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    ABM30

    Abstract: No abstract text available
    Text: BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to form a junction. These diodes are designed for applications up to 40 GHz for microwave integrated circuits and hybrid ele­


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    "Advanced Semiconductor, Inc"

    Abstract: ADVANCED SEMICONDUCTOR ABP1 ABL9001
    Text: 02 58354 A D V A N C E D S E M I C O N D U C T O R ADVANCED SEM ICO ND UC TOR 92D 00100 Ì2 D Ó-f DE|G25fl35M GD0 Q1DG t. | BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are 'manufactured by the deposition of a suitable barrier


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