cooler master fan
Abstract: 2410ML-04W-B60 DC1205SY dynaeon PGA socket 478 cooler clip DC1205 DC1205B 50102B AMD Thermal Design Guide HSC002P124
Text: AMD-K6 ® Processor Thermal Solution Design Application Note Publication # 21085 Rev: G Issue Date: August 1998 Amendment/0 This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the
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21085G/0--August
cooler master fan
2410ML-04W-B60
DC1205SY
dynaeon
PGA socket 478 cooler clip
DC1205
DC1205B
50102B
AMD Thermal Design Guide
HSC002P124
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AVC fans
Abstract: A5007 DC1205SY transistors 13001 DP5-5025 TelTec TC5050B TEL-TEC, TC5050B AVC cooler
Text: AMD-K6 ® Processor Thermal Solution Design Application Note Publication # 21085 Rev: F Issue Date: May 1998 Amendment/0 This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the
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21085F/0--May
AVC fans
A5007
DC1205SY
transistors 13001
DP5-5025
TelTec
TC5050B
TEL-TEC, TC5050B
AVC cooler
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Untitled
Abstract: No abstract text available
Text: Bothhand USA Connector AMD LF1S022 AM79C98 1 ALTIMA BROADCOM LF1S023 LT1S010 LT1S014 LT1S025 LU1S025 LU1S041A CYPRESS email:[email protected] DAVICOM ICS INTEL KENDIN LUCENT CS8023/ T7200/ 83C92/ 88392/ CS61544 T7201/ T7213/ T7220/ T7240/ T7241 Macronix
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LF1S022
AM79C98
CS8023/
83C92/
CS61544
LF1S023
LT1S010
LT1S014
LT1S025
LU1S025
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68230A
Abstract: pal16v8q PAL16R8ACN 99029 PAL16V8Q-15JC4 PAL16V8Z AM993 17640 8253 amd thermal analysis on pcb
Text: 9/5/01 PKG. TYPE CD 016 PD 016 PD 016 CD 020 CD 020 CD 020 CD 020 CD 020 PD 020 PD 020 Page 1 Thermal Resistance Analysis Update LD. FRM. NUMBER 18543 405 563 461 480 480 480 18550 590 590 X PAD DIM. MILS 167 140 150 127 160 160 160 167 150 150 MSD Advanced Assembly Technology
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74015A
7713A
67711C
7714A
7411Y
4196B
AMC67401
AM7940-125
67401N
PAL16V8Z
68230A
pal16v8q
PAL16R8ACN
99029
PAL16V8Q-15JC4
PAL16V8Z
AM993
17640
8253 amd
thermal analysis on pcb
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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Am29BL162C
16-Bit)
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Am29BL802CB-120R
Abstract: No abstract text available
Text: PRELIMINARY Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
Am29BL802CB-120R
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AM29BL162CB
Abstract: No abstract text available
Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors
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Am29BL162C
16-Bit)
AM29BL162CB
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AM29BL162C
Abstract: No abstract text available
Text: Back ADVANCE INFORMATION Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors
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Am29BL162C
16-Bit)
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
16-038-SSO56-2
ES107
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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Am29BL162C
16-Bit)
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Untitled
Abstract: No abstract text available
Text: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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Am29BL162C
16-Bit)
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120R
Abstract: IN3064 SA10
Text: Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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Am29BL162C
16-Bit)
20-year
120R
IN3064
SA10
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120R
Abstract: IN3064
Text: Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
20-year
120R
IN3064
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D il Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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Am29BL162C
16-Bit)
20-year
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
000NTRUSION
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
16-038-SS056-2
ES107
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am2101
Abstract: AM9101 256x4 static ram
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW
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256x4
Am9101/Am91L01
1024-bit,
MIL-STD-883
am2101
AM9101
256x4 static ram
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am9101
Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads
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Am9101
Am9101/Am91L01
1024-bit,
MIL-STD-883,
91l01
am91l01
9101C
Am9101/91L01/2101
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZI A m 29B L 162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors
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16-Bit)
Am29BL162C
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Am2101
Abstract: AM9101 2101 256x4 L01A amd 9101 256x4 static ram ram 256 256x4 Am2101-2 AM9101CPC
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW
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256x4
Am9101/Am91L01
1024-bit,
MIL-STD-883
Am2101
AM9101
2101 256x4
L01A
amd 9101
256x4 static ram
ram 256 256x4
Am2101-2
AM9101CPC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with w rap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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Am29BL162C
16-Bit)
20-year
29BL162C
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74LS189 equivalent
Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.
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AMD-599
LM101
SN54LS01
132nd
74LS189 equivalent
74LS200
AmZ8036
Z8104
74LS300
AM9511
Am2505
27s13
54S244
27LS00
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