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    APT5010 Price and Stock

    Microchip Technology Inc APT5010LFLLG

    MOSFET N-CH 500V 46A TO264
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    DigiKey APT5010LFLLG Tube 43 1
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    Microchip Technology Inc APT5010LFLLG Tube 32 Weeks
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    NAC APT5010LFLLG Tube 22
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    Microchip Technology Inc APT5010B2FLLG

    MOSFET N-CH 500V 46A T-MAX
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    DigiKey APT5010B2FLLG Tube 40 1
    • 1 $17.38
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    Avnet Americas APT5010B2FLLG Tube 32 Weeks 40
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    Mouser Electronics APT5010B2FLLG 3
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    Microchip Technology Inc APT5010B2FLLG Tube 32 Weeks
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    NAC APT5010B2FLLG Tube 22
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    Microchip Technology Inc APT5010LVRG

    MOSFET N-CH 500V 47A TO264
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    DigiKey APT5010LVRG Tube 31 1
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    Mouser Electronics APT5010LVRG 929
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    Verical APT5010LVRG 61 3
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    Microchip Technology Inc APT5010LVRG Tube 26 Weeks
    • 1 $18.44
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    Onlinecomponents.com APT5010LVRG 61
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    NAC APT5010LVRG Tube 20
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    Microchip Technology Inc APT5010JLLU2

    MOSFET N-CH 500V 41A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5010JLLU2 Bulk 31 1
    • 1 $31.31
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    Avnet Americas APT5010JLLU2 Tube 25 Weeks 34
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    Mouser Electronics APT5010JLLU2
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    Newark APT5010JLLU2 Bulk 34
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    Microchip Technology Inc APT5010JLLU2 25 Weeks
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    NAC APT5010JLLU2 Tube 11
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    Microchip Technology Inc APT5010LLLG

    MOSFET N-CH 500V 46A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5010LLLG Tube 30 1
    • 1 $17.02
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    Find more APT5010 price and stock on Findchips.com

    APT5010 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5010B2 Advanced Power Technology Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Original PDF
    APT5010B2FLL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010B2FLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2FLLG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 46A T-MAX Original PDF
    APT5010B2L Advanced Power Technology 500V 46A 0.100Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5010B2LC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2LC Advanced Power Technology POWER MOS VI 500V 47A 0.100 Ohm Original PDF
    APT5010B2LL Advanced Power Technology POWER MOS 7 500V 46A 0.100 Ohm Original PDF
    APT5010B2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT5010B2LLG Microsemi Power MOSFET; Package: T-MAX [B2]; ID (A): 46; RDS(on) (Ohms): 0.1; BVDSS (V): 500; Original PDF
    APT5010B2VFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010B2VRG Microchip Technology MOSFET N-CH 500V 47A T-MAX Original PDF
    APT5010JFLL Advanced Power Technology POWER MOS 7 500V 44A 0.100 Ohm Original PDF
    APT5010JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5010JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5010JLC Advanced Power Technology POWER MOS VI 500V 44A 0.100 Ohm Original PDF
    APT5010JLL Advanced Power Technology POWER MOS 7 500V 44A 0.100 Ohm Original PDF

    APT5010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT5010LVR

    Abstract: apt5010l
    Text: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5010LVR O-264 O-264 APT5010LVR apt5010l

    APT5010

    Abstract: APT5010LFLL
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 APT5010 APT5010LFLL

    APT5010JLL

    Abstract: No abstract text available
    Text: APT5010JLL 500V 41A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010JLL APT5010JLL

    Untitled

    Abstract: No abstract text available
    Text: APT5010JLL 500V 40A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT5010JLL

    MOS 4362

    Abstract: No abstract text available
    Text: APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5010B2FLL APT5010LFLL O-264 O-247 MOS 4362

    APT5010JVR

    Abstract: No abstract text available
    Text: APT5010JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation · Direct mounting to heatsink isolated package · Low junction to case thermal resistance · Very rugged · Low profile D G Application


    Original     		PDF APT5010JVRU2 100mW OT-227) APT5010JVR

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT5010B2LL APT5010LLL O-247

    25C2240

    Abstract: APT5010JFLL
    Text: APT5010JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT5010JFLL OT-227 25C2240 APT5010JFLL

    Untitled

    Abstract: No abstract text available
    Text: APT5010JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon


    Original     		PDF APT5010JLLU3 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT5010JVRU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT5010JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 100m max @ Tj = 25°C ID = 41A @ Tc = 25°C Features  Power MOS 7® MOSFETs - Low RDSon


    Original     		PDF APT5010JLLU3 OT-227)

    APT5010B2LL

    Abstract: APT5010LLL
    Text: APT5010B2LL APT5010LLL 500V 46A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010B2LL APT5010LLL

    APT5010JLLU2

    Abstract: ISOTOP apt5010
    Text: APT5010JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT5010JLLU2 OT-227) APT5010JLLU2 ISOTOP apt5010

    ISOTOP

    Abstract: APT5010JVRU3
    Text: APT5010JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT5010JVRU3 OT-227) ISOTOP APT5010JVRU3

    Untitled

    Abstract: No abstract text available
    Text: APT5010JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 41A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT5010JLLU2 OT-227)

    APT5010JFLL

    Abstract: No abstract text available
    Text: APT5010JFLL 500V 44A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package


    Original     		PDF APT5010JFLL OT-227 APT5010JFLL

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVFR 44A 0.100Ω 500V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5010JVFR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT5010JN APT5012JN E145592 5010JN 5012JN APT5010/5012JN OT-227

    ls 7400 n

    Abstract: No abstract text available
    Text: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®


    OCR Scan     		PDF APT5010B2VFR O-247 ls 7400 n

    5010JN

    Abstract: APT5010 5012JN APT 5060
    Text: A D VA N CED PO W ER Te c h n o lo g y APT5010JN APT5012JN ISOTOP* 500V 500V 48.0 A 0.10Q 43.0 A 0.12Q S W 'U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF E145592 5010JN 5012JN APT5010/5012JN OT-227 APT5010 APT 5060

    APT5010JVR

    Abstract: diode sg 44
    Text: A dvanced P ow er Te c h n o l o g y ' APT5010JVR 500V 44A 0.1000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVR OT-227 APT5010JVR MIL-STD-750 OT-227 diode sg 44

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVFR A dvanced P ow er Te c h n o lo g y ' 500V 44A 0.100a POWER MOS V FREDFET P m Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVFR OT-227 APT5010JVFR MIL-STD-750 OT-227

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A APT5010B2VR pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V‘ P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®


    OCR Scan     		PDF APT5010B2VR O-247 APT5010B2VR

    APT5010B

    Abstract: No abstract text available
    Text: • 0 2 5 7 * 10 ^ DÜG22Q2 bTT APT5010B2VR ADVANCED POW ER Te c h n o lo g y 500V 47A 0.100Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF G22Q2 APT5010B2VR MIL-STD-750 APT5010B