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    cortex M4

    Abstract: ARM Cortex M4 ARM CORTEX-M4 OSC32KCLK RCMS
    Text: Freescale Semiconductor Application Note Document Number: AN4503 Rev. 0, 5/2012 Power Management for Kinetis and ColdFire+ MCUs When and how to use low-power modes by: Philip Drake System Applications Engineering Austin, Texas Contents 1 Introduction 1


    Original     		PDF AN4503 manageme5284 cortex M4 ARM Cortex M4 ARM CORTEX-M4 OSC32KCLK RCMS

    An Introduction to IGBT Operation

    Abstract: AN4503 IGBT EQUIVALENT AN4503-4 static characteristics of mosfet and igbt n mosfet depletion mosfet 1500v MOS Controlled Thyristor
    Text: AN4503 Application Note AN4503 An Introduction To IGBT Operation Application Note Replaces September 2000 version, AN4503-4.0 AN4503-4.1 July 2002 The power semiconductor devices available on the market can be categorised into three groups viz., can be grown and so this type of structure is limited to voltages


    Original     		PDF AN4503 AN4503 AN4503-4 An Introduction to IGBT Operation IGBT EQUIVALENT static characteristics of mosfet and igbt n mosfet depletion mosfet 1500v MOS Controlled Thyristor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Application Note Document Number:AN4503 Rev. 1, 11/2012 Power Management for Kinetis and ColdFire+ MCUs When and how to use low-power modes by: Philip Drake Contents 1 Introduction 1


    Original     		PDF AN4503

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Reference Manual Document Number: KL26P121M48SF4RM Rev. 3.3, 4/2015 KL26 Sub-Family Reference Manual with Addendum Rev. 3.3 of the KL26 Sub-Family Reference Manual has two parts: • The addendum to revision 3.2 of the reference manual, immediately following this cover page.


    Original     		PDF KL26P121M48SF4RM KL26P121M48SF4RMAD 36-pin

    GP800

    Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
    Text: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		PDF GP800DCS18 DS5221-4 DS5221-5 GP800 AN4508 AN4502 AN4503 AN4505 GP800DCS18 dc chopper circuit application

    GP801DCM18

    Abstract: AN4502 AN4503 AN4505 AN4506
    Text: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		PDF GP801DCM18 DS5365-3 GP801DCM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
    Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP401LSS18 DS5288-1 GP401LSS18 AN4502 AN4503 DSA0018823 ups sine wave inverter circuit diagram

    AN4502

    Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
    Text: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001


    Original     		PDF GP2401ESM18 DS5345-1 DS5345-2 AN4502 AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DCM18
    Text: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP800DCM18 DS5363-3 GP800DCM18 an1800V, AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
    Text: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


    Original     		PDF GP200MLK12 GP200MKS12 DS5448-1 AN4502 AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM18
    Text: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP2400ESM18 DS5406-1 GP2400ESM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
    Text: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001


    Original     		PDF GP800NSS33 DS5358-2 GP800NSS33 AN4502 AN4503 AN4505 AN4506 an5167 440nF DS-5358

    723 ic internal diagram

    Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
    Text: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)


    Original     		PDF GP1201FSS18 DS5411-1 GP1201FSS18 723 ic internal diagram AN4502 AN4503 AN4505 AN4506

    K1p TRANSISTOR

    Abstract: AN4502 AN4503 AN4505 GP1600FSM18
    Text: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001


    Original     		PDF GP1600FSM18 DS5361-1 DS5361-2 GP1600FSM18 K1p TRANSISTOR AN4502 AN4503 AN4505

    AN4505

    Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
    Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF GP800DDM18 DS5364-2 DS5364-3 3300y AN4505 GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram

    AN4502

    Abstract: AN4503 AN4505 GP800FSS18
    Text: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module


    Original     		PDF GP800FSS18 DS5261-2 DS5261-3 AN4502 AN4503 AN4505 GP800FSS18

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Users Guide KLQRUG Rev. 0, 09/2012 Kinetis L Peripheral Module Quick Reference A Compilation of Demonstration Software for Kinetis L Series Modules This collection of code examples, useful tips, and quick reference material has been created to help you speed the


    Original     		PDF com/files/32bit/software/KL25

    DS5402-1

    Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
    Text: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)


    Original     		PDF GP800FSM18 DS5402-1 GP800FSM18 AN4502 AN4503 AN4505 AN4506

    AN4502

    Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
    Text: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001


    Original     		PDF GP1601FSS18 DS5248-3 DS5248-4 AN4502 AN4503 AN4505 GP1601FSS18

    AN5190

    Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
    Text: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ


    Original     		PDF GP200MHS12 GP200MHB12S DS4339-5 DS5296-1 GP200MHS12 AN5190 AN4502 AN4503 AN4508

    DS5401-1

    Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
    Text: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS


    Original     		PDF GP801FSM18 DS5401-1 GP801FSM18 basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 DS5401

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


    Original     		PDF GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
    Text: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF GP800DDM12 DS5291-1 DS5291-2 AN4502 AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP201MHS18
    Text: GP201MHS18 GP201MHS18 Low VCE SAT Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters


    Original     		PDF GP201MHS18 DS5290-2 AN4502 AN4503 AN4505 AN4506 GP201MHS18