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    APT40M Search Results

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    APT40M Price and Stock

    Microchip Technology Inc APT40M70JVR

    MOSFET N-CH 400V 53A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M70JVR Tube 40 1
    • 1 $43.95
    • 10 $43.95
    • 100 $37.9601
    • 1000 $37.9601
    • 10000 $37.9601
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    Avnet Americas APT40M70JVR Tube 26 Weeks 20
    • 1 $43.071
    • 10 $43.071
    • 100 $36.2895
    • 1000 $35.9173
    • 10000 $35.9173
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    Mouser Electronics APT40M70JVR 5
    • 1 $43.95
    • 10 $43.95
    • 100 $43.95
    • 1000 $43.95
    • 10000 $43.95
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    Newark APT40M70JVR Bulk 20
    • 1 $43.95
    • 10 $43.95
    • 100 $37.96
    • 1000 $35.67
    • 10000 $35.67
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    Microchip Technology Inc APT40M70JVR Tube 100 26 Weeks
    • 1 $43.95
    • 10 $43.95
    • 100 $37.96
    • 1000 $34.81
    • 10000 $33.68
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    Onlinecomponents.com APT40M70JVR
    • 1 -
    • 10 $42.83
    • 100 $39.17
    • 1000 $39.17
    • 10000 $39.17
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    TME APT40M70JVR 1
    • 1 $63.57
    • 10 $50.56
    • 100 $50.56
    • 1000 $50.56
    • 10000 $50.56
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    NAC APT40M70JVR Tube 8
    • 1 $40.79
    • 10 $40.79
    • 100 $37.57
    • 1000 $34.82
    • 10000 $34.82
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    Richardson RFPD APT40M70JVR 20
    • 1 -
    • 10 -
    • 100 $37.7
    • 1000 $37.7
    • 10000 $37.7
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    Master Electronics APT40M70JVR
    • 1 -
    • 10 $42.83
    • 100 $39.17
    • 1000 $39.17
    • 10000 $39.17
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    Microchip Technology Inc APT40M35JVR

    MOSFET N-CH 400V 93A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M35JVR Tube 2 1
    • 1 $70.15
    • 10 $70.15
    • 100 $70.15
    • 1000 $70.15
    • 10000 $70.15
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    Avnet Americas APT40M35JVR Tube 26 Weeks 10
    • 1 $65.6502
    • 10 $65.6502
    • 100 $54.00525
    • 1000 $57.15899
    • 10000 $57.15899
    Buy Now
    Mouser Electronics APT40M35JVR 1
    • 1 $70.15
    • 10 $70.15
    • 100 $70.15
    • 1000 $70.15
    • 10000 $70.15
    Buy Now
    Newark APT40M35JVR Bulk 10
    • 1 $70.15
    • 10 $70.15
    • 100 $60.58
    • 1000 $56.93
    • 10000 $56.93
    Buy Now
    Microchip Technology Inc APT40M35JVR Tube 26 Weeks
    • 1 $70.15
    • 10 $70.15
    • 100 $60.58
    • 1000 $55.57
    • 10000 $53.74
    Buy Now
    Onlinecomponents.com APT40M35JVR
    • 1 $66.99
    • 10 $59.93
    • 100 $55.39
    • 1000 $55.39
    • 10000 $55.39
    Buy Now
    TME APT40M35JVR 1
    • 1 $101.41
    • 10 $80.65
    • 100 $80.65
    • 1000 $80.65
    • 10000 $80.65
    Get Quote
    NAC APT40M35JVR 5
    • 1 $65.07
    • 10 $65.07
    • 100 $59.93
    • 1000 $55.55
    • 10000 $55.55
    Buy Now
    Master Electronics APT40M35JVR
    • 1 $66.99
    • 10 $59.93
    • 100 $55.39
    • 1000 $55.39
    • 10000 $55.39
    Buy Now

    Microchip Technology Inc APT40M75JN

    MOSFET N-CH 400V 56A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M75JN Tray
    • 1 -
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    • 100 -
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    Microchip Technology Inc APT40M42JN

    MOSFET N-CH 400V 86A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M42JN Tray
    • 1 -
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    Microchip Technology Inc APT40M35JVFR

    MOSFET N-CH 400V 93A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT40M35JVFR Tube 10
    • 1 -
    • 10 $49.744
    • 100 $49.744
    • 1000 $49.744
    • 10000 $49.744
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    APT40M Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT40M35JVFR Microsemi Power MOS V FREDFET Original PDF
    APT40M35JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT40M35PVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT40M42DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT40M42JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT40M42JN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 86A ISOTOP Original PDF
    APT40M70B2VFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70B2VFRG Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70JVFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70JVFR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 400V 53A SOT-227 Original PDF
    APT40M70JVFR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 53A SOT-227 Original PDF
    APT40M70JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT40M70LVFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70LVFRG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 57A TO-264 Original PDF
    APT40M70LVFRG Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT40M70LVFRG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 57A TO-264 Original PDF
    APT40M70LVR Advanced Power Technology POWER MOS V 400V 57A 0.070 Ohm Original PDF
    APT40M75JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT40M75JN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 400V 56A ISOTOP Original PDF
    APT40M80DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF

    APT40M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT40M35PVR 400V 89A 0.035Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


    Original
    PDF APT40M35PVR

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVR 53A 0.070Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT40M70JVR OT-227 E145592

    To267

    Abstract: TO-267
    Text: APT40M82WVR 44A 0.082Ω 400V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT40M82WVR O-267 O-267 To267 TO-267

    Untitled

    Abstract: No abstract text available
    Text: APT40M35PVR 400V W 89A 0.035W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


    Original
    PDF APT40M35PVR Repetitive14

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVR 93A 0.035Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT40M35JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVFR 400V 53A 0.070Ω Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT40M70JVFR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVFR 400V Ω 93A 0.035Ω POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT40M35JVFR OT-227 Cont157) E145592

    APT40M70B2VFR

    Abstract: APT40M70B2VFRG APT40M70LVFR APT40M70LVFRG
    Text: 400V 57A APT40M70B2VFR Ω 0.070Ω APT40M70LVFR APT40M70B2VFRG* APT40M70LVFRG* *G POWER MOS V Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,


    Original
    PDF APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M70LVFRG* O-264 O-264 APT40M70B2 O-247 APT40M70B2VFR APT40M70B2VFRG APT40M70LVFR APT40M70LVFRG

    Untitled

    Abstract: No abstract text available
    Text: 400V 57A APT40M70B2VFR Ω 0.070Ω APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* *G POWER MOS V Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,


    Original
    PDF APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* O-264 O-264 APT40M70B2 O-247

    APT40M35JVFR

    Abstract: No abstract text available
    Text: APT40M35JVFR 400V Ω 0.035Ω 93A POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT40M35JVFR OT-227 E145592 APT40M35JVFR

    APT40M70JVFR

    Abstract: No abstract text available
    Text: APT40M70JVFR 400V 53A 0.070Ω Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    PDF APT40M70JVFR OT-227 E145592 APT40M70JVFR

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT40M70JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT40M70LVR O-264

    "DIODE" SY 171 1 g

    Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
    Text: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise


    OCR Scan
    PDF APT40M42BFN APT35M42BFN MIL-STD-750 "DIODE" SY 171 1 g diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m

    TI OAE

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT40M35JVR 400v 93a 0.035Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


    OCR Scan
    PDF APT40M35JVR OT-227 APT40M35JVR E145592 TI OAE

    diode sy 171 10

    Abstract: diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 APT40M42BFN Diode SY 350
    Text: AD VA NC ED PO WE R T E C H N O L O G Y MIE D Hi □SST'JCH 0 0 0 0 5 0 8 AIO M A V P A dva n c ed P o w er ^ Tec h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEp*


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    PDF 0000SÃ APT40M42BFN APT35M42BFN 97702-1035bol MIL-STD-750 diode sy 171 10 diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 Diode SY 350

    40M75JN

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT40M75JN 400V 56.0A 0.075£2 APT40M90JN 400V 51.0A 0.090£2 ISOTOP* "UL Recognized" File No. E145592 S N-CHANNEL ENHANCEMENT MOI^HIg ITw JLT^GE MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage A PT 40M75JN


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    PDF APT40M75JN APT40M90JN E145592 40M75JN 40M90JN

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVR A dvanced P o w er Te c h n o lo g y 400V 93A 0.035Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT40M35JVR OT-227 APT40M35JVR MIL-STD-750 832nH. OT-227

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT40M42JN 400V 86A 0.042«! "UL Recognized" File No. E145592 S IS O T O P 1 POWER MOS IV® SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified


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    PDF APT40M42JN E145592 40M42JN OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT40M70JVR A DVAN CED PO W ER Te c h n o lo g y 400V 53A 0.070Q POWER MOSV Power MOS V'" is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    PDF APT40M70JVR OT-227 APT40M70JVR MIL-STD-750 OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    PDF APT40M35JVR OT-227

    Untitled

    Abstract: No abstract text available
    Text: AD VA NC ED PO WE R T E C H N O L O G Y □ EST'IO'I 0 0 0 0 5 0 4 bTB * A V P 41E D A Ô'W dvanced P O W iz R O s {2 ) 'T - ÿ i- is . APT40M80AFN 400V 58.0A 0.08; APT35M80AFN 350V 58.0A 0.08L POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFE


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    PDF APT40M80AFN APT35M80AFN MIL-STD-750

    APT8030JN

    Abstract: apt20m25jnr APT8018JNFR apt10050jn APT5012 apt5010jn
    Text: w!Zá A d vanced POW ER TE€2HN0L0GY' APT Product Selector Guide Rds ON (ohms) (watts) (amperes) 100 0.013 520 150 APT10M13JNR+ 4-7 200 0.025 520 100 APT20M25JNR+ 8-11 300 0.045 520 70 APT30M45JNR+ 12-15 400 0.075 0.042 520 690 56 86 APT40M75JN APT40M42JN


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    PDF APT10M13JNR+ APT20M25JNR+ APT30M45JNR+ APT40M75JN APT40M42JN APT5010JN APT5012JNU2* APT5012JNU3* APT50M60JN APT6015JN APT8030JN apt20m25jnr APT8018JNFR apt10050jn APT5012

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er T e c h n o lo g y APT40M42JN 400V 86A 0.042Í2 S Û "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV« SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT40M42JN E145592 40M42JN OT-227