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    APT68GA60LD40 Price and Stock

    Microchip Technology Inc APT68GA60LD40

    IGBT PT 600V 121A TO264
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    Mouser Electronics APT68GA60LD40
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    Newark APT68GA60LD40 Bulk 50
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    Future Electronics APT68GA60LD40 50
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    Microchip Technology Inc APT68GA60LD40 Tube 26 Weeks
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    Onlinecomponents.com APT68GA60LD40
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    TME APT68GA60LD40 1
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    NAC APT68GA60LD40 Tube 34
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    Master Electronics APT68GA60LD40
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    APT68GA60LD40 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT68GA60LD40 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264 [L]; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 68; Original PDF

    APT68GA60LD40 Datasheets Context Search

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    APT68GA60LD40

    Abstract: MIC4452 power rectifier diode 400v 40a
    Text: APT68GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 shifte44) APT68GA60LD40 MIC4452 power rectifier diode 400v 40a

    400v 20A ultra fast recovery diode

    Abstract: TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452
    Text: APT68GA60B2D40 APT68GA60LD40 600V APT68GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60B2D40 APT68GA60LD40 400v 20A ultra fast recovery diode TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452

    APT68GA60LD40

    Abstract: MIC4452 APT68GA60B2D40
    Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 APT68GA60B2D40 APT68GA60LD40 MIC4452 APT68GA60B2D40

    Untitled

    Abstract: No abstract text available
    Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 APT68GA60B2D40 O-247

    APT68GA60B

    Abstract: No abstract text available
    Text: APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 APT68GA60B2D40 APT68GA60LD40 APT68GA60B2D40 O-247 APT68GA60B

    DIODE RECTIFIER BRIDGE SINGLE 200A

    Abstract: APT68GA60LD40 MIC4452
    Text: APT68GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT68GA60LD40 DIODE RECTIFIER BRIDGE SINGLE 200A APT68GA60LD40 MIC4452

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit