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    AVALANCHE PHOTO DIODES Search Results

    AVALANCHE PHOTO DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    AVALANCHE PHOTO DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    avalanche 1550nm photodiode 5 Ghz

    Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
    Text: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.


    Original     		PDF PD893E6 1580nm. 1580nm avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz

    PD8043

    Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
    Text: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.


    Original     		PDF PD8043, PD8933, PD893D3 1600nm. 1600nm PD8043 avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz

    PD8042

    Abstract: PD893D2 PD8932 PD893D
    Text: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.


    Original     		PDF PD8042, PD8932, PD893D2 1600nm. 1600nm PD8042 PD8932 PD8042 PD893D2 PD8932 PD893D

    mitsubishi APD

    Abstract: PD8* APD TIA AGC application note Photo Diodes PD839A4 photo amplifier tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm
    Text: MITSUBISHI PHOTO DIODES PD839A4 InGaAs AVALANCHE PHOTO DIODES PD839A4 Feature DESCRIPTION PD839A4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical


    Original     		PDF PD839A4 PD839A4 10MHz-1 488G/s, mitsubishi APD PD8* APD TIA AGC application note Photo Diodes photo amplifier tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm

    mitsubishi APD

    Abstract: PD8* APD Photo Diodes tia amplifier ghz PD839C4 mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent
    Text: MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 Feature DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical


    Original     		PDF PD839C4 PD839C4 10MHz-1 488G/s, 180um mitsubishi APD PD8* APD Photo Diodes tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent

    avalanche diode

    Abstract: Photo Diodes InGaAs photodiode "Photo Diodes" avalanche photodiode InGaAs avalanche photodiode ingaas ghz PD8042 Avalanche diodes ir photodiode wavelength
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8042,PD8932 DISCRIPTION FEATURES PD8XX2 is an InGaAs avalanche photodiode suitable for • Active diameter 50µm receiving the light having low noise, a wavelength band of • Low


    Original     		PDF PD8042 PD8932 1600nm. 1300nm PD8042 avalanche diode Photo Diodes InGaAs photodiode "Photo Diodes" avalanche photodiode InGaAs avalanche photodiode ingaas ghz Avalanche diodes ir photodiode wavelength

    photo diode

    Abstract: 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • φ35 µ m active diameter a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving


    Original     		PDF PD8933 1600nm. 1550nm photo diode 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode

    diode code m10

    Abstract: avalanche photodiodes 1650nm APD 10ghz
    Text: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area


    Original     		PDF

    HIGH VOLTAGE DIODE kv

    Abstract: C8237 H8236-07 H8236-40 GaAsP Laser Diode Hamamatsu avalanche diode
    Text: HPD HYBRID PHOTO-DETECTOR MODULES H8236-07, -40 PRELIMINARY DATA OCT. 2000 PATENT PENDING The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication


    Original     		PDF H8236-07, SE-171-41 TPMO1011E03 HIGH VOLTAGE DIODE kv C8237 H8236-07 H8236-40 GaAsP Laser Diode Hamamatsu avalanche diode

    InGaAs Photodiode 1550nm

    Abstract: avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550
    Text: PD LD PDINK Series InGaAs Avalanche Photodiodes Inc. InGaAs APD’s PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate 55 micron diameter active area APD’s that responds optimally to


    Original     		PDF 10meter InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550

    resistor 0402

    Abstract: CMD4D13 MAX1932 BAT56W avalanche photodiode bias C3216X7R2A104K TDK FDN337N ECJ-2VC2A151J Schottky Diode SOD123 an3929
    Text: Maxim > App Notes > FIBER-OPTIC CIRCUITS POWER-SUPPLY CIRCUITS Keywords: APD, Avalanche Photo Detectors, HFTA, HFRD, High Voltage, Piezo, SPI Nov 16, 2006 APPLICATION NOTE 3929 Avalanche-Photodiode Detector Circuit Limits Current to 1mA and Improves Transient Response


    Original     		PDF MAX1932, MAX1932 MAX1932ETC 12-Pin com/an3929 MAX1932: AN3929, APP3929, Appnote3929, resistor 0402 CMD4D13 BAT56W avalanche photodiode bias C3216X7R2A104K TDK FDN337N ECJ-2VC2A151J Schottky Diode SOD123 an3929

    16-TQFN-EP

    Abstract: GRM155R71C104KA88 GRM155R61A105KE15 BAT46W DIODE 100V BAT46W-7-F GCM21BR72A104KA37L GRM155R71E103KA01D GCM21BR ME3220-472MLB murata 0402 footprint
    Text: Maxim > App Notes > Power-Supply Circuits Keywords: Avalanche Photo Diode bias, boost converter Mar 31, 2009 APPLICATION NOTE 4374 Power Supply and Accurate Current Monitor for Avalanche Photodiode APD Biasing Applications By: Subbarami Reddy Abstract: This reference design presents a circuit for addressing the power-supply and current-monitoring


    Original     		PDF MAX15031 MAX15031: com/an4374 AN4374, APP4374, Appnote4374, 16-TQFN-EP GRM155R71C104KA88 GRM155R61A105KE15 BAT46W DIODE 100V BAT46W-7-F GCM21BR72A104KA37L GRM155R71E103KA01D GCM21BR ME3220-472MLB murata 0402 footprint

    Untitled

    Abstract: No abstract text available
    Text: new pulse laser diode 905 nm, 75 W pulse laser diode 5 mm epoxy package data sheet new avalanche photo diodes APD230 APD500 data sheets associated links laser diode modules laser diodes LEDs optics price list ROITHNER LASERTECHNIK GmbH Wiedner Hauptstrasse 76, Vienna, Austria


    Original     		PDF APD230 APD500

    24V to 48V dc dc converter step-up

    Abstract: schematic diagram 48v dc regulator 48v to 5v dc schematic Voltage regulator 0V to 48v GLF1608T4R7M GRM188R60J475KE19D GRM188R71H104KA93D LBMF1608T4R7M MIC2290 VJ0603Y104KXAACW1BC
    Text: Application Hint 63 MIC2290 48V Avalanche Photo Diode APD Application Circuit w/ 0603 Chip Inductor Introduction The MIC2290 is an internally compensated standard stepup switching regulator with an integrated power switch and Schottky diode. The attribute of an internal power switch


    Original     		PDF MIC2290 M9999-061506 24V to 48V dc dc converter step-up schematic diagram 48v dc regulator 48v to 5v dc schematic Voltage regulator 0V to 48v GLF1608T4R7M GRM188R60J475KE19D GRM188R71H104KA93D LBMF1608T4R7M VJ0603Y104KXAACW1BC

    VJ0603Y104KXAACW1BC

    Abstract: APD, applications, bias supply LBMF1608 GRM188R71H104KA93D GLF1608T4R7M GRM188R60J475KE19D LBMF1608T4R7M MIC2290 GRM21BR71H474K Avalanche Photo Diode
    Text: MIC2290 APD Evaluation Board 48V Avalanche Photo Diode (APD) Bias Circuit General Description 2. Connect the load to the VOUT (J4) and ground (J5) terminals. The load can be either passive (resistor) or active (electronic load). An ammeter can be placed between


    Original     		PDF MIC2290 MIC2290 M9999-061506 VJ0603Y104KXAACW1BC APD, applications, bias supply LBMF1608 GRM188R71H104KA93D GLF1608T4R7M GRM188R60J475KE19D LBMF1608T4R7M GRM21BR71H474K Avalanche Photo Diode

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b2E D • ¡3427525 GG3fiGfl3 235 ■ NECE DATA SHEET NEC PHOTO DIODE NDL5105P, NDL5105P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COMMUNICATIONS 4 > 3 0 mty \ GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5105P and NDL5105P1 are Germanium Avalanche Photo Diodes w ith singlemode fiber, especially designed fo r detectors


    OCR Scan     		PDF NDL5105P, NDL5105P1 NDL5105P NDL5105P1 NDL5106PI SI-10/125 NDL5100 NDL5100C NDL5100P NDL5104P

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 50><m suitable for receiving the light having low noise, a wavelength band ot • L o w noise


    OCR Scan     		PDF 1600nm.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode • A c tiv e diameter 5 0 /im suitable for receiving the light having low noise, a wavelength band of • L o w noise


    OCR Scan     		PDF 1600nm.

    mitsubishi avalanche photodiode ingaas ghz

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode suitable for • A c tiv e diameter 50 /¿m receiving the light having low noise, a wavelength band of • L o w noise


    OCR Scan     		PDF 1600nm 1300nm mitsubishi avalanche photodiode ingaas ghz

    1550nm photodiode 5 Ghz

    Abstract: 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • 035 a • L o w noise s e n s itiv e receiving the area of 035 light having fim , PD 8X X 3 a wavelength


    OCR Scan     		PDF 1600nm. 1550nm 1550nm photodiode 5 Ghz 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • <t>35^m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having


    OCR Scan     		PDF 1600nm. 1550nm

    InGaAs Photodiode 1550nm

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has • d>35 /i m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having


    OCR Scan     		PDF 1600nm. 1550nm InGaAs Photodiode 1550nm

    Lem LT 300 - t

    Abstract: NDL5200 L5104
    Text: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of


    OCR Scan     		PDF b427525 NDL5103P, NDL5103P1 NDL5103P NDL5103P1 NDL5103P NDL51Q3P1 NDL5100C NDL5104P1 NDL5102 Lem LT 300 - t NDL5200 L5104

    l5506

    Abstract: NDL55 avalanche photodiodes
    Text: N E C ELECTRONICS INC b2E » • b427525 003fil3b 3T7 ■ NECE DATA SHEET NEC LASER DIODES N D L5520P , N D L5520P1 ELECTRON DEVICE 2 .5 Gb/s OPTICAL FIBER COM M UNICATIONS 0 5 0 //m InGaAs AVALANCHE PHOTO DIODE M M F MODULE DESC R IPTIO N N D L5520P and NDL5520P1 are InGaAs Avalanche Photodiodes especially designed for a detector o f 2.5 Gb/s optical fiber


    OCR Scan     		PDF b427525 003fil3b L5520P L5520P1 L5520P NDL5520P1 L5520PC NDL5520P1C. L5516P: L5516P l5506 NDL55 avalanche photodiodes