APT10M11LVR
Abstract: No abstract text available
Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M11LVR
O-264
O-264
APT10M1LVR
APT10M11LVR
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Untitled
Abstract: No abstract text available
Text: A P T 10M 11 LV R A dvanced W 7Æ P o w e r Te c h n o l o g y ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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O-264
APT10M1LVR
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Untitled
Abstract: No abstract text available
Text: A dvanced W.\A p o w e r Te c h n o lo g y " • R A P T 1 0 M 11 LVR ioov 100a 0.01 i q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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OCR Scan
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O-264
APT10M1LVR
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PDF
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Untitled
Abstract: No abstract text available
Text: A P T 1 0 M 1 1 LVR A dvanced P o w er Te c h n o lo g y ioov 100a 0.01m POWER M OSV Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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O-264
APT10M1LVR
500yH.
O-264AA
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