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    APR 8910 Search Results

    APR 8910 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    89100-039TRLF Amphenol Communications Solutions PREFERRED P/N SERIES FOR NEW PROJECT: 57202

    Minitek® 2.00mm, Board to Board, Unshrouded Vertical Header, Surface Mount, Double Row, 8 Positions, 2.00mm (0.079in) Pitch..    		 Visit Amphenol Communications Solutions
    89100-040TRLF Amphenol Communications Solutions PREFERRED P/N SERIES FOR NEW PROJECT: 57202

    Minitek® 2.00mm, Board to Board, Unshrouded Vertical Header, Surface Mount, Double Row, 10 Positions, 2.00mm (0.079in) Pitch..    		 Visit Amphenol Communications Solutions
    UPD789102AMC(A)-XXX-5A4 Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation
    UPD789101AMC-XXX-5A4-E2-A Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation
    UPD789101AMC-XXX-5A4-E1-A Renesas Electronics Corporation 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LSSOP, /Embossed Tape Visit Renesas Electronics Corporation

    APR 8910 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MKT-HQ-370-PH 63v

    Abstract: MKT-HQ-370-PH MKT-HQ 370-PH 63v MKT-HQ-370-PH 100v mkt-hq 370 - ph mkt-hq 370 ph PHILIPS MKT 373 100v MKT-HQ-370-PH mkt hq 371 ph mkt-hq
    Text: BC Components Product specification Metallized polyester film capacitors MKT RADIAL POTTED CAPACITORS MKT 370/371/372/373 PITCH 5/7.5/10/15/22.5/27.5 mm handbook, full pagewidth 2222 370 2222 371 2222 372 2222 373 CBA111 Fig.1 Simplified outlines. FEATURES


    Original     		PDF CBA111 HQN-384-02/103" MKT-HQ-370-PH 63v MKT-HQ-370-PH MKT-HQ 370-PH 63v MKT-HQ-370-PH 100v mkt-hq 370 - ph mkt-hq 370 ph PHILIPS MKT 373 100v MKT-HQ-370-PH mkt hq 371 ph mkt-hq

    KP464

    Abstract: Philips KP464 philips KP AXIAL EPOXY LACQUERED TYPES KP462 philips 84701 2222 460 82703 593-BC 2222 2222 107 595 bc
    Text: BC Components Product specification Polypropylene film foil capacitors KP 460 to 464 KP AXIAL EPOXY LACQUERED TYPE handbook, full pagewidth CBA369 Fig.1 Simplified outlines. FEATURES • Supplied loose in box, taped on reel or unidirectional. APPLICATIONS


    Original     		PDF CBA369 HQN-384-13/101" KP464 Philips KP464 philips KP AXIAL EPOXY LACQUERED TYPES KP462 philips 84701 2222 460 82703 593-BC 2222 2222 107 595 bc

    SSD1306

    Abstract: SSD1306Z
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without


    Original     		PDF SSD1306 2002/95/EC) SJ/T11364-2006) SSD1306 SSD1306Z

    SSD1306

    Abstract: Resolution SSD-1306 OLED display SSD1306 SSD1306TR1 SSD1306Z
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without


    Original     		PDF SSD1306 2002/95/EC) SJ/T11364-2006) SSD1306 Resolution SSD-1306 OLED display SSD1306 SSD1306TR1 SSD1306Z

    46LR16320B

    Abstract: Mobile DDR SDRAM IS46LR16320B
    Text: IS43LR16320B, IS46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43LR16320B, IS46LR16320B 16Bits IS43/46LR16320B 16bit outpIS43LR16320B-6BL 60-ball -40oC 32Mx16 IS43LR16320B-6BLI 46LR16320B Mobile DDR SDRAM IS46LR16320B

    Untitled

    Abstract: No abstract text available
    Text: I S43LR32160B, I S46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF S43LR32160B, S46LR32160B 32Bits 46LR32160B 32-bit 16Mx32 IS46LR32160B-6BLA1 90-ball

    54als245aj

    Abstract: qml-38535 54ALS245A CQCC1-N20 GDFP2-F20 GDFP3-F20 5962-R242-92 1015 TO 92
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change tPLH, tPHL, tPZH, tPZL, and tPLZ. Remove vendor, FSCM 04713. 85-09-28 W. Heckman B Convert to military drawing format. Split VIL into temperatures. Add figures 2 and 4. Change propagation delays. Add footnotes to table I.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: I S43/ 46LR32400F 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32400F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF 46LR32400F 32Bits 46LR32400F 32-bit 90-ball 4Mx32 IS46LR32400F-6BLA1

    46LR32400F

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32400F 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32400F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32400F 32Bits IS43/46LR32400F 32-bit IS43LR32400F-6BL 90-ball -40oC 4Mx32 IS43LR32400F-6BLI 46LR32400F Mobile DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR16320C Advanced Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16320C 16Bits IS43/46LR16320C 16-bit -40oC 32Mx16 IS43LR16320C-5BLI IS43LR16320C-6BLI 60-ball

    46LR32160B

    Abstract: Mobile DDR SDRAM 152-Ball 152-Ball PoP
    Text: IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43LR32160B, IS46LR32160B 32Bits IS43/46LR32160B 32-bit 16Mx32 IS43LR32160B-6BLI 90-ball -40oC 46LR32160B Mobile DDR SDRAM 152-Ball 152-Ball PoP

    46LR16800F

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16800F 2M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16800F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16800F 16Bits IS43/46LR16800F 16-bit IS43LR16800F-6BL 60-ball -40oC 8Mx16 IS43LR16800F-6BLI 46LR16800F Mobile DDR SDRAM

    qml-38535

    Abstract: 5962-8607501EA
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added vendor CAGE code 01295. Table II, deleted subgroups 10 and 11 from group C periodic inspections and added 10 and 11 to group A test requirements. Changed 1.3 input voltage range from -1.5 V to -1.2 V. Editorial


    Original     		PDF 5962-E013-92. qml-38535 5962-8607501EA

    Untitled

    Abstract: No abstract text available
    Text: I S43/ 46LR16800F 2M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR16800F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF 46LR16800F 16Bits 46LR16800F 16-bit 60-ball 8Mx16 IS46LR16800F-6BLA1

    OP15AZ

    Abstract: 5962-8954201pa 5962-8954201GA qml-38535 CDFP2-F10 GDFP1-F10 OP-15A OP-15B
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 03. Add case outline H. Add radiation hardness requirements. Update boilerplate to reflect new requirements. – rrp 00-07-12 R. MONNIN B Make changes to TCVOS, IOS, IIB, CMRR, VO, PSRR, SR, GBW, PD tests


    Original     		PDF

    5962F8761501VXA

    Abstract: qml-38535 54AC11008FK ac08d 5962F8761501V9A
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change ac limits in table I. Add vendor CAGE 18714 to device type 01CX. Editorial changes throughout. Add device type 02, add case outline E and CAGE code 01295. Made editorial changes throughout document.


    Original     		PDF F8859. MIL-PRF-38535 F8859 3V146 5962F8761501VXA qml-38535 54AC11008FK ac08d 5962F8761501V9A

    5962-8766106XA

    Abstract: 5962-8766102XA qml-38535 V05 SMD CODE MARKING 5962-8766101xa SMJ27C128-20JM
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Added Arrhenius equation for unbiased bake under margin test method A, back end margin test step C. Corrected military part numbers for device types 01 and 02. Technical changes made to 1.2.2, table I, figure 1, figure 2, figure 4, figure 5, 4.3.1, and table II. Added vendor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 04 for device class V and radiation hardened requirements. Delete CAGE 64155. –ro 00-03-16 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN REV SHEET


    Original     		PDF

    34333

    Abstract: 5962-8670402FA 5962-8670402HA qml-38535 U3158 CDFP2-F10 5962-86704 5962-8670404HA 5962-8670406PA UC1843AJ
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED Add vendor CAGE 34333. Add vendor CAGE U4637. Editorial changes throughout. 87-04-16 M. A. Frye B Add device types 02, 03, and 04. Editorial changes throughout. 87-12-21 M. A. Frye C Change vendor CAGE 12969 to 48726. Change max duty cycle min limit. Add


    Original     		PDF U4637. U4637 U3158 LE174JB 34333 5962-8670402FA 5962-8670402HA qml-38535 U3158 CDFP2-F10 5962-86704 5962-8670404HA 5962-8670406PA UC1843AJ

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 04 for device class V and radiation hardened requirements. Delete CAGE 64155. –ro 00-03-16 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN C Update drawing as part of the 5 year review. - jt


    Original     		PDF

    5962-8976301EA

    Abstract: DG403AZ 5962-8976301M2A 5962-8976301MEA DG403AZ/883 QML-38535 DG403AK/883 DG403AK/883B DG403AZ/883B SMD MARKING CODE s4
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Editorial changes throughout. Change to one part-one part number format. Add appendix. 92-11-04 M. A. Frye B Change drawing to current requirements. Editorial changes throughout. - drw 04-09-24 Raymond Monnin


    Original     		PDF 1ES66 5962-8976301EA DG403AZ 5962-8976301M2A 5962-8976301MEA DG403AZ/883 QML-38535 DG403AK/883 DG403AK/883B DG403AZ/883B SMD MARKING CODE s4

    qml38535

    Abstract: 5962-8982402PA 5962-89824
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R140-95 95-06-13 M. A. FRYE B Drawing updated to reflect current requirements. -ro 01-03-30 R. MONNIN C Update drawing as part of 5 year review. -rrp 07-06-12 ROBERT M. HEBER


    Original     		PDF 5962-R140-95 qml38535 5962-8982402PA 5962-89824

    90ns03

    Abstract: LBAA marking code A0L-A10L A1L smd 662K qml-38535 5962-8861010ZA 5962-8861012UA IDT7133S90G
    Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED A Changes to table I. Editorial changes throughout. 89-10-16 M.A. Frye B Add device types 05 and 06. Add case outline "U" to drawing. Removed vendor CAGE 61772 as source of supply for case outline Y. Changes to table I. Editorial changes throughout.


    OCR Scan     		PDF 5962-The 90ns03 LBAA marking code A0L-A10L A1L smd 662K qml-38535 5962-8861010ZA 5962-8861012UA IDT7133S90G

    CDFP2-F14

    Abstract: 5962-8967701CA 5962-89677 LT1014 LT1014A 5962-89677022A QML38535 5962-8967702DA qml-38535 5962-8967702XA
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with N.O.R. 5962-R228-92. 92-08-11 M.A. FRYE Changes in accordance with N.O.R. 5962-R047-95. 94-12-14 M.A. FRYE Changes in accordance with N.O.R. 5962-R190-95. 95-08-16 M.A. FRYE Changes in accordance with N.O.R. 5962-R146-97.


    OCR Scan     		PDF 5962-R228-92. 5962-R047-95. 5962-R190-95. 5962-R146-97. CDFP2-F14 5962-8967701CA 5962-89677 LT1014 LT1014A 5962-89677022A QML38535 5962-8967702DA qml-38535 5962-8967702XA