abb traction motor
Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the
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CH-5600
1768/138a
29palms
abb traction motor
diode 6.5 kv
5SMY 12M4500
76E-12
IGBT 6500 V
86M1280
5SMY86J1280
ABB IGBT
76J1280
76M12
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schematic diagram igbt inverter welding machine
Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3
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CH-5600
5SYA2053-02
the calculation of the power dissipation for the igbt and the inverse diode in circuits
"the calculation of the power dissipation for the igbt and the inverse diode in circuits"
ABB IGBT
ABB IGBT inverter
5SYA2042
5sna 1200e330100
transistor book
5SYA2043
ABB IGBT part number explanation
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1200G330100
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability
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1200G330100
5SYA1563-01
CH-5600
1200G330100
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5SNA 1600N170100
Abstract: 5SYA1564-01 ic 082 specifications MJ7200 2039
Text: VCE IC = = 1700 V 1600 A ABB HiPakTM IGBT Module 5SNA 1600N170100 Doc. No. 5SYA1564-01 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1600N170100
5SYA1564-01
CH-5600
5SNA 1600N170100
ic 082 specifications
MJ7200
2039
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5SNE0800M170100
Abstract: 5SNE 0800M170100 0800M170100
Text: VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100 Doc. No. 5SYA1590-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0800M170100
5SYA1590-00
660kW)
CH-5600
5SNE0800M170100
5SNE 0800M170100
0800M170100
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5SYA2039
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1421-00 12-2011 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2000J170300
CH-5600
5SYA2039
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5SNA
Abstract: IGBT 6500 IC da 5SNA0750G650300
Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power
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0750G650300
CH-5600
5SNA
IGBT 6500
IC da
5SNA0750G650300
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0150P450300
CH-5600
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5SLD 0600J650100
Abstract: 0600J650100
Text: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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0600J650100
CH-5600
5SLD 0600J650100
0600J650100
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-02 09-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability
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1200G330100
5SYA1563-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-04 01-2014 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0600G650100
5SYA1558-04
CH-5600
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ic 082 specifications
Abstract: No abstract text available
Text: VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1800E170100
CH-5600
ic 082 specifications
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IGBT CHIP 600V ABB
Abstract: ABB IGBT diode 1200V 2400E-12
Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Oct 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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2400E120100
5SYA1561-00
CH-5600
IGBT CHIP 600V ABB
ABB IGBT diode 1200V
2400E-12
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1417-01 11-2011 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2400E170305
CH-5600
2400E170305
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 800 A ABB HiPakTM IGBT Module 5SNA 0800J450300 Doc. No. 5SYA1402-01 Mar. 12 • Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling
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0800J450300
5SYA1402-01
UL1557,
E196689
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1700 V 800 A ABB HiPak IGBT Module 5SND 0800M170100 Doc. No. 5SYA1589-01 Apr 14 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling
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0800M170100
5SYA1589-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 800 A ABB HiPak IGBT Module 5SNA 0800N330100 Doc. No. 5SYA 1591-02 04-2014 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling
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0800N330100
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0600G650100
5SYA1558-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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1200E330100
5SYA1556-04
CH-5600
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5SYA2039
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0500J650300
CH-5600
0500J650300|
5SYA2039
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5SND0800M170100
Abstract: No abstract text available
Text: VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SND 0800M170100 Doc. No. 5SYA1589-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0800M170100
5SYA1589-00
CH-5600
5SND0800M170100
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fus20
Abstract: abb hipak 5SYA2039 igbt 3 KA c2120 c1840 5SNA0400J650100
Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0400J650100
CH-5600
fus20
abb hipak
5SYA2039
igbt 3 KA
c2120
c1840
5SNA0400J650100
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