temperature based speed control of exhaust fan using triac circuit diagram
Abstract: "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s
Text: HB214/D Rev. 2, Nov-2001 Rectifier Applications Handbook Rectifier Applications Handbook ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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HB214/D
Nov-2001
NCP1200
MBRS360T3
MUR160
r14525
HB214/D
temperature based speed control of exhaust fan using triac circuit diagram
"OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS"
simple schematic diagram PWM 40a hydrogen
EI - 33c TRANSFORMER
EI 33c TRANSFORMER
General Electric SCR Manual, Fifth Edition, 1972
rectifiers and zener diodes data
NCP1200 CROSS REFERENCE
pc smps transistor manual substitution
RCA Solid state Linear Integrated Circuits 1970s
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R2501
Abstract: R2502 MR2506 motorola silicone controlled rectifier motorola bridge rectifier MR2500 MR2501 MR2502 MR2504 R2500
Text: MOTOROLA Order this document by MR2500/D SEMICONDUCTOR TECHNICAL DATA Medium-Current Silicon Rectifiers MR2500 Series . . . compact, highly efficient silicon rectifiers for medium–current applications requiring: MR2504 and MR2510 are Motorola Preferred Devices
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MR2500/D
MR2500
MR2504
MR2510
R2501
R2502
MR2506
motorola silicone controlled rectifier
motorola bridge rectifier
MR2500
MR2501
MR2502
R2500
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR1100/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifier MBR1100 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR1100/D
MBR1100
MBR1100/D
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B1100
Abstract: MBR1100 voltage rectifier diode motorola
Text: MOTOROLA Order this document by MBR1100/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifier MBR1100 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR1100/D
MBR1100
B1100
MBR1100
voltage rectifier diode motorola
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XBRP40045CTL
Abstract: No abstract text available
Text: MOTOROLA Order this document by XBRP40045CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SWITCHMODE Schottky Power Rectifier XBRP40045CTL POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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XBRP40045CTL/D
XBRP40045CTL
XBRP40045CTL
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XBRP400100CTL
Abstract: No abstract text available
Text: MOTOROLA Order this document by XBRP400100CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SWITCHMODE Schottky Power Rectifier XBRP400100CTL POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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XBRP400100CTL/D
XBRP400100CTL
XBRP400100CTL
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m19500/483
Abstract: M19500/483-03 all silicon metal rectifier diode product List MIL-PRF-19500/483 TM1027
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 July 2009. MIL-PRF-19500/483D 2 April 2009 SUPERSEDING MIL-PRF-19500/483C 16 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER,
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MIL-PRF-19500/483D
MIL-PRF-19500/483C
M19500/483-01
M19500/483-04,
MIL-PRF-19500.
m19500/483
M19500/483-03
all silicon metal rectifier diode product List
MIL-PRF-19500/483
TM1027
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1bl3 motorola
Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBRS130LT3/D
MBRS130LT3
1bl3 motorola
diode 1bl3
1BL3
diode 1bl3 141
MBRS130LT3
MBRS130LT3 marking
403A-03
1BL3 141
schottky power rectifier MOTOROLA
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MOTOROLA 813
Abstract: MOTOROLA 813 transistor MBRP20035L 357D-01
Text: MOTOROLA Order this document by MBRP20035L/D SEMICONDUCTOR TECHNICAL DATA Product Preview SWITCHMODE Schottky Power Rectifier MBRP20035L POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation
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MBRP20035L/D
MBRP20035L
MOTOROLA 813
MOTOROLA 813 transistor
MBRP20035L
357D-01
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MBRP30035L
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRP30035L/D SEMICONDUCTOR TECHNICAL DATA Product Preview SWITCHMODE Schottky Power Rectifier MBRP30035L POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation
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MBRP30035L/D
MBRP30035L
MBRP30035L
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SPB25
Abstract: SPA25 SPC25 SPD25 all silicon metal rectifier diode product List spb25 jan
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 March 2009. MIL-PRF-19500/446E 15 December 2008 SUPERSEDING MIL-PRF-19500/446D 13 September 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE,
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MIL-PRF-19500/446E
MIL-PRF-19500/446D
SPA25,
SPB25,
SPC25,
SPD25,
MIL-PRF-19500.
SPB25
SPA25
SPC25
SPD25
all silicon metal rectifier diode product List
spb25 jan
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schottky DIODE MOTOROLA B14
Abstract: Diode Motorola B14 b14 smb diode MBRS140T3
Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBRS140T3/D
MBRS140T3
schottky DIODE MOTOROLA B14
Diode Motorola B14
b14 smb diode
MBRS140T3
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b20100
Abstract: schottky DIODE MOTOROLA B20100 B20100 diode b20100 transistor 221D AN1040 MBRF20100CT
Text: MOTOROLA Order this document by MBRF20100CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20100CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features
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MBRF20100CT/D
MBRF20100CT
b20100
schottky DIODE MOTOROLA B20100
B20100 diode
b20100 transistor
221D
AN1040
MBRF20100CT
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RECTIFIER DIODES Motorola
Abstract: MBR3100-D voltage rectifier diode motorola
Text: MOTOROLA Order this document by MBR3100/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifier MBR3100 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR3100/D
MBR3100
RECTIFIER DIODES Motorola
MBR3100-D
voltage rectifier diode motorola
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b1045 diode
Abstract: B1045 B1045 TO-220 Motorola B1045 diode b1045 2n2222 motorola B1045-1 b1045 ON RECTIFIER DIODES Motorola 1N5817
Text: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF1045 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features
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MBRF1045/D
MBRF1045
b1045 diode
B1045
B1045 TO-220
Motorola B1045
diode b1045
2n2222 motorola
B1045-1
b1045 ON
RECTIFIER DIODES Motorola
1N5817
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1N5827
Abstract: 1N5828 1N5826 1N5827 equivalent 1N5828 equivalent
Text: MOTOROLA Order this document by 1N5826/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet 1N5826 1N5827 1N5828 Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5826/D
1N5826
1N5827
1N5828
1N5826
1N5828
1N5827
1N5827 equivalent
1N5828 equivalent
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RECTIFIER DIODES Motorola
Abstract: b340 motorola
Text: MOTOROLA Order this document by MBR340/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifier MBR340 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBR340/D
MBR340
DeviceMBR340/D
RECTIFIER DIODES Motorola
b340 motorola
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0.6 um cmos process
Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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B2060
Abstract: b2060 Motorola 221D AN1040 MBRF2060CT TO220 HEATSINK
Text: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features
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MBRF2060CT/D
MBRF2060CT
B2060
b2060 Motorola
221D
AN1040
MBRF2060CT
TO220 HEATSINK
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m19500/469
Abstract: m19500/469-01 jxm19500/469-01 SAE AS39029 force jm19500 M19500 MIL-PRF-19500/469 AS39029 M19500/469-03 JANTX
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 December 2006. INCH-POUND MIL-PRF-19500/469D 10 September 2008 SUPERSEDING MIL-PRF-19500/469C 4 April 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE,
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MIL-PRF-19500/469D
MIL-PRF-19500/469C
M19500/469-01,
MIL-PRF-19500.
m19500/469
m19500/469-01
jxm19500/469-01
SAE AS39029 force
jm19500
M19500
MIL-PRF-19500/469
AS39029
M19500/469-03 JANTX
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2N2222 motorola
Abstract: B3045 340F-03 motorola 2n2222 MBR3045WT
Text: MOTOROLA Order this document by MBR3045WT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR3045WT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device
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MBR3045WT/D
MBR3045WT
2N2222 motorola
B3045
340F-03
motorola 2n2222
MBR3045WT
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MBR3045PT motorola
Abstract: B3045 2N2222 motorola motorola 2n2222 MOTOROLA 2N6277 motorola diode device data DIODE 638 MOTOROLA MBR3045PT-D 2N6277 applications MOTOROLA 2n2222 plastic
Text: MOTOROLA Order this document by MBR3045PT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR3045PT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device
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MBR3045PT/D
MBR3045PT
MBR3045PT motorola
B3045
2N2222 motorola
motorola 2n2222
MOTOROLA 2N6277
motorola diode device data
DIODE 638 MOTOROLA
MBR3045PT-D
2N6277 applications
MOTOROLA 2n2222 plastic
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R2501
Abstract: R2506 motorola button diode R-2501
Text: MOTOROLA Order this document by MR250Q/D SEMICONDUCTOR TECHNICAL DATA Medium -Current Silicon Rectifiers MR2500 Series . . . compact, highly efficient silicon rectifiers for medium-current applications requiring: MR2504 and MR2510 are Motorola Preferred Devices
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OCR Scan
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MR250Q/D
R2500/D
R2501
R2506
motorola button diode
R-2501
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diode sy 164 dl
Abstract: diode sy 164 02N2222 b6045
Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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MBR6035
MBR6045
MBR6045
diode sy 164 dl
diode sy 164
02N2222
b6045
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