transistor d 1710
Abstract: v5856 circuit 5 lo 265 MD59-0062
Text: Features GND Absolute Maximum Ratings 1 Parameter 6 Volts IF Input Level 0 dBm LO In Power 0 dBm Operating Temperature -55°C to +100°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage. GND
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MD59-0062
MO-220A
MD59-0062
MD59-0062TR
transistor d 1710
v5856
circuit 5 lo 265
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b 595 transistor schematic
Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W
Text: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration
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PH0810-15
1N4245)
b 595 transistor schematic
PH0810-15
IC 8088
Icq-100
Pacific Wireless
1N4245
f100 0725 5
POUT15W
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MD59-0062
Abstract: FQFP-N-20
Text: Features GND MIX OUT GND LO IN 20 GND 1 DRVR IN LOA VDD GND GND DRVR VDD1 GND GND M/A-COM’s MD59-0062 is a fully integrated upconverter / driver IC that includes an IF amplifier, upconverting mixer, two stage driver amplifier and LO buffer in a miniature 4 mm plastic FQFP-N package.
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MD59-0062
MO-220A
AM59-0062
AM59-0062TR
FQFP-N-20
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Crss RF
Abstract: No abstract text available
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 2/18/03 MAPLST2122-060WF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
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MAPLST2122-060WF
28VDC,
-45dB
096MHz)
2110MHz)
Crss RF
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transistor 10mhz 60w
Abstract: 60W POWER AMPLIFIER CIRCUIT MAPLST2122-060CF transistor f1
Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 MAPLST2122-060CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
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MAPLST2122-060CF
28VDC,
-45dB
096MHz)
2110MHz)
transistor 10mhz 60w
60W POWER AMPLIFIER CIRCUIT
MAPLST2122-060CF
transistor f1
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MRF16006
Abstract: No abstract text available
Text: Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz
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MRF16006/D
MRF16006
MRF16006
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ferroxcube 56-590-65
Abstract: ferroxcube ferrite beads transistor 2439 MRF454 FERROXCUBE VK200 vk200 VK200 FERRITE VK200-20/4B vk200-20 1817pF
Text: Order this document by MRF454/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF454 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —
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MRF454/D
MRF454
ferroxcube 56-590-65
ferroxcube ferrite beads
transistor 2439
MRF454
FERROXCUBE VK200
vk200
VK200 FERRITE
VK200-20/4B
vk200-20
1817pF
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MRF428
Abstract: arco 466 ferroxcube ferrite beads 170 680 pF arco 469 1N4997 2204B ferroxcube 56-590-65 arco 469 332 Ic 8 pin
Text: Order this document by MRF428/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF428 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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MRF428/D
MRF428
MRF428
arco 466
ferroxcube ferrite beads
170 680 pF arco 469
1N4997
2204B
ferroxcube 56-590-65
arco 469
332 Ic 8 pin
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ADC 50 Ghz
Abstract: MRF16030
Text: Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz
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MRF16030/D
MRF16030
ADC 50 Ghz
MRF16030
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ic marking ACOM
Abstract: vk200 MRF455 beads ferroxcube FERROXCUBE VK200 marking code macom VK200 FERRITE pin configuration npn transistor 547 MRF-455
Text: Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —
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MRF455/D
MRF455
ic marking ACOM
vk200
MRF455
beads ferroxcube
FERROXCUBE VK200
marking code macom
VK200 FERRITE
pin configuration npn transistor 547
MRF-455
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transistor MRF321
Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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MRF321/D
MRF321
transistor MRF321
JMC5201
redcap
erie redcap capacitors
vk200 coil
erie redcap
vk200
1N4001
MRF321
case 244-04
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j687
Abstract: MRF323 VK200 case 244-04
Text: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323/D
MRF323
j687
MRF323
VK200
case 244-04
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ferroxcube 56-590-65
Abstract: UT25 coaxial 2N6439 UT25 VK200
Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
ferroxcube 56-590-65
UT25 coaxial
2N6439
UT25
VK200
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MRF448
Abstract: 1N4997 2643021801 EQUIVALENT FOR J175
Text: Order this document by MRF448/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF448 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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MRF448/D
MRF448
MRF448
1N4997
2643021801
EQUIVALENT FOR J175
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transistor MRF317
Abstract: atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc
Text: Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF317/D
MRF317
Carrier/120
transistor MRF317
atc 1117
case 316-01
RF POWER TRANSISTOR NPN mrf317
8w RF POWER TRANSISTOR NPN
vk200
J102
MRF317
1117 atc
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TD62592AP
Abstract: No abstract text available
Text: T O SH IB A TD62591 ~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight
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TD62591
594AP
598AP/AF
TD62591AP,
TD62592AP,
TD62593AP,
TD62594AP
TD62595AP,
TD62595AF,
TD62596AP,
TD62592AP
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Untitled
Abstract: No abstract text available
Text: WhHì H E W L E T T AUHM PA C K A R D Avantek Products Thin-Film Cascadable Amplifier Module 20 to 200 MHz Technical Data UTO/UTC 222 Series Features Description Pin Configuration • Frequency Range: 20 to 200 MHz The 222 Series is a thin-film, high gain, low-noise, RF cascade
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0010bS4
4447SA4
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Avantek uto 512
Abstract: utc 222 Avantek amplifier UTC UTC 494 AVANTEK AVANTEK utc Avantek, Inc
Text: AVANTEK INC MME @AVANTEK imiHbfc. 0 007 ^43 b 5 ¡AVA • I * UTO/UTC 222 Series Thin-Flim Cascadable Amplifier Module 20 to 200 MHz FEATURES APPLICATIONS • • • • • • • High Gain IF Stages Frequency Range: 20 to 200 MHz High Gain: 29.5 dB Typ
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7H43-b
Avantek uto 512
utc 222
Avantek amplifier UTC
UTC 494
AVANTEK
AVANTEK utc
Avantek, Inc
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MIL-STD-2015
Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
Text: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low
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1500-MHz
1900-MHz
900-MHz
MIL-STD-2015
MAAM12022
MIL-STD-3015
MAAM22010
AM 12021
AM50-0002
m540
MMIC code D
AM50-0001
DCS-1800
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MACOM MMIC RF AMP
Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
Text: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that
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SW-109)
SWD-119)
MACOM MMIC RF AMP
SW-338
SWD-109
SWD-119
DC bias of gaas FET
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TD62591~594AP,595-598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight
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TD62591
594AP
595-598AP/AF
TD62591AP,
TD62592AP,
TD62593AP,
TD62594AP
TD62595AP,
TD62595AF,
TD62596AP,
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Untitled
Abstract: No abstract text available
Text: That H E W L E T T fttfC J P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade
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Applic53
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AVANTEK utc 211
Abstract: No abstract text available
Text: Whnl H E W L E T T Wi!HÆP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade
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High70
AVANTEK utc 211
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ultrasonic bond
Abstract: schematic WELDER Gunn Diode schematic WELDER capacitor M541 varactor beam lead thermal conductive teflon mesa similar
Text: Application Note M an A M P com pany Bonding and Handling Procedures for Chip Diode Devices M541 V 2.00 Discussion Microstrip Packages and Chip Carriers Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last
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