area and high speed response enabling applica
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b457S2S
PH302B
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Untitled
Abstract: No abstract text available
Text: •I b457S2S 0aMfl^74 3bt. ■ NECE NEC 16M DRAMs cont SPEED PART NUMBER S O J (400-mil) 60 ns 70 ns 80 ns ¡J.PD4216165LE -6 0 -7 0 -8 0 TSOP(400-mil) 60 ns 70 ns 80 ns |iPD4216165G5 -6 0 -7 0 -8 0 S O J (400-mil) 60 ns 70 ns 80 ns HPD4218165LE -6 0 -7 0
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b457S2S
400-mil)
uPD4216165LE-60
uPD4216165LE-70
uPD4216165LE-80
iPD4216165G5
HPD4218165LE
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Untitled
Abstract: No abstract text available
Text: 3GE D • N E C T-^l'07 b4575SS DOSIHS? 4 ■ — ■ ' ' “ ELECTRONICS INC ' LASER DIO DE _J NDL5081 1 3 1 0 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aA sP D O U B LE H E T E R O ST R U C T U R E LA SE R D IO D E DESCRIPTIO N NDL5081 Is a 1310 nm laser diode especially designed for optical data communications. The DC-PBH Double Channel Planar
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b4575SS
NDL5081
NDL5081
NDL5081,
NDL5080
NDL5081.
b42755S
b457525
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC bSE D m b457525 0D3ÛGS1 755 H N E C E DATA SHEET LASER DIODE MODULE N EC ELECTRON DEVICE NDL5803P, NDL5803PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTION PACKAGE DIMENSIONS
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b457525
NDL5803P,
NDL5803PA
NDL5803P
NDL5803PA
b427S25
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Untitled
Abstract: No abstract text available
Text: 3QE D • b457SaS OOETHMB 4 ■ N E C ELECTRONICS INC T'Hl-07 LASER DIODE J N D L5009D 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aA sP D C -P B H LA SER D IO D E DESCRIPTIO N NDL60Q9D is a1310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH
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b457SaS
Hl-07
L5009D
NDL60Q9D
a1310
NDL5009D,
NDL5009D1.
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1SS14
Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
Text: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS
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fci427414
ND4000
ND41S1
ND4151
ND4132
1SS14
1SS156
1SS12
ND4131-5T
ND4141
CP 022 ND
743e
1SS15
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NDL5312P
Abstract: Double Heterostructure led
Text: b4575S5 0D2ci4SS 4 3GE D N E C LIGHT EMITTING DIODE ELECTRONICS INC NDL5312P 1 300 nm O PT IC A L F IB E R C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DU LE D E S C R IP T IO N NDL5312P is a 1300 nm InGaAsP double heterostructure LE D module with fiber pigtail. It can achieve high speed response
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b427525
NDL5312P
NDL5312P
L457S5S
Double Heterostructure led
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NDL5081
Abstract: NDL5080 1310 nm laser diode
Text: 3QE D • _J b4575SS DOSIHS? 4 ■ ' “ T -^\-07 “ N E C ELECTRONICS INC ' “ LASER DIODE NDL5081 1 3 1 0 nm O P T IC A L F IB E R C O M M U N IC A T IO N S InG aA sP D O U B LE H E T E R O S T R U C T U R E L A SE R D IO D E D E S C R IP T IO N NDL5081 Is a 1310 nm laser diode especially designed for optical data communications. The DC-PBH Double Channel Planar
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b1575B5
T-tfj-07
NDL5081
310nm
NDL5081
NDL5081,
NDL5080
NDL5081.
b4275as
1310 nm laser diode
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varactor ghz
Abstract: GaAs varactor diode gaas varactor diodes ND3140-5M ND3140-5N ND3140-5S power varactor varactor diode high frequency GHz
Text: LT SE C N E C / CALIFORNIA 1SE b457414 D MM WAVE GaAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES T + 7 -/I GOOnOÔ T • LOW CONVERSION LOSS: Lo = 5 dB TYP at f = 10 GHz to 20 GHz ND3140-5S ND3140-5M ND3140-5N Units In mm OUTLINE 5S • HIG H CUTOFF FREQUENCY: fo = 240 GHz TYP
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b457414
ND3140-5S
ND3140-5M
ND3140-5N
b427M14
ND3140-5S,
3140-5M,
varactor ghz
GaAs varactor diode
gaas varactor diodes
ND3140-5N
power varactor
varactor diode high frequency GHz
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d1709ct
Abstract: No abstract text available
Text: NE C ELECTRONICS INC 72 D e J b457S2S •DDDhflD2 T I ^ JZ 7 7 -O S'^O^ /7P D I 7 0 9 C T - T 1 4 _ PLL/CONTROLLERFORTV-CATV The ¿ IP D 1709C T -114 is a P L L /co n tro ller w ith the O N S C R E E N D IS P L A Y , SKIP M E M O R Y , SLEEP T IM E R ,
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1709C
b457S2S
juPD6104C
12-hour
ch/134
d1709ct
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