AOD412 TRANSISTOR Search Results

AOD412 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

AOD412 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Rev 2: June 2004 AOD412, AOD412L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use	Original	AOD412, AOD412L AOD412 AOD412L O-252	PDF
AOD412 Abstract: aoD412 transistor TRANSISTOR AOD412 AOD412L b100Current Text: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.	Original	AOD412 AOD412 AOD412L O-252 aoD412 transistor TRANSISTOR AOD412 b100Current	PDF
aoD412 transistor Abstract: No abstract text available Text: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.	Original	AOD412 AOD412 AOD412L O-252 aoD412 transistor	PDF
TRANSISTOR D412 Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.	Original	AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A	PDF
AOD412 Abstract: AOD4128 Text: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in	Original	AOD4128 AOD4128 AOD412 O-252 1E-05 1E-04	PDF