diode 304
Abstract: 11200-1 B2VR 72 RG
Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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Original
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APT30M40B2VR
APT30M40LVR
O-264
APT30M40
O-247
diode 304
11200-1
B2VR
72 RG
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PDF
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APT30M40
Abstract: No abstract text available
Text: APT30M40LVR 76A 0.040Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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Original
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APT30M40LVR
O-264
O-264
APT30M40LVR
APT30M40
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PDF
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Untitled
Abstract: No abstract text available
Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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Original
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APT30M40B2VR
APT30M40LVR
O-264
APT30M40
O-247
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PDF
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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Original
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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PDF
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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Original
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MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
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PDF
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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Original
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MIL-PRF-19500
ISO9001
APT6015LVR
5020bn
APT6011LVFR
arf450
5017bvr
APT2*61D120J
FREDFETs
apt8015jvr
APT100GF60LR
APT5014LVR
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PDF
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rnq ah-16
Abstract: No abstract text available
Text: • R A dvanced W .\A APT30M40LVR pow er Te c h n o l o g y “ 300V 76a 0.040q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OCR Scan
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APT30M40LVR
O-264
APT30M40LVR
rnq ah-16
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PDF
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Untitled
Abstract: No abstract text available
Text: APT30M40LVR A dvanced P o w er Te c h n o l o g y ' 300V 76A 0.040Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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APT30M40LVR
O-264
APT30M40LVR
00A/fis)
MIL-STD-750
870uH,
O-264AA
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PDF
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Untitled
Abstract: No abstract text available
Text: APT30M40LVR A dvanced P o w er Te c h n o l o g y 300V 76A 0.040Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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APT30M40LVR
O-264
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PDF
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nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700
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OCR Scan
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APT1201R6BVR
APT1201R5BVR
APT1001RBVR
APT10086BVR
APT8075BVR
APT8065BVR
APT8056BVR
APT6040BVR
APT6035BVR
APT6030BVR
nt 6600 G
APT60M75JVR
APT30M40JVR
APT20M45B
APT50M50JVR
apt12080jvr
130-131
apt5014lvr
APT5020BVFR
apt40m70jvr
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PDF
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