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    ANALOG DEVICES TRANSISTOR TUTORIALS Search Results

    ANALOG DEVICES TRANSISTOR TUTORIALS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ANALOG DEVICES TRANSISTOR TUTORIALS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NMOS depletion pspice model

    Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    CMOS

    Abstract: No abstract text available
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    nmos transistor 0.35 um

    Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
    Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power


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    PDF XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials

    Untitled

    Abstract: No abstract text available
    Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with


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    mos rm3 data

    Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


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    PDF XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials

    zener diode phc 24

    Abstract: 350v ZENER DIODE -20/zener diode phc 24
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


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    PDF XDM10 XDM10 zener diode phc 24 350v ZENER DIODE -20/zener diode phc 24

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


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    PDF XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"

    MOS RM3

    Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


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    PDF XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials

    zener diode phc

    Abstract: zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15
    Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


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    PDF XDM10 XDM10 zener diode phc zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    "X-Fab" Core cell library

    Abstract: nd65d RM3 transistors XDH10 analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b
    Text: 1.0 µm BCD Process XDH10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 650V Trench Insulated BCD Process Description XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


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    PDF XDH10 XDH10 "X-Fab" Core cell library nd65d RM3 transistors analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


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    PDF XO035 XO035 35-micron MOS RM3

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


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    PDF XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3

    0.6 um cmos process

    Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


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    CMOS spice model

    Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


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    PDF XH035 XH035 35-micron CMOS spice model MOS RM3 Spice model inductor BSIM3v3.2 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


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    op 07 op amp

    Abstract: comparator circuit using op-amp driver using op-amp MT-084 analog devices transistor tutorials BASIC COMPARATOR CIRCUITS op amp measurement OP-07 application OP-07 uses of OP AMP comparator
    Text: MT-084 TUTORIAL Using Op Amps As Comparators Even though op amps and comparators may seem interchangeable at first glance there are some important differences. Comparators are designed to work open-loop, they are designed to drive logic from their outputs, and they are designed to work at high speed with minimal instability.


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    PDF MT-084 Engineer-31, op 07 op amp comparator circuit using op-amp driver using op-amp MT-084 analog devices transistor tutorials BASIC COMPARATOR CIRCUITS op amp measurement OP-07 application OP-07 uses of OP AMP comparator

    jfet folded cascode

    Abstract: folded cascode op amp folded cascode current mirror op amp pin diagram of 741 op-amp pin diagram of op-amp ic 741 OF IC 741 OP AMP op amp 709 709 OP AMP folded cascode op amp gain datasheets of op-amp ic 741
    Text: MT-056 TUTORIAL High Speed Voltage Feedback Op Amps In order to intelligently select the correct high speed op amp for a given application, an understanding of the various op amp topologies as well as the tradeoffs between them is required. The two most widely used topologies are voltage feedback VFB and current feedback


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    PDF MT-056 MT-050, MT051, MT-052) jfet folded cascode folded cascode op amp folded cascode current mirror op amp pin diagram of 741 op-amp pin diagram of op-amp ic 741 OF IC 741 OP AMP op amp 709 709 OP AMP folded cascode op amp gain datasheets of op-amp ic 741

    BJT with i-v characteristics

    Abstract: AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249
    Text: MT-096 TUTORIAL RFI Rectification Concepts INPUT-STAGE RFI RECTIFICATION SENSITIVITY A well-known but poorly understood phenomenon in analog integrated circuits is RFI rectification, specifically as it occurs in op amps and in-amps. While amplifying very small


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    PDF MT-096 BJT with i-v characteristics AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249

    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


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    PDF XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


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    PDF XT018 XT018 18-micron rpp1k1

    ORCAD PSPICE BOOK

    Abstract: CMOS spice model analog devices transistor tutorials Analog Devices MultiSIM Spice AD847 ad817 spice walt Kester vd circuit diagram HINDI op amp model Spice 2g rf transistor spice
    Text: MT-099 TUTORIAL Analog Circuit Simulation ANALOG CIRCUIT SIMULATION INTRODUCTION In recent years there has been much pressure placed on system designers to verify their designs with computer simulations before committing to actual printed circuit board layouts and


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    PDF MT-099 ISBN-10: ISBN-13: ORCAD PSPICE BOOK CMOS spice model analog devices transistor tutorials Analog Devices MultiSIM Spice AD847 ad817 spice walt Kester vd circuit diagram HINDI op amp model Spice 2g rf transistor spice

    SMOS8MV

    Abstract: analog devices transistor tutorials LOW POWER CMOS LOGIC FAMILIES SOI RF transceiver power BJT
    Text: Freescale Foundry Services The Foundry Services vision is to help State-of-the-Art Technology Foundry Web Site Tools organizations create innovative products A global leader in the design and manufacture The Freescale Foundry Services Web site by supplying world-class, specialty


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    ad918

    Abstract: AD7500-series MT-088 SCR Applications Handbook ADG201-series 2 GHz operating high power gain jfets 15-V ADG708 ADG918 ADG919
    Text: MT-088 TUTORIAL Analog Switches and Multiplexers Basics INTRODUCTION Solid-state analog switches and multiplexers have become an essential component in the design of electronic systems which require the ability to control and select a specified transmission path


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    PDF MT-088 1960s ad918 AD7500-series MT-088 SCR Applications Handbook ADG201-series 2 GHz operating high power gain jfets 15-V ADG708 ADG918 ADG919