8075bn
Abstract: apt8075bn 8090BN APT8090BN
Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω APT8090BN 800V 12.0A 0.90Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS APT 8075BN APT 8090BN UNIT Drain-Source Voltage
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8075b
Abstract: No abstract text available
Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω Ω APT8090BN 800V 12.0A 0.90Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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BD119
Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20
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AD818
AD818DIE
AD820
AD821
AD820DIE
O-204AA/TO-3
BD119
BC148A
APT1002RBNR
1000 volt npn
BD109
APT5025AN
APT904R2BN
BD107
APT1001R3AN
APT1004RBNR
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Untitled
Abstract: No abstract text available
Text: A dvanced po w er Te c h n o l o g y * APT8075BNR 800V 13.0A 0.75Í2 APT8090BNR 800V 12.0A 0.90ÍÍ O D O S POWER MOS IV« AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter APT8075BNR APT8090BNR UNIT
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8075bn
Abstract: 8075b APT7575BN APT7590BN APT8075BN APT8090BN 090Q 7575b
Text: O D Ô s ADVANCED P ow er T e c h n o lo g y 9 APT8075BN APT7575BN APT8090BN APT7590BN POWER MOS IVfi 800V 750V 8Q0V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q Q.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.
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APT8075BNR
Abstract: Kennedy
Text: A dvanced P ow er Tec h n o lo g y 8 O D APT8075BNR APT8090BNR O s H?'w e r m o s n a 800V 13.0A 0.75fi 800V 12.0 A 0.90Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol All Ratings: Tc = 25°C unless otherwise specified.
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APT8075BNR
APT8090BNR
APT8075/8090BNR
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Kennedy
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090Q
Abstract: t8075 t80-75 8075bn APT6076
Text: O A D d v a n c e d P o w er T e c h n o lo g y 9 APT8075BN APT7575BN APT8090BN APT7590BN Ô S POWER MOS IV 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATING S All Ratings: T c = 25°C unless otherwise specified
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APT8075BN
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090Q
Abstract: 8075BN
Text: O A dvanced R ow er Te c h n o lo g y D APT8075BN APT7575BN APT8090BN APT7590BN ô s 5 5 w e r m o s rm 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Í2 0.75Í1 0.90n 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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090Q
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APT5085BN
Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN
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0GDD27b
APT1001RBN
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APT1002R4BN
O-247
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APT501R1BN
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APT5025BN
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y OD OS POWER MOS IV® APT8075BN 800V 13.0A 0.75Í1 APT8090BN 800V 12.0A 0.90Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.
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Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o lo g y O D APT8075BN APT7575BN APT8090BN APT7590BN Ó S POWER MOS IVe 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Í2 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.
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7575BN
8090BN
Na06SÂ
/0608/SÂ
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APT8075BNR
Abstract: APT8090BNR
Text: O D O S A d va n ced R o w er Te c h n o l o g y APT8075BNR APT8090BNR POWER MOS IV' 800V 800V 13.0A 0.75ÍÍ 12.0A 0.90ÍÍ AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol VDSS All Ratings: T c = 25°C unless otherwise specified.
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Text: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR APT8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C
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APT8075BNR
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APT8075BNR
APT8090BNR
MIL-STD-750
T0-247AD
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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APT1002R4BN
APT1002RBNR
APT*1002R4BN
APT5040BNF
FREDFET
APT802R4BN
APT5020BNR
APT5085BN
APT5020BNF
APT5025BN
APT6040BNR
APT5085BNF
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APT802R4KN
Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN
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APT4016BN
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APT41I20BN
APT4025BN
APT4030BN
APT4040BN
APT5020BN
APT5022BN
APT5025BN
APT5040BN
APT802R4KN
APT6018LNR
APT6060BN
mosfet selector guide
APT-6018
APT10M25bnfr
k 3530 MOSFET
1r3b
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