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    AC 128 TRANSISTOR Search Results

    AC 128 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AC 128 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN AD7195

    Abstract: transistor 2440 50 hz Oscillator FS19 REJ60 FS12 0con-200 Registers MIC4427 Application Notes amplifier strain gage discrete transistor
    Text: 4.8 kHz, Ultralow Noise, 24-Bit Sigma-Delta ADC with PGA and AC Excitation AD7195 FEATURES Chromatography PLC/DCS analog input modules Data acquisition Medical and scientific instrumentation AC or DC sensor excitation RMS noise: 8.5 nV at 4.7 Hz gain = 128


    Original     		PDF 24-Bit AD7195 MO-220-WHHD. 12408-A 32-Lead CP-32-11) AD7195BCPZ AD7195BCPZ-RL AD7195BCPZ-RL7 AN AD7195 transistor 2440 50 hz Oscillator FS19 REJ60 FS12 0con-200 Registers MIC4427 Application Notes amplifier strain gage discrete transistor

    Untitled

    Abstract: No abstract text available
    Text: 4.8 kHz, Ultralow Noise, 24-Bit Sigma-Delta ADC with PGA and AC Excitation AD7195 FEATURES Chromatography PLC/DCS analog input modules Data acquisition Medical and scientific instrumentation AC or DC sensor excitation RMS noise: 8.5 nV at 4.7 Hz gain = 128


    Original     		PDF 24-Bit AD7195 MO-220-WHHD. 12408-A 32-Lead CP-32-11) AD7195BCPZ AD7195BCPZ-RL AD7195BCPZ-RL7

    sysdrive 3g3mv parameters

    Abstract: 3G3MV-AB004 manual Sysdrive 3G3MV A4015 omron sysdrive 3g3iv
    Text: SYSDRIVE 3G3MV AC INVERTER • Omron’s new SYSDRIVE 3G3MV Series AC Inverter SHOWN AT ACTUAL SIZE - 128 mm 5.04 in. Giving you the perfect combination of advanced speed control and customized functionality in an extraordinarily compact housing! This powerful inverter really


    Original     		PDF 400Hz 8/99/20M sysdrive 3g3mv parameters 3G3MV-AB004 manual Sysdrive 3G3MV A4015 omron sysdrive 3g3iv

    Untitled

    Abstract: No abstract text available
    Text: 4.8 kHz, Ultralow Noise, 24-Bit Sigma-Delta ADC with PGA and AC Excitation AD7195 FEATURES Chromatography PLC/DCS analog input modules Data acquisition Medical and scientific instrumentation AC or DC sensor excitation RMS noise: 8.5 nV at 4.7 Hz gain = 128


    Original     		PDF 24-Bit AD7195 MO-220-WHHD. 12408-A 32-Lead CP-32-11) AD7195BCPZ AD7195BCPZ-RL AD7195BCPZ-RL7

    FX3G-24M

    Abstract: FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M
    Text: Specifications /// MITSUBISHI ELECTRIC Product Information EBG 196-EN Specifications FX3G-14M„ FX3G-24M„ I/O points Max. 128 direct addressing and max. 128 remote I/O Power supply FX3G 100–240 V AC +10 % / -15 % , 50/60 Hz Program memory 32,000 steps EEPROM (internal), exchangeable EEPROM memory cassette with loader function


    Original     		PDF 196-EN FX3G-14M FX3G-24M IL-49001 IL-42160 ZA-1600 D-40880 24743-A FX3G-24M FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 1/2014 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1008H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1008HR5 MMRF1008HSR5 N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1008H MMRF1008HR5 MMRF1008HSR5 MMRF1008HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies


    Original     		PDF MMRF1007H MMRF1007HR5 MMRF1007HSR5 MMRF1007HR5

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3

    Freescale Xtrinsic

    Abstract: C182 MRF6V12500H
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 Freescale Xtrinsic C182

    ATC100B1R0CT500XT

    Abstract: Variable Gain Amplifiers freescale MRF6VP121KHR6 LDMOS push pull
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed


    Original     		PDF MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 ATC100B1R0CT500XT Variable Gain Amplifiers freescale LDMOS push pull

    r2561

    Abstract: MRF6V12500H A114 A115 AN1955 C101 JESD22 MRF6V12500HR3 MRF6V12500HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3 r2561 MRF6V12500H A114 A115 AN1955 C101 JESD22 MRF6V12500HSR3

    GRM31CR72A105K

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 1, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500H GRM31CR72A105K

    wiring diagram OMRON CPM1A-30CDR

    Abstract: CPM1A-30CDR-A omron CPM1-CIF01 rs 232 manual cpm1a cable OMRON CPM1A-30CDR manual CPM1-CIF01 CPM1A-40CDR-A CPM1A-20EDR CPM1A-TS101-DA TS101DA
    Text: R Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include AC inputs/relay outputs, DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the


    Original     		PDF 1-800-55-OMRON wiring diagram OMRON CPM1A-30CDR CPM1A-30CDR-A omron CPM1-CIF01 rs 232 manual cpm1a cable OMRON CPM1A-30CDR manual CPM1-CIF01 CPM1A-40CDR-A CPM1A-20EDR CPM1A-TS101-DA TS101DA

    G2225X7R225KT3AB

    Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB MRF6V12250HSR3 AN1955 J162 250GX-0300-55-22

    G2225X7R225KT3AB

    Abstract: ATC100B330 ATC100B9R1CT500XT ATC100B102 96012 ad255 960-1215mhz A115 AN1955 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 1, 7/2009 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		PDF MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB ATC100B330 ATC100B9R1CT500XT ATC100B102 96012 ad255 960-1215mhz A115 AN1955 JESD22

    germanium transistor ac 128

    Abstract: transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127
    Text: N ICH T FÜR N E U E N T W IC K L U N G E N AC 127 GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäres Paar Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert*


    OCR Scan     		PDF VX720043 germanium transistor ac 128 transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127

    AC128

    Abstract: transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor
    Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechani sehe Daten: Gehäuse: Metall, JEDEC T0-1, 1 A 3 DIN 41 871


    OCR Scan     		PDF AC128 transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor

    1307 TRANSISTOR

    Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 1307 TRANSISTOR H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 IC VS 1307

    germanium transistor ac 128

    Abstract: AC 128 pnp transistor AC128 AC128K germanium transistoren transistor ac 128 valvo valvo transistoren AC 128 valvo germanium
    Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 K GERMANIUM - PNP - TRANSISTOR für Endstufen als Transistorpaar für Gegentakt-B-Schaltungen Mechanische Daten: Gehäuse: Metall, JEDEC TO-1, 1 A 3 nach DIN 41 871 mit ) Kühlklotz Alle Elektroden sind vom Gehäuse isoliert.


    OCR Scan     		PDF Ko11ektor-SperrSpannung germanium transistor ac 128 AC 128 pnp transistor AC128 AC128K germanium transistoren transistor ac 128 valvo valvo transistoren AC 128 valvo germanium

    photo interrupter module

    Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan     		PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    valvo

    Abstract: valvo b8 320 valvo transistoren NTC Valvo ac128 valvo ntc AC127 AC 128 C3320 ScansUX7
    Text: NICHT FÜR N E U E N T W IC K L U N G E N TRANSISTORSATZ Unter der Typenbezeichnung 40 809 wird ein kompletter Transistorsatz für gle i chst romgekoppe1te Iransformatorlose K omplementär-Endstufen ge liefert. Der Transistorsatz besteht aus AC 127 Vorstufe


    OCR Scan     		PDF