SPS140
Abstract: SIPT640 8T68A HIT640 td615 3TB60 IS020 td510 HIS240 T106D
Text: PART NUMBER INDEX .PG. DEVICE 3 S A 3 0 .44 3 S A 4 5 .44 3 S A 7 0 .44 3 S B 3 0 .44 3 S B 4 5 .44 3 S B 7 0 . . . 44
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HI23SD
HI23SG
HI23SH
HI23SS
HI43SD
HI43SG
HI43SH
HI43SS
HI63SD
HI63SG
SPS140
SIPT640
8T68A
HIT640
td615
3TB60
IS020
td510
HIS240
T106D
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dual photodiode
Abstract: VTB6060B Photodiodes 6061 vactec VTB6061B
Text: 5bE T> 3D3DbD^ DOOlOHb 177 H V C T VTB Process Photodiodes V T B 6 0 6 0 B , 6061 B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack age. The package incorporates an in
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VTB6060B,
T-41-51
VTB6060B
VTB6061B
7x1012
x1012
dual photodiode
VTB6060B
Photodiodes 6061 vactec
VTB6061B
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photoe
Abstract: No abstract text available
Text: TO S H I B A -CLOGIC/nEMORY} 9097248 TOSHIBA b? DE | ' ì D ,ì7a4fl 0 0 0 T S T 3 S LOGIC/MEMORY TCD205C CCD AREA IMAGE SENSOR CCD (Charge Coupled Device) 67C 09593. T-41-55 T C D 205C is a 488 x 376-element CCD area image sensor desi g n e d for B/ W TV cameras.
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TCD205C
T-41-55
376-element
88mmx6
8D24A-C)
photoe
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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Untitled
Abstract: No abstract text available
Text: D SbE • B O B O b O ^ D D O l O a O 335 H V C T VTP Process Photodiodes E 6 & G V TP 83 50 , 50S, 51 T-41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 11 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a th ick layer of clea r epoxy.
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T-41-51
VTP8350
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toshiba ccd linear dual shift gate
Abstract: ccd linear toshiba TCD107
Text: T O S H I B A -CLOGIC/MEÎIORY} 90 9 7 2 4 8 T OS H I B A b? DE I ciO‘i7E4fl D 0 I H S 7 3 LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD107C 67 C 0 9 5 7 3 T-41-55 The TCD107C is a high resolution and high sensitivity 1024 element linear image sensor.
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TCD107C
T-41-55
TCD107C
14//mx
14//m
14/un
toshiba ccd linear dual shift gate
ccd linear toshiba
TCD107
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VTB8443B
Abstract: 8444B VTB8444B
Text: SbE D B O B Ü b C H G Ü D I O S H 243 • VCT VTB Process Photodiodes VTB8443B, 8444B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a
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VTB8443B,
8444B
T-41-51
VTB8443B
VTB8444B
9x1012
8x1013
VTB8443B
8444B
VTB8444B
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Untitled
Abstract: No abstract text available
Text: SbE J> B G B D b C H OOOIQ'ÌE OS? H V C T m VTS-1 Process Photodiodes _ VTS 24, E G & G VACTEC_ P R O D U C T D E S C R I P T IO N 26 T-41-51 P A C K A G E D IM E N S IO N S inch mm Large area planar silicon photodiodes primarily intended for use in the
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T-41-51
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VTB9412B
Abstract: VTB9413B VTB9414B
Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in
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3030bDT
0001DS7
VTB9412B,
T-41-51
VTB9412B
VTB9413B
VTB9414B
x1013
VTB9412B
VTB9413B
VTB9414B
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VTB9415B
Abstract: VTB9416B k420 9416B x-1015 K4-20
Text: SbE D BOBGLG'i OÜGlOSfl * W VTB Process Photodiodes HVCT V T B 9 4 1 5 B , 9 4 16B E: 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceram ic package. The packageincorporatesan infrared rejec
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VTB9415B,
9416B
T-41-51
VTB9415B
VTB9416B
7x1013
VTB9415B
VTB9416B
k420
9416B
x-1015
K4-20
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SHARP BS520
Abstract: No abstract text available
Text: SHARP ELEK/ MELEC DIV 15E D I Blue Sensitive Photodiodes BS520/BS521 • flläO?TÖ QQD27GM 3 | B S 5 2 0 /B S 5 2 1 Photodiode fo r Visible Light Unit : mm Outline Dimensions Features BS520 Spectral sensitivity characteristic akin to that of human eye 2. Compact flat package
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QQD27GM
BS520/BS521
BS520
BS521
BS521
T-41-51
520/B
BS521)
SHARP BS520
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hy 9u
Abstract: panasonic linear ccd t3bf
Text: ~7E PANASONIC INDL/ELEK -CIO 6932052 PANASONIC INDLtELECTRONIC “ I>F§fc,T3Bfl5E OOObbflH ö J ~ 72C 06682 '¿ T D T -41-55 MN8061A “ M N8061A 2,592 M -y h Ä Ä • CCD - i j< — iî-b 2,592-Bit High-Speed, H igh-Sensitivity CCD Linear Image Sensor B $1 H
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MN8061A
N8061A
592-Bit
MN8061A
DS002
06pin
15//F·
01//F-
T-41-55
hy 9u
panasonic linear ccd
t3bf
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CM500
Abstract: LZ22291
Text: SHARP ELEK/ MELEC 15E D IV 0 I â l â Q 7 ci a Q| O O Q liS T l LZ22291 B /W CCD Area Sensor T-41-55 B/W CCD Area Sensor • ■ Description LZ22291 is a 2/3 inch solid-state image sensor composed of PN photodiodes and CCDs charge coupled device . With its approximately 290,
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LZ22291
T-41-55
LZ22291
22-pin
105nsec
00151b
CM500
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LZ22251
Abstract: 3 pin IR sensor circuit transister
Text: SHARP ELEK/ MELEC DIV 1 SE 0 I 81807=10 O Q Ü lS a S S I LZ22251 B /W CCD Area Sensor T-41-55 LZ22251 • B/W CCD Area Sensor ■ Description LZ22251 is a 2/3 inch solid-state image sensor composed of PN photodiodes and CCDs chargecoupled device . With its approximately 250,000 pix
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GD015Ã
LZ22251
T-41-55
22-rginnr-innnrjirhr
LZ22251
T-41-55
899eai
9Z00SQ
3 pin IR sensor circuit
transister
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Untitled
Abstract: No abstract text available
Text: 5bE D BDBDbQ^ GGQ1G5M IVCT V T B 8 4 4 3 B , 8 4 4 4B VTB Process Photodiodes E 243 Q 8. G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack age incorporates an infrared rejection
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VTB8443B
TCIs420
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MN8027
Abstract: 2048 x 1 ccd linear array TT30 22-DIC 22DIC panasonic linear ccd
Text: PANASONIC INDL/ELEK -CIO 1^ 1 ^ 3 2 0 5 5 DDDbbbb 0 693 2 8:52 P ANASONIC INDL » ELECTRON IC 7ZÇ 06666 D~ T^41-55 -<^-Î ÏZyV _ MN8027 M N 8027 2,048 b V hCC D V “ T M ^ ^ / 2 , 0 4 8 - B i t S ensor CCD L in e a r Image “ffi'rP SSH H /Pin Assignment
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T-41-55
MN8027
048-Bit
MN8027
400nm-CÂ
2048 x 1 ccd linear array
TT30
22-DIC
22DIC
panasonic linear ccd
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UV diode 365 nm
Abstract: dual photodiode uv led 365 L-487 VTB6060UV VTB6061UV Vactec
Text: SbE ]> Hi 3 D 3 0 b D cl DQD104Ô T^T H V C T VTB Process Photodiodes V T B 6 0 6 0 U V , 61 UV E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is
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T-41-51
VTB6060UV,
VTB6060UV
VTB6061UV
x1013
UV diode 365 nm
dual photodiode
uv led 365
L-487
VTB6060UV
VTB6061UV
Vactec
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photo transistor MEL 11
Abstract: sharp ir sensor H123 LZ2122J LR36682
Text: SHARP E L E K / MELEC LSE o | D IV a ia a ? ^ o o a ib n CCD Area Sensor for 1/2" CCIR B /W LZ2122J • 7 | LZ2122J T -4 1 -5 5 CCD Area Sensor for 1/2MCCIR B/W Pin Connections Description The LZ2122J is a 1/2 inch solid-state image sensor comprised of PN-junction photodiodes, and CCDs
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LZ2122J
T-41-55
l/1000th
l/2000th
071fl
LZ2122J
T-41-55
photo transistor MEL 11
sharp ir sensor
H123
LR36682
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VTB8340
Abstract: VTB8341
Text: _ SbE D • 3 0 3 G b 0 T 0 0 0 1 0 S G bTfl IVCT V T B 8 3 4 0 , 8341 VTB Process Photodiodes Z 6 & 6 VACTE C T-41-51 PACKAGE DIMENSIONS inch mm CASE 11 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.
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0001QSQ
VTB8340,
T-41-51
VTB8340
VTB8341
28Circuit
100fc,
2850K
2x1012
VTB8340
VTB8341
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PD170V1
Abstract: SM 4151 terminal block aar osai
Text: Color Sensor SHARP E L E K / PD170V1 MELEC D I V PD170V1 • 2bE ì> B 0DG43n R. G. B. Color Sensor T BSRPJ r-w-sv O u tlin e D im e n s io n s F e a tu re s 1. 01007=10 U nit : m m C olor sensor with th ree photodiodes, sensi tive to the incident lights of th ree different
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PD170V1
0DG43n
3200K.
106/Color
0GG4321
PD170V1
SM 4151
terminal block aar
osai
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VTP5040
Abstract: VTP5041
Text: _ sbE » • B o a o b t n dgo i g? s t?s iVCT 4 1 IR VTP5040 VTP Process Photodiodes T-41-51 E G & G VACTEC PA CKA G E DIM ENSIONS inch mm PRO D U CT D ESCR IPTIO N Planar silicon photodiode in a 'flat" win dow, dual lead TO-5 package. Cathode is common to the case. VTP5041 IR
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VTP5040
T-41-51
VTP5041
x1012
0x1012
2x1012
VTP5040
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MN8090
Abstract: SM15 CSP-5 mX464 VSS13 5V15V
Text: PANASONIC INDL/ELEK -CIO 693285^2 P A N A S O N I C *75 DETJbiaaflSa D D D t b m 4 | ~ I NDLt E L E C T R O N I C D 72C 0 6 6 9 4 . T-41-55 MN8090 M N8 09 0 1024 t*'y h MOS <1 - 7 -f * - i > - b Self-Scanning 1024-Bit MOS Linear Image Sensors ^ ® M N 8090Ü ,
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T-41-55
mn8090
1024-Bit
MN8090Ã
MN8090
28jum
28//mX464
100ns
SM15
CSP-5
mX464
VSS13
5V15V
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AEPX65
Abstract: AEPX65-R2F 5902 Centronic
Text: CENTRONIC I N C t E -0 DIV 13E D • m saSD GGGGaiS D ■ TECHNICAL CENB " DATA T-41-50 SHEET AEPX65-R2F ULTRA HIGH SPEED PHOTODIODE PACKAGE A l l DIMENSIONS IN mm 4.7 4.65 DIA. CENTRONIC M o d e l AEPX65-R2F h a s b e e n S P E C I F I C A L L Y CREATED FOR THE F I B E R
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T-41-50
AEPX65-R2F
AEPX65-R2F
825nm.
fiSx10
820nm)
829nm)
1829-B
AEPX65
5902
Centronic
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Untitled
Abstract: No abstract text available
Text: Panasonic Chip Inductors Japan Singapore Chip Inductors GE * S e r ie s C h ip Type: III RE, ND, NC, NA, FD, FC, FA, SA, FB, PC, PA, Type RE Size 1608 Type D D (Size 2012) c o y c s a Type D C (Size 2520) Type D A (Size 3225) Type D B (Size 4532) b i t t z t t & L t z i m m } (r e )
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60JilÂ
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