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    AGR21030E Price and Stock

    Advanced Semiconductor Inc AGR21030EF

    RF MOSFET Transistors 2.11-2.17GHz 7Watt Gain 14.5dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR21030EF
    • 1 $54.96
    • 10 $46.71
    • 100 $43.62
    • 1000 $43.62
    • 10000 $43.62
    		Get Quote

    AGR21030E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR21030E TriQuint Semiconductor 30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21030EF Agere Systems FET, 90W, 2.110GHz-2.17GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21030EF Agere Systems 30 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21030EU Agere Systems FET, 90W, 2.110GHz-2.17GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21030E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    AGR21030EF

    Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
    Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief April 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030EU AGR21030EF PB03-095RFPP PB03-070RFPP)

    AGR21030EF

    Abstract: AGR21030XF JESD22-C101A J622
    Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030EF AGR21030EF DS04-225RFPP DS04-200RFPP) AGR21030XF JESD22-C101A J622

    J605

    Abstract: No abstract text available
    Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605

    RF POWER MOSFET

    Abstract: J605 amphenol 24- 28 pf
    Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030EF RF POWER MOSFET J605 amphenol 24- 28 pf

    2.4 ghz mosfet

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030EU AGR21030EF Juncti10-12, DS04-036RFPP 2.4 ghz mosfet

    AGR21030E

    Abstract: AGR21030EF AGR21030EU JESD22-C101A
    Text: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF performance-12, DS04-200RFPP DS04-163RFPP) AGR21030EF AGR21030EU JESD22-C101A

    AGR21030E

    Abstract: AGR21030EF AGR21030EU JESD22-A114
    Text: Preliminary Data Sheet May 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF carr10-712-4106) DS02-277RFPP AGR21030EF AGR21030EU JESD22-A114

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM