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    B 595 TRANSISTOR SCHEMATIC Search Results

    B 595 TRANSISTOR SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B 595 TRANSISTOR SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor d 1710

    Abstract: v5856 circuit 5 lo 265 MD59-0062
    Text: Features GND Absolute Maximum Ratings 1 Parameter 6 Volts IF Input Level 0 dBm LO In Power 0 dBm Operating Temperature -55°C to +100°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage. GND


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    PDF MD59-0062 MO-220A MD59-0062 MD59-0062TR transistor d 1710 v5856 circuit 5 lo 265

    b 595 transistor schematic

    Abstract: PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W
    Text: Wireless Power Transistor 15 Watts, 850-960 MHz PH0810-15 PH0810-15 Wireless Power Transistor 15 Watts, 850 - 960 MHz 1 Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP Common Emitter Configuration


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    PDF PH0810-15 1N4245) b 595 transistor schematic PH0810-15 IC 8088 Icq-100 Pacific Wireless 1N4245 f100 0725 5 POUT15W

    MD59-0062

    Abstract: FQFP-N-20
    Text: Features GND MIX OUT GND LO IN 20 GND 1 DRVR IN LOA VDD GND GND DRVR VDD1 GND GND M/A-COM’s MD59-0062 is a fully integrated upconverter / driver IC that includes an IF amplifier, upconverting mixer, two stage driver amplifier and LO buffer in a miniature 4 mm plastic FQFP-N package.


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    PDF MD59-0062 MO-220A AM59-0062 AM59-0062TR FQFP-N-20

    Crss RF

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 2/18/03 MAPLST2122-060WF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.


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    PDF MAPLST2122-060WF 28VDC, -45dB 096MHz) 2110MHz) Crss RF

    transistor 10mhz 60w

    Abstract: 60W POWER AMPLIFIER CIRCUIT MAPLST2122-060CF transistor f1
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 MAPLST2122-060CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.


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    PDF MAPLST2122-060CF 28VDC, -45dB 096MHz) 2110MHz) transistor 10mhz 60w 60W POWER AMPLIFIER CIRCUIT MAPLST2122-060CF transistor f1

    MRF16006

    Abstract: No abstract text available
    Text: Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz


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    PDF MRF16006/D MRF16006 MRF16006

    ferroxcube 56-590-65

    Abstract: ferroxcube ferrite beads transistor 2439 MRF454 FERROXCUBE VK200 vk200 VK200 FERRITE VK200-20/4B vk200-20 1817pF
    Text: Order this document by MRF454/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF454 Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —


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    PDF MRF454/D MRF454 ferroxcube 56-590-65 ferroxcube ferrite beads transistor 2439 MRF454 FERROXCUBE VK200 vk200 VK200 FERRITE VK200-20/4B vk200-20 1817pF

    MRF428

    Abstract: arco 466 ferroxcube ferrite beads 170 680 pF arco 469 1N4997 2204B ferroxcube 56-590-65 arco 469 332 Ic 8 pin
    Text: Order this document by MRF428/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF428 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


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    PDF MRF428/D MRF428 MRF428 arco 466 ferroxcube ferrite beads 170 680 pF arco 469 1N4997 2204B ferroxcube 56-590-65 arco 469 332 Ic 8 pin

    ADC 50 Ghz

    Abstract: MRF16030
    Text: Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz


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    PDF MRF16030/D MRF16030 ADC 50 Ghz MRF16030

    ic marking ACOM

    Abstract: vk200 MRF455 beads ferroxcube FERROXCUBE VK200 marking code macom VK200 FERRITE pin configuration npn transistor 547 MRF-455
    Text: Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics —


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    PDF MRF455/D MRF455 ic marking ACOM vk200 MRF455 beads ferroxcube FERROXCUBE VK200 marking code macom VK200 FERRITE pin configuration npn transistor 547 MRF-455

    transistor MRF321

    Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
    Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc


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    PDF MRF321/D MRF321 transistor MRF321 JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04

    j687

    Abstract: MRF323 VK200 case 244-04
    Text: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V


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    PDF MRF323/D MRF323 j687 MRF323 VK200 case 244-04

    ferroxcube 56-590-65

    Abstract: UT25 coaxial 2N6439 UT25 VK200
    Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


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    PDF 2N6439/D 2N6439 ferroxcube 56-590-65 UT25 coaxial 2N6439 UT25 VK200

    MRF448

    Abstract: 1N4997 2643021801 EQUIVALENT FOR J175
    Text: Order this document by MRF448/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF448 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


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    PDF MRF448/D MRF448 MRF448 1N4997 2643021801 EQUIVALENT FOR J175

    transistor MRF317

    Abstract: atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc
    Text: Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


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    PDF MRF317/D MRF317 Carrier/120 transistor MRF317 atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc

    TD62592AP

    Abstract: No abstract text available
    Text: T O SH IB A TD62591 ~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight


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    PDF TD62591 594AP 598AP/AF TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62592AP

    Untitled

    Abstract: No abstract text available
    Text: WhHì H E W L E T T AUHM PA C K A R D Avantek Products Thin-Film Cascadable Amplifier Module 20 to 200 MHz Technical Data UTO/UTC 222 Series Features Description Pin Configuration • Frequency Range: 20 to 200 MHz The 222 Series is a thin-film, high gain, low-noise, RF cascade


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    PDF 0010bS4 4447SA4

    Avantek uto 512

    Abstract: utc 222 Avantek amplifier UTC UTC 494 AVANTEK AVANTEK utc Avantek, Inc
    Text: AVANTEK INC MME @AVANTEK imiHbfc. 0 007 ^43 b 5 ¡AVA • I * UTO/UTC 222 Series Thin-Flim Cascadable Amplifier Module 20 to 200 MHz FEATURES APPLICATIONS • • • • • • • High Gain IF Stages Frequency Range: 20 to 200 MHz High Gain: 29.5 dB Typ


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    PDF 7H43-b Avantek uto 512 utc 222 Avantek amplifier UTC UTC 494 AVANTEK AVANTEK utc Avantek, Inc

    MIL-STD-2015

    Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
    Text: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low


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    PDF 1500-MHz 1900-MHz 900-MHz MIL-STD-2015 MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800

    MACOM MMIC RF AMP

    Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
    Text: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that


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    PDF SW-109) SWD-119) MACOM MMIC RF AMP SW-338 SWD-109 SWD-119 DC bias of gaas FET

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TD62591~594AP,595-598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight


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    PDF TD62591 594AP 595-598AP/AF TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP,

    Untitled

    Abstract: No abstract text available
    Text: That H E W L E T T fttfC J P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade


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    PDF Applic53

    AVANTEK utc 211

    Abstract: No abstract text available
    Text: Whnl H E W L E T T Wi!HÆP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade


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    PDF High70 AVANTEK utc 211

    ultrasonic bond

    Abstract: schematic WELDER Gunn Diode schematic WELDER capacitor M541 varactor beam lead thermal conductive teflon mesa similar
    Text: Application Note M an A M P com pany Bonding and Handling Procedures for Chip Diode Devices M541 V 2.00 Discussion Microstrip Packages and Chip Carriers Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last


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    PDF