4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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2SK786
Abstract: fsjc EER 35 kd
Text: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss
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T-39-13
GoiflT34
2SK786
-55to
51DTH
fsjc
EER 35 kd
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Untitled
Abstract: No abstract text available
Text: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.
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b427525
b427S5S
PH106
T-41-61
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UPD41258G10
Abstract: UPD41254 upd41256l
Text: NEC N E C ELECTRONICS INC 72C D • b427525 DDObMMl 3 ■ SURFACE MOUNT DEVICES Introduction M em ory Surface mount technology SMT is an idea whose time has come. NEC anticipated the current trend and now offers an exceptionally broad choice of com ponents in suface mount packages. Four factors
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b427525
uPD41254L-12
uPD41254L-15
uPD41256L-12
uPD41256L-15
uPD41257L-12
uPD41257L--15
uPD41258G-10
uPD41258G-12
uPD41258G-15
UPD41258G10
UPD41254
upd41256l
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dt5 tuner module
Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Text: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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uPD78023
uPD78024
uPD78P024
IEU-1373A
IEU-842A)
b427525
devices-9800
SxxxxFE9000
/iSxxxxFT9080
FI78K0
dt5 tuner module
op102
ITT Semiconductors
D78P0
D0122
ddt237
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4070N
Abstract: No abstract text available
Text: b2E D • b427525 0G37bb4 TÔT « N E C E N E C PHOTO DIODE ELECTRONICS INC / N D L5406C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS 2 7 0 X 3 3 0 jum InGaAs PIN PHOTO DIODE D E S C R IP TIO N N D L 5 4 0 6 C is a 270 nm x 3 3 0 /¿m InGaAs PIN p h o to diode fo r a lig h t detector. It covers th e wavelength range between
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b427525
0G37bb4
L5406C
4070N
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PS2501-3
Abstract: PS2505-3
Text: N E C ELECTRONICS INC 3QE » • b427525 0025271 0 ■ SE OPTOELECTRONIC DEVICES T -*H - * 3 O ptoisolators Can Type Absolute Maximum Ratings (Ta = 25°C Part Number PS1001 Features 5 pin, Hermetic CAN BV(Vr.m.s .) If (mA) lC (mA) 1 k (DC) 60 50 Electrical Characteristics (Ta = 25-C)
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b427525
PS1001
PS2501-1
PS2501L-1
PS2501-2
PS2501L-2
PS2501-3
PS2501L-3
PS2501-4
PS2501L-4
PS2505-3
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Untitled
Abstract: No abstract text available
Text: 30E D • b427525 002^252 S / N EC LASER DIODE ELECTRONICS INC NDL5050A 1 550 nm O P TIC A L FIBER COM M UNICATIONS InGaAsP DOUBLE HETERO STR U C TU R E LA SER DIODE DESCRIPTION NDL5050A is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DC*
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b427525
NDL5050A
NDL5050A
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC NEC NEC Electronics Inc. 3GE D • b427525 005S3Tt T ■ //PD75328/P328 4-Bit, Single-Chip Microcomputers with LCD Controller/Driver and A / D Converter M Description T h e ^ P D 7 5 3 2 8 and//PD75P328 are high-perform ance, sin g le -ch ip C M O S m icrocom puters that contain a
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b427525
005S3Tt
uPD75328
uPD75P328
75P328)
P60-P63
P80-P83
S12-S23
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PS2506-2
Abstract: No abstract text available
Text: E C EL EC TRO NICS INC 30E D • b427525 OGETtilQ 7 ■ ^ - T-41-83 PHOTO COUPLERS PS2506-lPS2506-2,PS2506-3lPS2506-4 M U LTI PHOTO CO UPLER HIGH ISOLATION VOLTAGE AC INPUT,DARLINGTON TRANSISTO R TYPE
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b427525
T-41-83
PS2506-lPS2506-2
PS2506-3l
PS2506-4
PS2506-1,
457S25
PS2506-2,
PS2506-3,
PS2506-2
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FIP11B13
Abstract: FIP6A13 FIP11B b427525 FIP13Y8 FIP8B11
Text: b427525 DDHflin 73b « N E C E Table 4 For ECR and Others Type No No. of Digits S!MMI^SSiiâB8àiSâSs!Siiâ$jiii»fi6ieÄMliSSi' Digits x lines S*. !»•».» „ *“ Fig. No. C.H c .w (mm) (mm) P.H (mm) P.L (mm) P.T (mm) L.P (mm) L.L (mm) I FIP6A13C
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b427525
FIP6A13C
FIP8B11C
FIP9G13A
FIP11B13B
FIP13Y8A
b427525
FIP11B13
FIP6A13
FIP11B
FIP13Y8
FIP8B11
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N
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b42752S
NDL5104P,
NDL5104P1
L5104
NDL5104P1
NDL51M
b427S25
NDL5100
NDL5100C
NDL5100P
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TO18 package LED 1300 nm
Abstract: No abstract text available
Text: N E C b5E D ELECTRONICS INC • b427525 G03Ö150 777 » N E C E DATA SHEET NEC LIGHT EMITTING DIODE N D L5302L1 ELECTRON DEVICE 1 300 nm OPTICAL FIB ER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE DESCRIPTION NDL5302L1 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi
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b427525
L5302L1
NDL5302L1
GI-50/125
NDL5302L2
DL5300
DL5302
L5302L1
DL5300P
L5302P
TO18 package LED 1300 nm
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Untitled
Abstract: No abstract text available
Text: b2E » • N E C b427525 D037b4ci b72 W N E C E PHOTO DIODE ELECTRONICS INC / NDL5200 OPTICAL FIBER C O M M U N IC A TIO N S Ge PHOTO DIODE DESC R IPT IO N N D L 5 2 0 0 Germ anium Photo diode is designed for a detector o f long wavelength fiber transm ission systems.
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b427525
D037b4c
NDL5200
b427SES
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JY diode
Abstract: NDL5009
Text: 3GE D • b427525 ‘0051240 1 ■ N E C ELECTRONICS INC T~ - ^ - 0 7 LASER DIODE J NDL5009 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E S C R IP T IO N ND L.5009 is a long wavelength laser diode especially designed fo r longdistance high capacity transmission systems. The
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Lj427525
NDL5009
NDL5009
1310nm
h427S2S
00ET24E
JY diode
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SE304
Abstract: No abstract text available
Text: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S
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bM5755S
SE304
SE304
Ta-25
bH2752S
T-41-11
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PC1212C
Abstract: UPC1212C NEC 212C C1212C RF360 CFZ-455C 2SA119 212C HPC1212C 1S2207
Text: N E C 6 4 275 25 N E C ELECTRONICS INC □SE D I b427555 □□E2b?fl 4 E L EC TR ON ICS INC 05E 22678 D BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 1 2 1 2 C T - 7 V - 0 5 -0 1 AUDIO POWER AMPLIFIER DESCRIPTION The ¿iPC1212C is a silicon m onolithic integrated circuit designed fo r an audio power am plifier used in a portable radio receiver
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b427555
uPC1212C
/iPC1212C
PC1212C
NEC 212C
C1212C
RF360
CFZ-455C
2SA119
212C
HPC1212C
1S2207
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PS5003LC
Abstract: photo interrupter module Photo diode circuit diagram
Text: N E C ELECTRONICS INC 3GE D • b427555 ODETÔlb 3 ■ -f-4-1-"73 PHOTO JN TER R U PTER _ P S 5003L C PHOTO 1C INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS Unit : mm The PS5003LC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit
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PS5Q03LC
PS5003LC
280fi
photo interrupter module
Photo diode circuit diagram
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A-2203
Abstract: A2203 JHPB100474A JJPB100474A PPB100474A
Text: N E C blE J> • ELECTRONICS INC b42755S DD3S371 5^1 « N E C E l^ T M i Y ' r iM Z i W NEC Electronics Inc. PPB100474A 1,024 X 4-Bit 100K ECL RAM - 3 Description Pin Configurations The ¿tPB100474A is a very high-speed 100K interface ECL RAM organized as 1,024 words by 4 bits and
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b42755S
DD3S371
uPB100474A
tPB100474A
24-pin
24-Pln
QQ35374
PPB100474A
b427525
A-2203
A2203
JHPB100474A
JJPB100474A
PPB100474A
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ltls e3
Abstract: uPD42601 WD33C93 NEC disk controller ltls PD42601
Text: N E C ELECTRONICS SEC INC 3ÛE » b427525 In the field of computer-aided design and manufactur ing CAD/CAM , running software with many utility programs results in time-consuming disk accesses. W orkstations operating in a local area network (LAN) also are performance-limited by the heavy burden on
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b427525
/PD42601
the/uPD42601
PD42601
theWD33C93
juPD43256A
ltls e3
uPD42601
WD33C93
NEC disk controller
ltls
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2SK787
Abstract: ld4a0 TI42
Text: 6427525 N E C De | E L E C T R O N IC S 98D IN C 18938 b427555 0010^35 b P R E L IM IN A R Y S P E C IF IC A T IO N MOS FIELD EFFECT POWER ELECTRON DEVICE N-CHANNEL TRANSISTOR 2SK787 FAST SWITCHING S I L I C O N POWER MOS FET FEATURES «Suitable fo r switching power supplies,
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bM27S5S
lfl13fl
2SK787
2SK787
ld4a0
TI42
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nec A2C
Abstract: A50A CERAMIC FLATPACK 20pin
Text: N E C ELECTRONICS I NC L.1E D • b42752S G03S3E4 77S B N E C E P P B 10480 L U IjV * NEC Electronics Inc. 16,384 X 1-Bit 10K ECL RAM T - Description Pin Configurations The ¿/PB10480 is a very high-speed 10K interface ECL RAM organized as 16,384 words by 1 bit and designed
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b42752S
G03S3E4
uPB10480
300-mil,
20-pin
384-word
b427525
3S32fl
nec A2C
A50A
CERAMIC FLATPACK 20pin
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FIP40X2CD
Abstract: FIP40X2BC FIP40X1HC FIP20X FIP20X4AB FIP-7 20x4 40x2
Text: • b427525 0 0 4 8 ^ 3 21Ô * N E C E s t i t ie 8s i i 11 is i m i s FIP20XM2AB 20x2 FIP20XM2GA 20x2 i ì à i i t à i i t s i . àtà à t à ij FIP20XM2FA 20x2 FIP20X4AB 20x4 FIP20X4CB 20x4 FIP26XM1DA 26x1 FIP40X1HC 40x1 FIP40X2BC 40x2 FIP40X2CD 40x2
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b42752S
FIP20XM2AB
H133S13
33333S33
J3333339
FIP20XM2GA
32DOT
FIP40X2CD
FIP40X2BC
FIP40X1HC
FIP20X
FIP20X4AB
FIP-7
20x4
40x2
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simm 72pin
Abstract: D0343
Text: NEC N E C ELECTRONICS INC hlE D • NEC Electronics Inc. b427525 DD34347 3fl5 « N E C E MC-422000AA40 2,097,152 X 40-Bit Dynamic CMOS RAM Module T -Y 4 Description Pin Configuration The M C-422000AA40 is a fa s t-p a g e dynamic RAM mod ule organized as 2,097,152 words by 40 bits an d de
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b427525
DD34347
MC-422000AA40
40-Bit
acc2000AA40
MC-422000AA40
b427S25
D0343bD
simm 72pin
D0343
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