Untitled
Abstract: No abstract text available
Text: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030E
PB03-170RFPP
PB03-091RFPP)
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T491C
Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235
Text: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19030EF
Hz--1990
AGR19030EF
DS04-224RFPP
DS04-158RFPP)
T491C
AGR19030XF
100B100JCA500X
JESD22-C101A
j598
SEMICONDUCTOR J598
W1235
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J56-1
Abstract: ep 55 transistor
Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19030EF
Hz--1990
J56-1
ep 55 transistor
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j561
Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
Text: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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Original
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AGR19030E
Hz--1990
AGR19030E
DS04-158RFPP
DS04-076RFPP)
j561
T491C
AGR19030XF
100B100JCA500X
AGR19030EF
AGR19030EU
JESD22-C101A
100B100
DSA0020680
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PDF
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