b 595 transistor
Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor
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MA4T243
MA4T24300
b 595 transistor
transistor 5 Amp 700 volt
transistor b 595
MA4T24335
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55LT
Abstract: No abstract text available
Text: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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200mA
55LT
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NGA-689
Abstract: SCA-12 4GHZ TRANSISTOR
Text: Preliminary Preliminary SCA-12 Product Description Sirenza Microdevices SCA-12 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
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SCA-12
SCA-12
NGA-689
EDS-101391
4GHZ TRANSISTOR
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MP4T243
Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages
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MP4T243
MP4T24300
MP4T24335
Bipolar Transistor
ma4t24335
Transistor 35 MICRO-X
MP4T24335
S21E
S22E
Silicon Bipolar Transistor MICRO-X
low noise transistors microwave
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nec 2532
Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain
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2SC5014
2SC5014)
2SC5014-T2
nec 2532
NEC JAPAN 282 110 01
NEC 282 185 01
816-102
2SC5014
2SC5014-T1
2SC5014-T2
NEC 2134 transistor
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NEC JAPAN 237 521 02
Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Text: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART
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2SC5015
2SC5015-T1
2SC5015-T2
05Special:
NEC JAPAN 237 521 02
3563 1231
2SC5014
2SC5015
2SC5015-T1
2SC5015-T2
t83 230 02
TD-7938
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ic 4040
Abstract: IC 7427 134179 IC 8256 10AM12 153637
Text: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10AM12
10AM12
150oC
200o---
ic 4040
IC 7427
134179
IC 8256
153637
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10AM12
Abstract: COB1
Text: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10AM12
10AM12
150oC
200output
COB1
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Untitled
Abstract: No abstract text available
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages
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MP4T243
MP4T24300
MP4T24335
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transistor rf m 9837
Abstract: No abstract text available
Text: e PTF 10114 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 watts power output. Nitride surface
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G-200,
1-877-GOLDMOS
1301-PTF
transistor rf m 9837
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G200
Abstract: No abstract text available
Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is an internally matched 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation
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P4525-ND
P5182-ND
1-877-GOLDMOS
1522-PTF
G200
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microwave amplifier 2.4 ghz 10 watts
Abstract: amplifier TRANSISTOR 12 GHZ 2324-12L
Text: 2324-12L 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz GENERAL DESCRIPTION The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier
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2324-12L
2324-12L
microwave amplifier 2.4 ghz 10 watts
amplifier TRANSISTOR 12 GHZ
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1417 transistor
Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Text: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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417-12A
1417 transistor
transistor 1417
microwave amplifier 2.4 ghz 10 watts
c 1417
1417-12A
2.4 ghZ rf transistor
amplifier TRANSISTOR 12 GHZ
RF TRANSISTOR 1 WATT
POWER TRANSISTOR 1 WATT 2.4 GHZ
1417 ic
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Untitled
Abstract: No abstract text available
Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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JMC5701
220ohm
220ZTR
1-877-GOLDMOS
1522-PTF
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702 P TRANSISTOR
Abstract: 702 Z TRANSISTOR G200 JMC5701 ghz 100 watts amplifier circuit diagram capacitor 0.1uf DIGIKEY resistor 220ohm
Text: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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JMC5701
220ohm
220ZTR
1-877-GOLDMOS
1522-PTF
702 P TRANSISTOR
702 Z TRANSISTOR
G200
JMC5701
ghz 100 watts amplifier circuit diagram
capacitor 0.1uf DIGIKEY
resistor 220ohm
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •
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2SC5015
2SC5015-T1
2SC5015-T2
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3563 1231
Abstract: transistor NEC B 617 nec d 1590
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain
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2SC5015
2SC5015-T1
2SC5015-T2
3563 1231
transistor NEC B 617
nec d 1590
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NEC 2532 n 749
Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5014
2SC5014-T1
2SC5014-T2
2SC5014)
NEC 2532 n 749
NEC 2532
PT1060
transistor NEC D 822 P
transistor NEC D 587
NEC 2134 transistor
transistor c 6091
transistor sp 772
SP 2822
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Untitled
Abstract: No abstract text available
Text: IO Stanford Microdevices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage
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SCA-12
SCA-12
100mA
38dBm.
100mW
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Untitled
Abstract: No abstract text available
Text: sö Stanford Microdevices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltagej
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SCA-12
100mA
38dBm.
100mW
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PTF10027
Abstract: ericsson 10027 f 0952
Text: ERICSSON $ PTF 10027 12 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 12 watts minimum output power. Nitride surface passivation
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IEC-68-2-54
Std-002-A
P4917-ND
P5276
5801-PC
20AWG,
PTF10027
ericsson 10027
f 0952
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MB522
Abstract: No abstract text available
Text: Stati ford M i crudev ices SCA-12 Product Description Stanford M icrodevices’ SCA-12 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage|
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SCA-12
38dBm.
100mW
MB522
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QE R 643
Abstract: No abstract text available
Text: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip
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MA4T243
MA4T24300
MA4T24300
MA4T24335
QE R 643
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Untitled
Abstract: No abstract text available
Text: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages
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MA4T243
MA4T24300
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