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    400v 20A ultra fast recovery diode

    Abstract: APT80GA60LD40 MIC4452 APT40GT60BR
    Text: APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT80GA60B2D40 APT80GA60LD40 400v 20A ultra fast recovery diode APT80GA60LD40 MIC4452 APT40GT60BR PDF