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    TDK Corporation C1608JB1A105M080AC

    CAP CER 1UF 10V JB 0603
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    TDK Corporation C0603JB1A103M030BA

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    Vishay Sprague TMCMB1A107MTRF

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    Panasonic Electronic Components EEE-HB1A101P

    CAP ALUM 100UF 20% 10V SMD
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    Nichicon Corporation UUB1A101MCL1GS

    CAP ALUM 100UF 20% 10V SMD
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    B1A10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    B1A-10PK Chicago Miniature Lamp Lamps - Incandescents, Neons, Optoelectronics, LAMP INDICATOR T-3 1/4 120V 10PK Original PDF

    B1A10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b1a12

    Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
    Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit


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    PC133/100 M390S2950MTU M390S2950MTU 128Mx72 128Mx4, 128Mx4 400mil 18bits b1a12 M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design PDF

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


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    PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L PDF

    b1a12

    Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
    Text: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004


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    256MB, 512MB, 168pin 256Mb 72-bit K4S510632E b1a12 PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A PDF

    CDC2509

    Abstract: Kingmax 256mb Kingmax Semiconductor MPIB63S-68KX3 PC133 registered reference design
    Text: MPIB63S-68KX3 PC-133 256MB 168pin Registered SDRAM DIMM DESCRIPTION The MPIB63S-68KX3 is 32M bit x 72 Synchronous Dynamic RAM high density memory module. The MPIB63S-68KX3 consists of eighteen CMOS 16M x 8 bit with 4 banks Synchronous DRAMs in TinyBGA package, three 18-bits Drive


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    MPIB63S-68KX3 PC-133 256MB 168pin MPIB63S-68KX3 18-bits 24-pin 168-pin CDC2509 Kingmax 256mb Kingmax Semiconductor PC133 registered reference design PDF

    MA2180

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


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    KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)


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    KMM377S6450AT2 KMM377S6450AT2 64Mx72 64Mx4, 64Mx4 400mil 18-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S6428T3 PC100 Registered DIMM KMM377S6428T3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD


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    KMM377S6428T3 PC100 KMM377S6428T3 64Mx72 64Mx4, 64Mx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


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    KMM377S2858AT3 KMM377S2858AT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: M390S6450CT1 PC133 Registered DIMM M390S6450CT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450CT1 is a 64M bit x 72 Synchronous


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    M390S6450CT1 PC133 M390S6450CT1 64Mx72 64Mx4, 64Mx4 400mil 18-bits PDF

    Untitled

    Abstract: No abstract text available
    Text: M390S2858CT1 PC133 Registered DIMM M390S2858CT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858CT1 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858CT1 consists of eighteen CMOS Stacked


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    M390S2858CT1 PC133 M390S2858CT1 128Mx72 128Mx4, 128Mx4 400mil 18-bits PDF

    CDC2509

    Abstract: KM44S16030BT
    Text: Preliminary KMM378S3227BT SDRAM MODULE KMM378S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM378S3227BT consists of eighteen CMOS Stacked


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    KMM378S3227BT KMM378S3227BT 32Mx72 32Mx4, KMM378S3227BT-G8 KMM378S3227BT-GH KMM378S3227BT-GL KMM378S3227BT-G0 CDC2509 KM44S16030BT PDF

    M377S6428AT3-C1H

    Abstract: M377S6428AT3-C1L
    Text: M377S6428AT3 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S6428AT3 PC100 Registered DIMM M377S6428AT3 SDRAM DIMM (Intel 1.2 ver Base)


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    M377S6428AT3 PC100 M377S6428AT3 64Mx72 64Mx4, 64Mx4 M377S6428AT3-C1H M377S6428AT3-C1L PDF

    KMM377S6450AT3-GL

    Abstract: KMM377S6450AT3-GH
    Text: SDRAM MODULE KMM377S6450AT3 KMM377S6450AT3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT3 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT3 consists of eighteen CMOS 64Mx4


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    KMM377S6450AT3 KMM377S6450AT3 64Mx72 64Mx4, 64Mx4 400mil 18-bits 24-pin KMM377S6450AT3-GL KMM377S6450AT3-GH PDF

    KMM377S6428T3-GH

    Abstract: KMM377S6428T3-GL
    Text: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Revision 0.2 (April 29, 2000) - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice."


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    KMM377S6428T3 PC100 KMM377S6428T3 64Mx72 64Mx4, 64Mx4 KMM377S6428T3-GH KMM377S6428T3-GL PDF

    CDC2509

    Abstract: M377S3323CT0-C1H M377S3323CT0 M377S3323CT0-C1L
    Text: PC100 Registered DIMM M377S3323CT0 M377S3323CT0 SDRAM DIMM Intel 1.2 ver Base 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3323CT0 is a 32M bit x 72 Synchronous


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    PC100 M377S3323CT0 M377S3323CT0 32Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509 M377S3323CT0-C1H M377S3323CT0-C1L PDF

    KMM377S1620CT3-GL

    Abstract: CDC2509
    Text: SDRAM MODULE KMM377S1620CT3 KMM377S1620CT3 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx4, 4Banks, 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S1620CT3 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S1620CT3 consists of eighteen CMOS 16Mx4


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    KMM377S1620CT3 KMM377S1620CT3 16Mx72 16Mx4, 16Mx4 400mil 18-bits 24-pin KMM377S1620CT3-GL CDC2509 PDF

    D1U eeprom

    Abstract: KMM390S6428T-GA KMM390S6428T PC133 registered reference design
    Text: KMM390S6428T Preliminary PC133 SDRAM MODULE Revision History Revision 0 Feb. 1999 • PC133 first published REV. 0 Feb. 1999 Preliminary PC133 SDRAM MODULE KMM390S6428T KMM390S6428T SDRAM DIMM (RCC 0.8ver. Base) 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD


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    KMM390S6428T PC133 KMM390S6428T 64Mx72 64Mx4, D1U eeprom KMM390S6428T-GA PC133 registered reference design PDF

    KMM390S2858AT1-GA

    Abstract: d14l PC133 registered reference design
    Text: KMM390S2858AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions


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    KMM390S2858AT1 PC133 KMM390S2858AT1 128Mx72 128Mx4, KMM390S2858AT1-GA d14l PC133 registered reference design PDF

    PC133 registered reference design

    Abstract: KMM390S6450AT1-GA
    Text: KMM390S6450AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions


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    KMM390S6450AT1 PC133 KMM390S6450AT1 64Mx72 64Mx4, PC133 registered reference design KMM390S6450AT1-GA PDF

    b1a12

    Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
    Text: 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004


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    512MB, 168pin 512Mb 72-bit M390S6553BT1-C7A 512MB b1a12 K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832 PDF

    Untitled

    Abstract: No abstract text available
    Text: M390S6450DT1 PC133 Registered DIMM M390S6450DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DT1 is a 64M bit x 72 Synchronous


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    M390S6450DT1 PC133 M390S6450DT1 64Mx72 64Mx4, 64Mx4 400mil 18-bits PDF

    M390S2858CT1

    Abstract: M390S2858CT1-C7A M390S2858CT1-C7C PC133 registered reference design K4S510632C-TC75 B1A1
    Text: M390S2858CT1 PC133 Registered DIMM M390S2858CT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858CT1 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858CT1 consists of eighteen CMOS Stacked


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    M390S2858CT1 PC133 M390S2858CT1 128Mx72 128Mx4, 128Mx4 400mil 18-bits M390S2858CT1-C7A M390S2858CT1-C7C PC133 registered reference design K4S510632C-TC75 B1A1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM KMM377S2858AT3 Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    KMM377S2858AT3 PC100 118DIA 000DIA 128Mx4 KM44S28238AT PDF

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S2858BT1 PC133 Registered DIMM Revision History Revision 0.0 May. 2000 • PC133 first published REV. 0 May. 2000 M390S2858BT1 PC133 Registered DIMM M390S2858BT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD


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    M390S2858BT1 PC133 M390S2858BT1 128Mx72 128Mx4, PC133 registered reference design PDF