AP30G120W Search Results

AP30G120W Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AP30G120W		Advanced Power Electronics	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR		Original	PDF

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features 1100V VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 30A IC C G RoHS Compliant C	Original	PDF	AP30G120W Fig11.
v120t Abstract: AP30G120W Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1200V IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package 30A C G ▼ RoHS Compliant	Original	PDF	AP30G120W Fig11. v120t AP30G120W
ap30g120w Abstract: No abstract text available Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1100V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G ▼ RoHS Compliant	Original	PDF	AP30G120W Fig11. ap30g120w
Untitled Abstract: No abstract text available Text: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E	Original	PDF	AP30G120W-HF-3 100oC AP30G120 30G120W