ALL K3667 Search Results

ALL K3667 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R7F701390EAFP		Renesas Electronics Corporation	All-in-one Automotive Safety Microcontrollers for Low-end Chassis System
R7F701391EAFP		Renesas Electronics Corporation	All-in-one Automotive Safety Microcontrollers for Low-end Chassis System
R7F701389EAFP		Renesas Electronics Corporation	All-in-one Automotive Safety Microcontrollers for Low-end Chassis System
R7F701388EAFP		Renesas Electronics Corporation	All-in-one Automotive Safety Microcontrollers for Low-end Chassis System
FC3860		Renesas Electronics Corporation	5.8GHz All-in-One SoC Including RF Transceiver, DSRC Modem & MCU

ALL K3667 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K3667 Abstract: toshiba k3667 2SK3667 transistor compatible k3667 Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667	PDF
K3667 Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667	PDF
toshiba k3667 Abstract: K3667 ALL k3667 K366 2SK3667 Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667	PDF
toshiba k3667 Abstract: K3667 ALL k3667 2SK3667 Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667	PDF
K3667 Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent Text: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent	PDF