B4 SOT Search Results

B4 SOT Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

B4 SOT Price and Stock

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Nexperia PHDMI2CB4Z ESD Protection Diodes / TVS Diodes DIODE-ESD SOT1176/XSON10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PHDMI2CB4Z	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia PHDMI2BB4Z ESD Protection Diodes / TVS Diodes DIODE-ESD SOT1176/XSON10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PHDMI2BB4Z	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia PUSB3BB4Z ESD Protection Diodes / TVS Diodes DIODE-ESD SOT1176/XSON10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PUSB3BB4Z	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia PHDMI2AB4Z ESD Protection Diodes / TVS Diodes PHDMI2AB4/SOT1176/XSON10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PHDMI2AB4Z	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.125	Buy Now
Nexperia PUSB3AB4Z ESD Protection Diodes / TVS Diodes PUSB3AB4/SOT1176/XSON10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	PUSB3AB4Z	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.096	Buy Now

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B4 SOT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
diode B4 Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1 Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B	Original	O-263 O-247 O-268 STO-227 O-220 20N60 35N60 20N120 20N120 diode B4 ixdn75n120 STO-227 IGBT D-Series IXDH20N120AU1 20N60B 30N120 55N120 30N120D1	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors EMB4 General purpose transistors dual digital transistors SOT-563 FEATURES z Two DTA114T chips in a package 1 Marking: B4 (3) Equivalent circuit (2) (1) R1 R1 (4)	Original	OT-563 OT-563 DTA114T -10mA, 100MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMB4N dual digital transistors PNP+PNP SOT-363 FEATURES Two DTA144T chips in a package. 1 1 Marking: B4 (3) (2) (1) R1 Equivalent circuit R1 (4) (5) (6) Absolute maximum ratings (Ta=25℃)	Original	OT-363 OT-363 DTA144T -10mA, 100MHz	PDF
Untitled Abstract: No abstract text available Text: PJ SR7 0 T B4 Very Low Capacitance Diode Array This diode array is configured to protect up to two high speed data transmission lines, used in Low Voltage Differential Signal LVDS ports. Acting as a line terminator, minimizes overshoot and undershoot conditions	Original	OT543 OT143. OT543 OT-543	PDF
sot669 package Abstract: POWERSO-8 MO-235 Text: Package outline Plastic single-ended surface-mounted package LFPAK; Power-SO8 ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions)	Original	OT669 OT669 MO-235 sot669 package POWERSO-8	PDF
Untitled Abstract: No abstract text available Text: Package outline Plastic single-ended surface-mounted package LFPAK56; Power-SO8 ; 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b X c A 1/2 e A (A3) A1 C q L detail X y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions)	Original	LFPAK56; OT669 MO-235 sot669	PDF
Untitled Abstract: No abstract text available Text: FFB2907A / FMB2907A / MMPQ2907A FMB2907A FFB2907A E2 C2 B2 E1 C1 SC70-6 Mark: .2F MMPQ2907A C1 pin #1 E1 B1 E1 C2 pin #1 B1 E2 B2 E3 E4 B4 B2 SuperSOTä-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can	Original	FFB2907A FMB2907A MMPQ2907A FFB2907A FMB2907A SC70-6 SOIC-16 -10mA	PDF
CBVK741B019 Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16 Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*	Original	MMPQ2907 SOIC-16 CBVK741B019 F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16	PDF
Untitled Abstract: No abstract text available Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*	Original	MMPQ2907 SOIC-16	PDF
Untitled Abstract: No abstract text available Text: PDF: 2000 Sep 28 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 16 terminations e1 L1 4x L (12×) e1 b (12×) 1 2 Z6 (12×) L3 (4×) Z4 (12×) Z (2×) 3 Z5 (4×) 4 L2 16 b4 (4×) (4×) 15 5 e2 e b2 (2×) SOT559A Z1 (2×)	Original	OT559A	PDF
MMPQ2907 Abstract: SOIC-16 Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*	Original	MMPQ2907 SOIC-16 MMPQ2907 SOIC-16	PDF
FFB3904 Abstract: 1N916 CBVK741B019 F63TNR FMB3904 MMPQ3904 SC70-6 SOIC-16 Text: E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.	Original	MMPQ3904 SC70-6 SOIC-16 FFB3904 FMB3904 FMB3904 FFB3904 1N916 CBVK741B019 F63TNR MMPQ3904 SC70-6 SOIC-16	PDF
SM-8 Package Abstract: e4 sot223 NPN/PNP transistor sot223 ZHB6718 ZHB6718 TYPICAL APPLICATION ZHB6790 ZHB6792 Text: H-Bridge devices in SM-8 Package 4 3 6 B2 2 B4 B1 E2,E3 1 C3,C4 7 E1,E4 8 C1,C2 5 The SM-8, is an 8 lead version of the industry standard SOT223 package. The package and leads occupy an area of 6.7 x 7.3mm and with a maximum height of 1.7mm it is ideal for space critical applications.	Original	OT223 ZHB6792 ZHB6790 ZHB6718 SM-8 Package e4 sot223 NPN/PNP transistor sot223 ZHB6718 ZHB6718 TYPICAL APPLICATION ZHB6790 ZHB6792	PDF
SOT669 Abstract: MO-235 sot669 package Text: Package outline Philips Semiconductors Plastic single-ended surface mounted package LFPAK ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 2.5 5 mm scale DIMENSIONS (mm are the original dimensions)	Original	OT669 MO-235 SOT669 MO-235 sot669 package	PDF

IC 7403 Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch	Original	MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A	PDF
F63TNR Abstract: FFB2907A FMB2907A MMPQ2907A SC70-6 SOIC-16 TE ssot-6 Text: E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2F B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SuperSOT-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the	Original	MMPQ2907A SC70-6 SOIC-16 FFB2907A FMB2907A FMB2907A FFB2907A F63TNR MMPQ2907A SC70-6 SOIC-16 TE ssot-6	PDF
Untitled Abstract: No abstract text available Text: BSV52 SOT23 IMPIM SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS: BSV52 - B2 BSV52R - B4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage v CBO o m O < V CES CO LU o >	OCR Scan	BSV52 BSV52 BSV52R 100MHz DS201	PDF
SL 100 NPN Transistor base emitter collector Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl □□ETl'lb b4ä H A P X _ Product specification Philips Semiconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATUR ES • Emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLV99/SL OT172D UB8012 OT172D 7Z94G85 SL 100 NPN Transistor base emitter collector	PDF
Untitled Abstract: No abstract text available Text: HEF4085B DUAL 2-WIDE 2-INPUT AND-OR-INVERT BATE T h e H E F 4 0 8 5 B is a dual 2-w id e 2 -in p u t A N D -O R -in v e rt gate, each w ith an ad ditional in p u t (A 4 or B4 w h ich can be used as e ith e r an expander in p u t o r an in h ib it in put. A H IG H o r A 4 o r B4 forces the	OCR Scan	HEF4085B HEF4085B 14-lead T27-1)	PDF
HEF4085BD Abstract: HEF4085B HEF4085BP HEF4085BT HEF4085 Text: HEF4085B gates DUAL 2-WIDE 2-INPUT AND-OR-INVERT GATE T h e H E F 4 0 8 5 B is a dual 2 -w id e 2 -in p u t A N D -O R -in v e rt gate, each w ith an additional in p u t A 4 o r B4 w hich can be used as e ith e r an expander in p u t o r an in h ib it in p u t. A H IG H on A 4 o r B4 forces the	OCR Scan	HEF4085B HEF4085BP 14-lead OT27-1) HEF4085BD HEF4085BT HEF4085	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification b b s a ^ a i 00317 b4 1T3 • APX, NPN high frequency high voltage m BFQ265; BFQ265A transistor * N AMER PHILIPS/DISCRETE blE D " FEATURES PINNING PIN DESCRIPTION • High breakdown voltages • Low output capacitance	OCR Scan	BFQ265; BFQ265A OT128B OT128B.	PDF
Teledyne F-13 Abstract: NRF 211 teledyne U series Text: TELEDYNE COMPONENTS 2ÖE D H öT17tiDS Q O Ü b4 G3 3 JÊÊ S D 1 1 0 0 , S D Ì 101 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION SDtlOOCHP — SD1100DD SD1100HD 450V, 35 ohm Sorted Chips In Conductive Waffle Pack	OCR Scan	T17tiDS TQ-226AA O-206AA O-20SAF SD1100DD SD1100HD SD1101CHP SD1101DD SD1101HD VP0540 Teledyne F-13 NRF 211 teledyne U series	PDF
BT 812 Abstract: 6265a TRANSISTOR S 813 BFQ265 BFQ265A Text: Philips Semiconductors bt.sa'iai □□3i?b4 iT3 NPN high frequency high voltage transistor IAPX m * Product specification BFQ265; BFQ265A N AMER P H I L I P S / D I S C R E T E FEATURES b lE D “ PINNING PIN DESCRIPTION • High breakdown voltages • Low output capacitance	OCR Scan	BFQ265; BFQ265A OT128B BFQ265A BT 812 6265a TRANSISTOR S 813 BFQ265	PDF
BSV52 Abstract: BSV52R HIGH SPEED SWITCHING NPN SOT23 DS201 Text: SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR BSV52 P AR TM AR KIN G DETAILS: B SV52 - B2 B SV 52R - B4 ABSOLUTE M A X IM U M RATINGS PARAMETER VALUE UNIT V CBO 20 V V CES 20 V 12 V SYM BO L C ollector-B ase V oltag e C olle cto r-E m itte r V oltag e	OCR Scan	BSV52 BSV52R BSV52 100MHz DS201 HIGH SPEED SWITCHING NPN SOT23	PDF

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B4 SOT Search Results

B4 SOT Result Highlights (5)

B4 SOT Price and Stock

Nexperia PHDMI2CB4Z

Nexperia PHDMI2BB4Z

Nexperia PUSB3BB4Z

Nexperia PHDMI2AB4Z

Nexperia PUSB3AB4Z

B4 SOT Datasheets Context Search

diode B4

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sot669 package

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CBVK741B019

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MMPQ2907

FFB3904

SM-8 Package

SOT669

IC 7403

F63TNR

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SL 100 NPN Transistor base emitter collector

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HEF4085BD

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Teledyne F-13

BT 812

BSV52