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    AFT27S010N Search Results

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    AFT27S010N Price and Stock

    NXP Semiconductors AFT27S010NT1

    RF MOSFET LDMOS 28V PLD-1.5W
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    Quest Components AFT27S010NT1 72
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    Rochester Electronics AFT27S010NT1 1
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    Win Source Electronics AFT27S010NT1 34,720
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    Rochester Electronics LLC AFT27S010NT1

    RF MOSFET LDMOS 28V PLD-1.5W
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    Freescale Semiconductor AFT27S010NT1

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    Bristol Electronics AFT27S010NT1 91
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    AFT27S010N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT27S010NT1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, FET RF NCH 65V 2700MHZ PLD1.5W Original PDF

    AFT27S010N Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    j350 TRANSISTOR

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.


    Original     		PDF MHT1006N MHT1006NT1 j350 TRANSISTOR