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    NXP Semiconductors AFT09MS007NT1

    RF MOSFET LDMOS 7.5V PLD-1.5W
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    AFT09MS007NT1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT09MS007NT1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC RF FET LANDMOBILE 7W PLD1.5W Original PDF

    AFT09MS007NT1 Datasheets Context Search

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    Z6 3pin

    Abstract: J262 AFT09MS007NT1
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1

    N/A9M07

    Abstract: No abstract text available
    Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from


    Original     		PDF AFT09MS007N AFT09MS007NT1 N/A9M07

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF