APT100GT60JRDL Search Results

APT100GT60JRDL Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT100GT60JRDL		Microsemi	Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80;		Original	PDF

APT100GT60JRDL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT10035LLL Abstract: APT100GT60JRDL Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	APT100GT60JRDL 50KHz E145592 APT10035LLL APT100GT60JRDL	PDF
Thunderbolt IGBT Abstract: APT10035LLL APT100GT60JRDL Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	APT100GT60JRDL 50KHz E145592 Thunderbolt IGBT APT10035LLL APT100GT60JRDL	PDF
Untitled Abstract: No abstract text available Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	APT100GT60JRDL 50KHz E145592	PDF
Untitled Abstract: No abstract text available Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	APT100GT60JRDL E145592 50KHz	PDF
Untitled Abstract: No abstract text available Text: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	APT100GT60JRDL 50KHz E145592	PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit	PDF