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    AG SMD TRANSISTOR Search Results

    AG SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AG SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCX70G

    Abstract: BCX70H BCX70J BCX70K SMD AJ aj smd npn
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ


    Original     		PDF OT-23 BCX70G BCX70H BCX70J BCX70K BCX70G BCX70J C-120 BCX70H BCX70K SMD AJ aj smd npn

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ


    Original     		PDF OT-23 BCX70G BCX70H BCX70J BCX70K BCX70G BCX70J C-120

    shear force 0603

    Abstract: thermistor ptc smd 0805
    Text: PTC thermistors as limit temperature sensors SMD, EIA case sizes 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: October 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the


    Original     		PDF

    EIA 0603

    Abstract: B59601A0075A062 B59601A0085A062 E69802 ptc a601
    Text: PTC thermistors as limit temperature sensors SMD, EIA case sizes 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: November 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PTC thermistors as limit temperature sensors SMD, EIA case sizes 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: January 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the


    Original     		PDF

    shear force 0603

    Abstract: No abstract text available
    Text: PTC thermistors as limit temperature sensors SMD, EIA case sizes 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: February 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the


    Original     		PDF

    THERMISTOR 4.7

    Abstract: B59601A0075A062 B59601A0085A062 E69802
    Text: PTC thermistors Limit temperature sensors, SMD, EIA case size 0402, 0603 and 0805 with ±3 °C and ±5 °C tolerance Series/Type: Date: April 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the


    Original     		PDF

    B59601A0075A062

    Abstract: A601 B59601 B59601A0085A062 B59601A0095A062 B59601A0105A062 B59601A0115A062 B59601A0125A062 B59601A0135A062 PTC Epcos B59601
    Text: PTC thermistors Limit temperature sensors, SMD, EIA size 0603, ±5 °C tolerance Series/Type: B59601 Date: July 2006  EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		PDF B59601 B59601A0075A062 A601 B59601 B59601A0085A062 B59601A0095A062 B59601A0105A062 B59601A0115A062 B59601A0125A062 B59601A0135A062 PTC Epcos B59601

    ptc a601

    Abstract: A601 B59601 B59601A0075B062 B59601A0085B062 B59601A0095B062 B59601A0105B062 B59601A0115B062 B59601A0125B062 B59601A0135B062
    Text: PTC thermistors Limit temperature sensors, SMD, EIA size 0603, ±3 °C tolerance Series/Type: B59601 Date: July 2006  EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		PDF B59601 ptc a601 A601 B59601 B59601A0075B062 B59601A0085B062 B59601A0095B062 B59601A0105B062 B59601A0115B062 B59601A0125B062 B59601A0135B062

    7 flus 56

    Abstract: SMD CODE ag ptc a601 PTC Thermistor epcos vdr ptc overvoltage protections application note THERMISTOR 4.7 A601 B59601 B59601A0075A062
    Text: PTC thermistors Limit temperature sensors, SMD, EIA size 0603, ±5 °C tolerance Series/Type: Date: B59601 November 2005 EPCOS AG 2005. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		PDF B59601 7 flus 56 SMD CODE ag ptc a601 PTC Thermistor epcos vdr ptc overvoltage protections application note THERMISTOR 4.7 A601 B59601 B59601A0075A062

    7 flus 56

    Abstract: flus 56 PTC Epcos B59601
    Text: PTC thermistors Limit temperature sensors, SMD, EIA size 0603, ±3 °C tolerance Series/Type: Date: B59601 November 2005 EPCOS AG 2005. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		PDF B59601 7 flus 56 flus 56 PTC Epcos B59601

    UF4004 SMD

    Abstract: 1N4004 SMD S380 SMD smd sk24 1N4937 SMD UF4005 smd SK1100 MPSA42 SMD UF4002 SMD B500C2300-1500
    Text: Diotec Products for Set Top Boxes Version 2006-02-07 Diotec Products for Set Top Boxes Power Supply, Control and Protection Power Supply Standard and Schottky Rectifiers, Bridge Rectifiers Signal Processing / Control Zener Diodes, Small Signal Diodes and Transistors


    Original     		PDF TGL41-. LL4148. LL4151, BAW56, BAV70, BAV99, BAV100. BAV103 LL101, LL103, UF4004 SMD 1N4004 SMD S380 SMD smd sk24 1N4937 SMD UF4005 smd SK1100 MPSA42 SMD UF4002 SMD B500C2300-1500

    3N10L

    Abstract: 3N10L12 PG-TO263-3-2 3N10L1
    Text: Target Data Sheet IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70N10S3L-12 IPI70N10S3L-12 PG-TO263-3-2 3N10L 3N10L12 3N10L1

    VARISTOR k275

    Abstract: varistor s20k275 05 K275 varistor K275 S20K275 varistor s20 k275 S14K275 capacitor k275 K275 varistor VARISTOR S14 K275
    Text: Calculation Examples 4 Calculation examples 4.1 Switching off inductive loads The discharge of an inductor produces high voltages that endanger both the contact breaker switching transistor and the like and the inductor itself. According to equation 17 the energy stored


    Original     		PDF

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3

    3N06L06

    Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
    Text: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1


    Original     		PDF IPI80N06S3L-06 IPP80N06S3L-06 IPB80N06S3L-06 IPP80N06S3L-06 3N06L06 BIPP80N06S3L-06, 3N06L06 C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Text: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original     		PDF IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    146a marking diode

    Abstract: IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode
    Text: IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.7 mΩ ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P0305 IPI80P03P4-05 146a marking diode IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode

    4N0406

    Abstract: IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2
    Text: IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0406 IPI70N04S4-06 4N0406 IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2

    0603WAJ0103T5E

    Abstract: CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT
    Text: Datum: 15/07/2008 SL V 8 .10 SLSLLI33.RPT SL-S-D-12 Digital_Logic AG DETAIL-STUECKLISTE Nr. :811060-VO.3 MSEBX8 00. V0.3 von SCM Erstellt am Pos.:Lay: Art.Nr. 1 490520 Bezeichnung : Seite: CH-4542 Luterbach Nr.811060-V0.3. Lay.=0 Lay.=1 Lay.=2 Lay.=3 Lay.=4


    OCR Scan     		PDF SLSLLI33 SL-S-D-12 CH-4542 811060-VO 811060-V0 MSEBX800 LX800/520 LX800 0603WAJ0103T5E CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT