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    APT20M45SVR Price and Stock

    Microchip Technology Inc APT20M45SVRG

    MOSFET N-CH 200V 56A D3PAK
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    DigiKey APT20M45SVRG Tube 50
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    Avnet Americas APT20M45SVRG Tube 26 Weeks 50
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    Mouser Electronics APT20M45SVRG
    • 1 $11.82
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    Newark APT20M45SVRG Bulk 50
    • 1 $11.82
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    Microchip Technology Inc APT20M45SVRG Tube 26 Weeks
    • 1 $11.82
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    Onlinecomponents.com APT20M45SVRG
    • 1 -
    • 10 $11.48
    • 100 $9.73
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    TME APT20M45SVRG 1
    • 1 $17.22
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    NAC APT20M45SVRG Tube 32
    • 1 $11.31
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    Avnet Silica APT20M45SVRG 28 Weeks 50
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    EBV Elektronik APT20M45SVRG 27 Weeks 50
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    Master Electronics APT20M45SVRG
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    • 10 $11.48
    • 100 $9.73
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    APT20M45SVR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M45SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45SVR Microsemi Power MOS V MOSFET Original PDF
    APT20M45SVRG Microsemi Power MOSFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF

    APT20M45SVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original
    PDF APT20M45SVR APT20M45SVR

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    PDF APT20M45SVR APT20M45SVR

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    PDF APT20M45SVR

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVR A dvanced P o w er Tec h n o lo g y 200V 56A 0.045Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    PDF APT20M45SVR APT20M45SVR

    f3370

    Abstract: No abstract text available
    Text: A dvanced APT20M45SVR pow er Te c h n o lo g y 9 200V 56A 0.045Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    PDF APT20M45SVR APT20M45SVR f3370

    max4860

    Abstract: No abstract text available
    Text: APT20M45SVR • R ADVANCED W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    PDF APT20M45SVR max4860

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


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    PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr