AO4600L Search Results

AO4600L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO4600L		Alpha & Omega Semiconductor	Complementary Enhancement Mode Field Effect Transistor		Original	PDF

AO4600L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
JEDEC htrb Abstract: ao4600 Text: AOS Semiconductor Product Reliability Report AO4600/AO4600L, rev D Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 7, 2007 This AOS product reliability report summarizes the qualification result for AO4600.	Original	PDF	AO4600/AO4600L, AO4600. AO4600 10-5eV Mil-Std-105D JEDEC htrb
ao4600 Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2 Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)	Original	PDF	AO4600 AO4600 AO4600L AO4600L PD-00165 Complementary POWER MOSFET AO4600 PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
Untitled Abstract: No abstract text available Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)	Original	PDF	AO4600 AO4600 AO4600L AO4600L PD-00165
POWER MOSFET AO4600 Abstract: AO4600 AO4600L Text: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)	Original	PDF	AO4600 AO4600 AO4600L POWER MOSFET AO4600