Untitled
Abstract: No abstract text available
Text: APT5040CN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)
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APT5040CN
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diode 2U 88
Abstract: 2u 87 x diode APT5040CN MJ 800
Text: D TO-254 G 500V 13.0A 0.400Ω APT5040CNR S TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching • 100% Avalanche Tested • Low Gate Charge • Similar to the 2N7228, JX2N7228 and JV2N7228 MAXIMUM RATINGS
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O-254
APT5040CNR
2N7228,
JX2N7228
JV2N7228
O-254
O-254AA
diode 2U 88
2u 87 x diode
APT5040CN
MJ 800
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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Original
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PDF
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MIL-PRF-19500
ISO9001
APT6015LVR
5020bn
APT6011LVFR
arf450
5017bvr
APT2*61D120J
FREDFETs
apt8015jvr
APT100GF60LR
APT5014LVR
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Untitled
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y APT5040CNR POWER MOS IV 500V 13.0A 0.400ft Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching 100% Avalanche Tested • Low Gate Charge Similar to the 2N7228, JX2N7228 and JV2N7228
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APT5040CNR
400ft
O-254
2N7228,
JX2N7228
JV2N7228
APT5040CNR
O-254AA
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Untitled
Abstract: No abstract text available
Text: ADVANCED POUER TECHNOLOGY blE H • O B ä T W i 00007L1 IS! ■ AVP ADVANCED POWER! Te c h n o l o g y O O M O s POWER MOS IV APT5040CN APT4540CN APT5050CN APT4550CN 500V 13.0A 0.40D 450V 13.0A 0.40Î2 500V 11.5A 0.50Î2 450V 11.5A 0.50Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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00007L1
APT5040CN
APT4540CN
APT5050CN
APT4550CN
4540CN
5040CN
4550CN
5050CN
O-254AA
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APT1003R5CN
Abstract: APT1003R5GN APT801 APT5040CN APT801R2CN APT1002RCN APT4055GN APT5085GN APT601R2GN APT6060CN
Text: ADVANCED P OWE R TECHNOLOGY 20E D • OaSTTDT 0000277 1 T -3 ? - / 3 H ER M ETIC IS O L A T E D CO M M ERCIA L AND H I-R E L M ILITA R Y N -CHAN NEL M O S F ET S IN P U T CAPAC IT A N C E C IS S PF) PO W ER D IS S I P A T IO N PD(MAX) (WATTS) N O TES
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02S7TDT
APT1003R5GN
O-257AA
O-220
APT802RGN
APT601R2GN
APT5085GN
APT4055GN
APT1002RCN
O-254AA
APT1003R5CN
APT801
APT5040CN
APT801R2CN
APT6060CN
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Untitled
Abstract: No abstract text available
Text: advanced power " TA technology jy I* T DE I a S S T T D T □□□□□10 3 e! -15 For Additional Information Contact A PT Sales Representatives O r The Factory. Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5CN APT1004R2CN APT902R5CN APT903RCN
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APT1003R5CN
APT1004R2CN
APT902R5CN
APT903RCN
APT802RCN
APT802R4CN
APT601R2CN
APT601R6CN
APT551RCN
APT551R2CN
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APT1004RGN
Abstract: No abstract text available
Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750
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APT5011AFN
APT40M
80AFN
APT1004RGN
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER T EC HN O LO GY 2GE D • G2S7TDT 00GÜ277 T r - 3 ?~/3 HERMETIC ISOLATED COMMERCIAL AND HI-REL MILITARY N-CHANNEL MOSFETS INPUT CAPAC ITANCE CISS PF POW ER DISSI PATION PD(MAX) (WATTS) NOTES 12.0 880 125 1 5.0 20.0 880 125 1 1.20 6.5
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APT4055GN
APT1002RCN
APT1003R5CN
APT801R2CN
APT802RCN
APT6060CN
APT601R2CN
APT5040CN
APT5085CN
APT4030CN
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