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    B36 DIODE Search Results

    B36 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    B36 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE B36

    Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRS360T3 10IPK/IO DIODE B36 part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode

    DIODE B36

    Abstract: part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRS360T3 MBRS360T3/D DIODE B36 part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C361CB3D132214DDD" 2313BCBC36134#6233236B4"3


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    PDF DZ3600S17K3 2313BCBC 223DB 86B56 1231423567896A42BCD6EF 54B36 3567896A42BCD6

    DIODE B36

    Abstract: SMAB36 Schottky Diode B36
    Text: SEMICONDUCTOR SMAB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency.


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    PDF SMAB36 60MHz DIODE B36 SMAB36 Schottky Diode B36

    DIODE B36

    Abstract: marking B36 SMAB36 Schottky Diode B36
    Text: SEMICONDUCTOR SMAB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications.


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    PDF SMAB36 DIODE B36 marking B36 SMAB36 Schottky Diode B36

    DIODE B36

    Abstract: SMBB36
    Text: SEMICONDUCTOR SMBB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.


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    PDF SMBB36 DIODE B36 SMBB36

    A36 SOT

    Abstract: No abstract text available
    Text: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers


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    PDF OPA336 OPA2336 OPA4336 SBOS068C A36 SOT

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR SMBB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.


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    PDF SMBB36

    DIODE B36

    Abstract: No abstract text available
    Text: SEMICONDUCTOR SMCB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.


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    PDF SMCB36 DIODE B36

    Untitled

    Abstract: No abstract text available
    Text: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers


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    PDF OPA336 OPA2336 OPA4336 SBOS068C OPA336

    Untitled

    Abstract: No abstract text available
    Text: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers


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    PDF OPA336 OPA2336 OPA4336 SBOS068C OPA336

    DIODE B36

    Abstract: SMCb36
    Text: SEMICONDUCTOR SMCB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.


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    PDF SMCB36 DIODE B36 SMCb36

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR SMCB36 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES ・Low Profile Surface Mount Package. B C ・Low Power Loss, High Efficiency. ・For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.


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    PDF SMCB36

    B333G

    Abstract: No abstract text available
    Text: Z1 SMA 1 . Z1 SMA 100 1W 7 @ + 5   <   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes    <    5 70 @ +  &% A   '  ;  <    5 C0        D   C7        D 


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    smd 5b1

    Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
    Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)


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    PDF MM3ZB39 OD-323 OD-323 smd 5b1 smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode

    marking B32 diode SCHOTTKY

    Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x

    Untitled

    Abstract: No abstract text available
    Text: Z1 SMA 1 . Z1 SMA 100 1W 7 @ + 5   <   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes    <    5 70 @ +  &% A   '  ;  <    5 C0        D   C7        D 


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    zener diode b27

    Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
    Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)


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    PDF MM3ZB39 OD-323 OD-323 zener diode b27 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey

    diode zener

    Abstract: No abstract text available
    Text: Z1 SMA 1 . Z1 SMA 100 1W 7 @ + 5   <   Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes    <    5 70 @ +  &% A   '  ;  <    5 C0        D   C7        D 


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    J553

    Abstract: j556
    Text: L INTER F E T CORP 5bE D • 4S2bflS0 0 0 0 0 2 2 0 b ■ r -m/ r - z n B36 J553, J554, ]555, J556, 557 N-CH AN NEL SILICON CURRENT REGULATOR DIODES • CURRENT REGULATION • CURRENT LIMITING • BIASING absolute maximum ratings at 25°C free-air temperature


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    PDF O-226AA SMP-J553 SMP-J554, SMP-J555, SMP-J556, J553 j556

    Diode CK 66A

    Abstract: No abstract text available
    Text: International ioR Rectifier 4055452 b36 « I N R P D ‘ 9-595A IRFP448 HEXFET P o w e r M O S F E T • • • • • • 0015532 IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching


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    PDF IRFP448 Diode CK 66A

    DIODE B36

    Abstract: marking B34 diode SCHOTTKY diode marking b34 DIODE MOTOROLA B34 marking b34 b34 DIODE schottky motorola package marking diodes b34 diode schottky B34 DIODE B34 b34 marking
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS340T3 M BRS360T3 S u rfa c e M ount S c h o ttk y Pow er R ectifier Motorola Preferred Device . . . employing the Schottky Barrier principle in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


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    PDF MBRS340T3, MBRS360T3 DIODE B36 marking B34 diode SCHOTTKY diode marking b34 DIODE MOTOROLA B34 marking b34 b34 DIODE schottky motorola package marking diodes b34 diode schottky B34 DIODE B34 b34 marking

    marking B34 diode SCHOTTKY

    Abstract: b34 DIODE schottky diode schottky B34 DIODE MOTOROLA B34 DIODE B36 Schottky Diode B36 marking b34 DIODE B34 B36 schottky diode B34 schottky diode
    Text: MOTOROLA SEMICONDUCTOR — — — TECHNICAL DATA MBRS340T3 MBRS360T3 S u rfa c e M o u n t S c h o tt k y P o w e r R e ctifie r Motorola Preferred Device . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and. metal


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    PDF

    marking B34 diode SCHOTTKY

    Abstract: DIODE MOTOROLA B34 Schottky Diode 437 B34 b34 DIODE schottky diode schottky B34 motorola B34 diode SCHOTTKY MOTOROLA B34 diode BRS340T3 DIODE MOTOROLA B36 motorola package marking diodes b34
    Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier M BRS340T3 M BRS360T3 . , . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features epitaxial construction with


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    PDF MBRS340T3/D b3b75SS BRS340T3 BRS360T3 marking B34 diode SCHOTTKY DIODE MOTOROLA B34 Schottky Diode 437 B34 b34 DIODE schottky diode schottky B34 motorola B34 diode SCHOTTKY MOTOROLA B34 diode DIODE MOTOROLA B36 motorola package marking diodes b34