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ATC100B181JT300XT Price and Stock

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Kyocera AVX Components 100B181JT300XT Silicon RF Capacitors / Thin Film 300volts 180pF 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B181JT300XT		1,381			1 $5.9 10 $5.12 100 $4.2 1000 $3.52 10000 $3.52	Buy Now
TTI	100B181JT300XT	Reel			500	1 - 10 - 100 - 1000 $3.47 10000 $3.47	Buy Now
American Technical Ceramics Corp ATC100B181JT300XT
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Bristol Electronics	ATC100B181JT300XT		220			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip-Germany GmbH	ATC100B181JT300XT		80			1 - 10 - 100 - 1000 - 10000 -	Get Quote

ATC100B181JT300XT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
D260-4118-0000 Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac
A5M06 Abstract: Transistor Z17 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	PDF	AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17
AFT504 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	PDF	AFT05MS004N AFT05MS004NT1 AFT504
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as	Original	PDF	MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1
A5M0 Abstract: IC 2 5/A5M06 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	PDF	AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as	Original	PDF	MMRF1304N MMRF1304NR1 MMRF1304GNR1 MMRF1304NR1
ATC100B471JT200XT Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	PDF	MRFE6VS25N MRFE6VS25NR1 25cale