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    Microsemi Corporation APT12M80S

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    APT12M80S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT12M80S Microsemi Power MOSFET; Package: D3 [S]; ID (A): 13; RDS(on) (Ohms): 0.8; BVDSS (V): 800; Original PDF

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    8114

    Abstract: APT12M80B APT12M80S MIC4452
    Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT12M80B APT12M80S 8114 APT12M80B APT12M80S MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT12M80B APT12M80S 800V, 13A, 0.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT12M80B APT12M80S

    49e 335

    Abstract: 8114 APT12M80B APT12M80S MIC4452 torque
    Text: APT12M80B APT12M80S 800V, 12A, 0.90Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT12M80B APT12M80S 49e 335 8114 APT12M80B APT12M80S MIC4452 torque

    Untitled

    Abstract: No abstract text available
    Text: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT12M80B APT12M80S