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    AVANTEK TRANSISTOR Search Results

    AVANTEK TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AVANTEK TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    avantek

    Abstract: Avantek amplifier AT-41410 T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator
    Text: AVANTEK Q INC imntt ooobMb3 i 2GE D avantek AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Z .\ Features • • • • Avantek 100 mil Package Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Galn:14.0 dB typical at 2.0 GHz


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    PDF AT-41410 AT-41410 avantek Avantek amplifier T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator

    AVANTEK transistor

    Abstract: No abstract text available
    Text: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:


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    PDF AT-64023 AT-64023 AVANTEK transistor

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical


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    PDF AT-01635 ion202 310-371-8717or310-37l-847a

    AVANTEK transistor

    Abstract: AVANTEK oscillator Avantek, Inc Avantek S Avantek
    Text: AVANTEK INC 20E D AVANTEK • 11411th 0QGb4bb 4 ■ AT-41411 Surface Mount Low Noise ‘ Silicon Bipolar Transistor :" " P i M S' Avantek SOT-143 Plastic Features Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.8 dB typical at 2.0 GHz High Associated Gain: 18.0 dB typical at 1.0 GHz


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    PDF 11411th AT-41411 OT-143 AVANTEK transistor AVANTEK oscillator Avantek, Inc Avantek S Avantek

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC 20E D • AVANTEK i m n t t QGDbSlb 4 AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor ^T3 Avantek 70 mil Package Features • • Low B ias Current Operation: Low Noise Figure: 1.8 d B typical at 2.0 G Hz 2.8 d B typical at 4.0 G Hz


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    PDF AT-60570

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK I N C Q 2GE D avantek im n tb AT-00570 ' Up to 4 GHz General Purpose Silicon Bipolar Transistor _ Avantek 70 mil Package Features • • • • • QDGfci4H3 3 16.0 dBm typical Pi dB at 2.0 GHz 11.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz


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    PDF AT-00570

    avantek

    Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
    Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz


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    PDF AT-42035 AT-42035 microwave64 avantek Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator

    s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    Abstract: AVANTEK transistor AT01670 Avantek amplifier 167 AVANTEK AT016 Avantek S Avantek UA-152
    Text: AVANTEK INC 2QE D AVANTEK i m n b t a AT-01670 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 70 mil Package Features • • • • OGObMSM 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz High Galn-Bandwidth Product: 7.0 GHz typical fr


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    PDF AT-01670 devic56 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AVANTEK transistor AT01670 Avantek amplifier 167 AVANTEK AT016 Avantek S Avantek UA-152

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


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    PDF AT-64020

    Avantek UA-152

    Abstract: No abstract text available
    Text: îm n tt 2QE D AVANTEK INC AVANTEK OGObMTS G AT-42085 Up td 6 GHz Medium Power Silicon Bipolar Transistor 'T - S l- Z l Features • • • • • Avantek 85 Plastic Package .020 .51 High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz High Gain at 1 dB Compression: .


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    PDF AT-42085 Avantek UA-152

    AVANTEK transistor

    Abstract: No abstract text available
    Text: AVANTEK INC EGE 0 AVANTEK D • 1 1 4 1 Tbb 0 D D b 4 b c1 T AT-41435 Up to 6 GHz Low Noise silicon Bipolar Transistor Silicon Transis T • • • . 1 Avantek 35 micro-X Package Features • ^ - Z Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz


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    PDF AT-41435 AVANTEK transistor

    AVANTEK oscillator

    Abstract: Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
    Text: AVANTEK INC 2GE AVANTEK D • llMlìbb 0GGb544 T ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET _ ^ T - 3 > - Z S Avantek Chip Outline Features • Low Noise Figure: 1.1 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz


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    PDF 0GGb544 ATF-13100 rel-48 AVANTEK oscillator Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK Q INC 2D E avantek D im n b fc 00Dti4b3 1 AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor T r ' £ i - ‘Z . l Avantek 100 mil Package Features • Low Noise Figure: 1.6 d B typical at 2.0 GHz 3.0 d B typical at 4.0 GHz • High Associated Galn:14.0 dB typical at 2.0 GH z


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    PDF 00Dti4b3 AT-41410 AT-41410 band42

    AVANTEK TO-8

    Abstract: AVANTEK transistor
    Text: AVANTEK IN C 20E imnbb QoobSTs 4 T> AVANTEK ATF-45171 AT-11571 2-8 GHz Medium Power Gallium Arsenide FET T “*3l-ZS Avantek 70 mil Flange Package Features • • • • High Output Power: 29.0 dBm typical Pi d8 at 4 GHz High Gain at 1 dB Compression:


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    PDF ATF-45171 AT-11571) AVANTEK TO-8 AVANTEK transistor

    Avantek S

    Abstract: AVANTEK transistor
    Text: SOE D AVANTEK I N C • AVANTEK im n b b QOGbS?11! b ATF-26350 AT-10650-3 2-16 GHz General Purpose Gallium Arsenide FET T -2 Avantek 50 mil Package Features • • • • \-Z $ Low Noise Figure: 2.3 dB typical at 12 GHz High Associated Gain: 8.0 dB typical at 12 GHz


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    PDF ATF-26350 AT-10650-3) ATF-26350 CA95054 310-371-8717or Avantek S AVANTEK transistor

    TRANSISTOR SE 135

    Abstract: AVANTEK transistor
    Text: AVANTEK IN C EOE D • O avantek limiti, □QObS'i? ô ATF-46100 AT-8161 2-14 GHz Mèdium Power Gallium Arsenide FET T-31-X5 Avantek Chip Outline Features • High Output Power: 27.0 dBm typical Pi dB at 4 GHz • High Gain at 1 dB Compression: 12.0 dB typical Gi dB at 4 GHz


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    PDF ATF-46100 AT-8161) T-31-X5 A95054 TRANSISTOR SE 135 AVANTEK transistor

    AT12535

    Abstract: AT-12535 Avantek S AVANTEK oscillator Avantek amplifier 167
    Text: avantek 50E inc D avantek ATF-25735 AT-12535 0.5-10 GHz General Purpose Gallium Arsenide FET Avantek 35 micro-X Package Features • • • • i m n t t ooGbS7s 3 High Output Power: 19.0 dBm typical Pi <jb at 4 GHz High Gain: 12.5 dB typical Gi dB at 4 GHz


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    PDF ATF-25735 AT-12535) 3lO-371-8717or3lO-37l AT12535 AT-12535 Avantek S AVANTEK oscillator Avantek amplifier 167

    atf-25100

    Abstract: AVANTEK transistor AVANTEK ATF-25100-GP3 93 40s
    Text: AVANTEK Q INC SOE D im n b h OGDhSbS b ATF-25100 AT-8251 0.5-10 GHz Lôw Noise Gallium Arsenide FET avantek Features Avantek Chip Outline • Low Noise Flgure:.0.8 dB typical at 4 GHz » High Associated Gain: 14.0 dB typical at 4 GHz • High Output Power: 21.0 dBm typical Pkjb


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    PDF ATF-25100 AT-8251) ATF-25100 reliab127 AVANTEK transistor AVANTEK ATF-25100-GP3 93 40s

    Avantek, Inc

    Abstract: AVANTEK transistor
    Text: AVANTEK INC EDE D ^AVANTEK • im n b b OGGbbOl b ATF-46171 AT-11671 2-1(rGHz Medium Powef J Gallium Arsenide FET -1 ~T-Z\-zS Avantek 70 mil Flange Package. Features • • • • High Output Power: 27.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression:


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    PDF ATF-46171 AT-11671) F-46171 310-371-8717of Avantek, Inc AVANTEK transistor

    avantek

    Abstract: ATF-10235 AVANTEK transistor Avantek amplifier ld-s1 ATF 351 ATF10235
    Text: AVANTEK GbE D INC O avantek QGGS^b ö I T-31-25 ATF-10235 2-12 GHz Low Noise Gallium Arsenide FET Avantek micro-X Package Features • Low Noise Figure 0.8 dB typical at 4 GHz • Low Bias V d s = 2V, lDs =20 mA • High Associated Gain 13.0 dB typical at 4 GHz


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    PDF ATF-10235 T-31-25 ATF-10235 avantek AVANTEK transistor Avantek amplifier ld-s1 ATF 351 ATF10235

    AT-8160

    Abstract: Avantek Avantek S AVANTEK transistor AT8160 Avantek UA-152
    Text: AVANTEK INC O SQE D • im n tb GOObSTT 1 ■ ATF-46101 {AT-8160 2-10 GHz Medium Power Gallium Arsenide FET avantek T-3.I-ZS Avantek 100 mil Flange Package Features • High Output Power: 27.0 dBm typical Pi dB at 4 GH z • High Gain at 1 dB Com pression:


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    PDF ATF-46101 AT-8160) ATF-46101 AT-8160 Avantek Avantek S AVANTEK transistor AT8160 Avantek UA-152

    at8250

    Abstract: AT82 AVANTEK transistor
    Text: AVANTEK O INC 20E J> ATF-25170 AT-8250 0.5-10 GHz Low Noise Gallium Arsenide FET avantek 'T-'zi-zs Avantek 70 mil Package Features • • • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 21.0 dBm typical Pi dB


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    PDF ATF-25170 AT-8250) at8250 AT82 AVANTEK transistor

    AVANTEK transistor

    Abstract: ATF 13284 AVANTEK
    Text: AVANTEK Q INC EGE avantek îm n b b D ooobsso 4 ATF-13284 1*16 GHz Low Noise Gallium Arsenide FET ~T-Z\~Z.£ Avantek 84 Plastic Package Features • • • • • Low Noise Figure: 0.7 dB typical at 4 GHz High Associated Gain: 15.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB


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    PDF ATF-13284 AVANTEK transistor ATF 13284 AVANTEK

    avantek UTO 511

    Abstract: AVANTEK utc
    Text: AVANTEK INC 1 1 4 1 9 6 6 AVANTEK INC I OLE D 0 AVANTEK 00Dfc,13b 5 | 06E 0 6 1 3 6 D B -'-|4 -o V S \ UTO-552, UTC-552 Thin Film Cascadabie Amplifiers 5-500 MHz January, 1987 „ ' ‘ FEATURES • Low Noise Figure: 2.9 dB • 5 Volt Bias • High Efficiency


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    PDF 00Dfc UTO-552, UTC-552 50-ohm ADS-1543/R-1 481Co avantek UTO 511 AVANTEK utc