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Microchip Technology Inc APT12080LVRG MOSFET N-CH 1200V 16A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT12080LVRG	Tube			50	1 - 10 - 100 $24.8502 1000 $24.8502 10000 $24.8502	Buy Now
Avnet Americas	APT12080LVRG	Tube		26 Weeks	30	1 $23.2358 10 $23.2358 100 $19.4025 1000 $20.22839 10000 $20.22839	Buy Now
Mouser Electronics	APT12080LVRG					1 $24.85 10 $24.85 100 $24.85 1000 $24.85 10000 $24.85	Get Quote
Newark	APT12080LVRG	Bulk			30	1 $24.85 10 $24.85 100 $21.44 1000 $20.16 10000 $20.16	Buy Now
Microchip Technology Inc	APT12080LVRG	Tube		26 Weeks		1 $24.85 10 $24.85 100 $21.44 1000 $19.67 10000 $19.03	Buy Now

Onlinecomponents.com	APT12080LVRG					1 $23.71 10 $21.78 100 $19.9 1000 $19.31 10000 $19.31	Buy Now
TME	APT12080LVRG				1	1 $35.89 10 $28.55 100 $28.55 1000 $28.55 10000 $28.55	Get Quote
NAC	APT12080LVRG				15	1 $23.03 10 $23.03 100 $21.21 1000 $19.66 10000 $19.66	Buy Now
Master Electronics	APT12080LVRG					1 $23.71 10 $21.78 100 $19.9 1000 $19.31 10000 $19.31	Buy Now

APT12080LVR Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT12080LVR		Advanced Power Technology	POWER MOS V 1200V 16A 0.800 Ohm		Original	PDF
APT12080LVR		Advanced Power Technology	N-Channel enhancement mode power MOSFET		Original	PDF

APT12080LVR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT12080LVR Abstract: APT1208 Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	Original	PDF	APT12080LVR O-264 O-264 APT12080LVR APT1208
APT12080LVR Abstract: 1200v diode Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT12080LVR O-264 O-264 APT12080LVR 1200v diode
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Untitled Abstract: No abstract text available Text: APT12080LVR A D V A N CED PO W ER Te c h n o l o g y 1200V 16A 0.800Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	PDF	APT12080LVR O-264 DAPT12080LVR
Untitled Abstract: No abstract text available Text: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.800Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT12080LVR O-264 O-264AA
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y APT12080LVR 1200V 16A 0.800ÍÍ POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT12080LVR O-264 APT12080LVR MIL-STD-750 O-264AA
TH 201 Abstract: APT12080LVR Text: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.80012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT12080LVR O-264 APT12080LVR TH 201
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	PDF	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr