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    Sensata Technologies PTE7100-21DB-0A100BN

    SENSOR 1450.38PSIG 1/4"NPT .02A
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    Altech Corporation TR11-C-X-63-B-0-A-1.0A

    CIRCUIT BREAK TRIP BAND KNURL ME
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    TestEquity LLC TR11-C-X-63-B-0-A-1.0A
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    Carling Technologies 8350-AC2B-MAAS-L0AB0A-100A

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    Master Electronics 8350-AC2B-MAAS-L0AB0A-100A
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    Carling Technologies 8350-AC1B-7ABS-L0AB0A-10A

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    E-T-A 8350-AC2B-MAAS-L0AB0A-100A

    Circuit Breakers
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    B0A10 Datasheets Context Search

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    b1a12

    Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
    Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit


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    PDF PC133/100 M390S2950MTU M390S2950MTU 128Mx72 128Mx4, 128Mx4 400mil 18bits b1a12 M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design

    M390S3320DT1-C7A

    Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range


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    PDF PC133 M390S3320DT1 M390S3320DT1 32Mx72 32Mx4, M390S3320DT1-C7C 24-pin 133MHz M390S3320DT1-C7A M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


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    PDF PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L

    M390S3320DT1

    Abstract: M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF PC133 M390S3320DT1 M390S3320DT1 32Mx72 32Mx4, 32Mx4 400mil 18-bits M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: PC100 Registered DIMM M377S0823FT3 M377S0823FT3 SDRAM DIMM Intel 1.2 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S0823FT3 is a 8M bit x 72 Synchronous


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    PDF PC100 M377S0823FT3 M377S0823FT3 8Mx72 400mil 18-bits 24-pin 168pin

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S0823FT1 PC133 Registered DIMM M390S0823FT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823FT1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


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    PDF M390S0823FT1 PC133 M390S0823FT1 8Mx72 400mil 18-bits 24-pin 168pin PC133 registered reference design

    b1a12

    Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
    Text: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004


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    PDF 256MB, 512MB, 168pin 256Mb 72-bit K4S510632E b1a12 PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A

    CDC2509

    Abstract: Kingmax 256mb Kingmax Semiconductor MPIB63S-68KX3 PC133 registered reference design
    Text: MPIB63S-68KX3 PC-133 256MB 168pin Registered SDRAM DIMM DESCRIPTION The MPIB63S-68KX3 is 32M bit x 72 Synchronous Dynamic RAM high density memory module. The MPIB63S-68KX3 consists of eighteen CMOS 16M x 8 bit with 4 banks Synchronous DRAMs in TinyBGA package, three 18-bits Drive


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    PDF MPIB63S-68KX3 PC-133 256MB 168pin MPIB63S-68KX3 18-bits 24-pin 168-pin CDC2509 Kingmax 256mb Kingmax Semiconductor PC133 registered reference design

    MA2180

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


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    PDF KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)


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    PDF KMM377S6450AT2 KMM377S6450AT2 64Mx72 64Mx4, 64Mx4 400mil 18-bits

    Untitled

    Abstract: No abstract text available
    Text: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S6428T3 PC100 Registered DIMM KMM377S6428T3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD


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    PDF KMM377S6428T3 PC100 KMM377S6428T3 64Mx72 64Mx4, 64Mx4

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


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    PDF KMM377S2858AT3 KMM377S2858AT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S3320BT1 PC133 Registered DIMM Revision History Revision 0.0 Sep. 1999 • PC133 first published REV. 0 Sep. 1999 PC133 Registered DIMM M390S3320BT1 M390S3320BT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


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    PDF M390S3320BT1 PC133 M390S3320BT1 32Mx72 32Mx4, PC133 registered reference design

    PC133 registered reference design

    Abstract: No abstract text available
    Text: PC133 Registered DIMM M390S3320ET1 M390S3320ET1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs FEATURE GENERAL DESCRIPTION The Samsung M390S3320ET1 is a 32M bit x 72 Synchronous •Performance range


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    PDF M390S3320ET1 M390S3320ET1 PC133 32Mx72 32Mx4, 32Mx4 400mil 18-bits PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


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    PDF DS707-00003-1v4-E

    B0411

    Abstract: b0401
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


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    PDF DS707-00002-4v0-E MB9DF126 MB9DF126PMC-GSE2 176-pin FPT-176-M07 MB9DF126BPMC-GSE2 MB9DF126PFFS-ESE2 296-pin B0411 b0401

    SMT160

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 1 MT16D T 164(S), MT16D(T)464 1 MEG, 4 MEG x 64 DRAM MODULES DRAM MODULE 1 MEG, 4 MEG x 64 8, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin,


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    PDF MT16D 168-pin, 600mW 024-cycle 128ms SMT160

    tc 97101

    Abstract: D472
    Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out


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    PDF MT9LD272 MT18LD472 168-pin, 048-cycle T18LCW tc 97101 D472

    MT16C

    Abstract: No abstract text available
    Text: ». ADVANCE M IC R O N I MT16D T 464 4 MEG X 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process • Single +5V ±10% power supply


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    PDF MT16D 168-pin, 200mW 048-cycle MT10O MT16C

    IC 7476 function

    Abstract: No abstract text available
    Text: ADVANCE I^ IIC R O N 4 MEG MT16D T 464 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-perform ance CM O S silicon-gate process


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    PDF MT16D 168-pin, 048-cycle DE-22) DE-23) MT16DIT A0/B0-A10, IC 7476 function

    WT16LD

    Abstract: tc 97101 INTERNAL DIAGRAM OF IC 7476
    Text: PRELIMINARY M IC n a iM 1 M T 16LD T 164(S), M T16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM M OD ULES 1 MEG, 4 MEG x 64 DRAM MODULE 8, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin,


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    PDF T16LD 168-pin, 024-cycle 128ms 048-cycle MT16LD WT16LD tc 97101 INTERNAL DIAGRAM OF IC 7476

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |U |IC R O N 4 MEG X MT24D T 472 72 DRAM MODULE 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-perform ance CM O S silicon-gate process


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    PDF MT24D 168-pin, 048-cycle A0/B0-A10,

    resistor 472g

    Abstract: t18d mt180 MTT80 UT18D
    Text: PRELIMINARY M IC R O N 1 M T18D T 172(S), M T18D(T)472 1 MEG, 4 MEG X 72 DRAM M ODULES DRAM 1 MEG, 4 MEG x 72 R J i n n i l l C 8, 32 MEGABYTE, ECC, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH IVIK J U U L. Cl FEATURES OPTIONS 168-Pin DIMM (DE-13) SOJ version


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    PDF 168-Pin DE-13) DE-14) 168pin, 024-cycle MT18D resistor 472g t18d mt180 MTT80 UT18D

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON 4 MEG DRAM MODULE X MT16LD464(X 64 DRAM MODULE 4 MEG x 64 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (DIMM) • H igh-perform ance CM OS silicon-gate process


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    PDF MT16LD464 168-pin, 880mW 048-cycle 168-pin