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    APT100D Price and Stock

    Microchip Technology Inc APT100D60B2G

    DIODE GEN PURP 600V 100A TO247
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    DigiKey APT100D60B2G Tube 46 1
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    Microchip Technology Inc APT100D60BG

    DIODE GEN PURP 600V 100A TO247
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    Microchip Technology Inc APT100DL60BG

    DIODE GEN PURP 600V 100A TO247
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    Microchip Technology Inc APT100DL60HJ

    BRIDGE RECT 1P 600V 100A SOT227
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    DigiKey APT100DL60HJ Bulk 1
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    Microchip Technology Inc APT100DL60HJ 27 Weeks
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    Microchip Technology Inc APT100D60D

    FRED D 600 V 100 A DIE, Projected EOL: 2044-04-30
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    Microchip Technology Inc APT100D60D 22 Weeks
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    APT100D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT100D60BG Microchip Technology FRED D 1000 V 60 A TO-247 Original PDF
    APT100DL60BG Microsemi Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 100; VR (V): 600; trr (nsec): 45; VF (V): 1.25; Qrr (nC): 3800; Original PDF
    APT100DL60BG Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE ULT SOFT 600V 100A TO-247 Original PDF
    APT100DL60HJ Microsemi Bridge Rectifiers - Modules, Discrete Semiconductor Products, MOD DIODE 600V SOT-227 Original PDF

    APT100D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		APT100DL60B APT100DL60S O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		APT100DL60B APT100DL60S O-247 PDF

    apt100dl60b

    Abstract: APT100DL60S C 2328
    Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		APT100DL60B APT100DL60S O-247 Cath30) C 2328 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT100DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 100A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~       


    Original     		APT100DL60HJ OT-227) PDF

    DIODE 615 200A

    Abstract: C 2328 APT100DL60S apt100dl60b APT100DL60 induction heat resonant
    Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		APT100DL60B APT100DL60S O-247 DIODE 615 200A C 2328 APT100DL60 induction heat resonant PDF

    Untitled

    Abstract: No abstract text available
    Text: APT100DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 100A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • •


    Original     		APT100DL60HJ OT-227) PDF

    APT100DQ60

    Abstract: APT100GT60LRG APT100GT60LR
    Text: APT100GT60B2R G APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT100GT60B2R APT100GT60LR 50KHz O-247 APT100DQ60 APT100GT60LRG PDF

    APT100GT60JR

    Abstract: No abstract text available
    Text: APT100GT60JR 600V TYPICAL PERFORMANCE CURVES APT100GT60JR E E Thunderbolt IGBT C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast


    Original     		APT100GT60JR APT100GT60JR 80KHz E145592 PDF

    APT100DQ60

    Abstract: APT200GN60JDQ4 APT200GN60LDQ4 MIC4452 mj 1504 transistor
    Text: APT200GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 C G ISOTOP ® • 600V Field Stop • • • • • E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum


    Original     		APT200GN60JDQ4 APT100DQ60 APT200GN60JDQ4 APT200GN60LDQ4 MIC4452 mj 1504 transistor PDF

    0116 solar

    Abstract: plcs 1530 APT100GN60LDQ4G APT100DQ60 APT100GN60LDQ4 MIC4452
    Text: APT100GN60LDQ4 G 600V TYPICAL PERFORMANCE CURVES APT100GN60LDQ4 APT100GN60LDQ4G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		APT100GN60LDQ4 APT100GN60LDQ4 APT100GN60LDQ4G* O-264 0116 solar plcs 1530 APT100GN60LDQ4G APT100DQ60 MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT100GN60LDQ4 G 600V TYPICAL PERFORMANCE CURVES APT100GN60LDQ4 APT100GN60LDQ4G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original     		APT100GN60LDQ4 APT100GN60LDQ4 APT100GN60LDQ4G* O-264 PDF

    APT200GN60JDQ4

    Abstract: APT100DQ60 MIC4452 Ultra Low VF
    Text: APT200GN60JDQ4 APT200GN60JDQ4 TYPICAL PERFORMANCE CURVES 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight


    Original     		APT200GN60JDQ4 APT200GN60JDQ4 APT100DQ60 MIC4452 Ultra Low VF PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60JDQ4 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT200GN60B2G 600V, VCE ON = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling


    Original     		APT200GN60B2G PDF

    Untitled

    Abstract: No abstract text available
    Text: APT100GT120JRDQ4 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT100GT120JRDQ4 50KHz E145592 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    APT100DQ120

    Abstract: No abstract text available
    Text: APT150GN120J 1200V TYPICAL PERFORMANCE CURVES APT150GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN120J APT100DQ120 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150GN60J 600V TYPICAL PERFORMANCE CURVES APT150GN60J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60J PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: APT100GT120JRDQ4 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT100GT120JRDQ4 50KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE ON = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT200GT60JRDL 50KHz PDF

    apt100gt60

    Abstract: APT10035LLL APT100DQ60 APT100GT60JRDQ4
    Text: APT100GT60JRDQ4 600V, 100A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT100GT60JRDQ4 50KHz E145592 apt100gt60 APT10035LLL APT100DQ60 APT100GT60JRDQ4 PDF

    APT200GN60B2G

    Abstract: APT100DQ60
    Text: APT200GN60B2G 600V, VCE ON = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling


    Original     		APT200GN60B2G APT200GN60B2G APT100DQ60 PDF

    7078

    Abstract: APT100DQ120 APT150GT120JR
    Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT150GT120JR 50KHz E145592 7078 APT100DQ120 APT150GT120JR PDF