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    abb traction motor

    Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
    Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the


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    PDF CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12

    schematic diagram igbt inverter welding machine

    Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
    Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality


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    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
    Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3


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    PDF CH-5600 5SYA2053-02 the calculation of the power dissipation for the igbt and the inverse diode in circuits "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation

    1200G330100

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


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    PDF 1200G330100 5SYA1563-01 CH-5600 1200G330100

    5SNA 1600N170100

    Abstract: 5SYA1564-01 ic 082 specifications MJ7200 2039
    Text: VCE IC = = 1700 V 1600 A ABB HiPakTM IGBT Module 5SNA 1600N170100 Doc. No. 5SYA1564-01 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 1600N170100 5SYA1564-01 CH-5600 5SNA 1600N170100 ic 082 specifications MJ7200 2039

    5SNE0800M170100

    Abstract: 5SNE 0800M170100 0800M170100
    Text: VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100 Doc. No. 5SYA1590-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 0800M170100 5SYA1590-00 660kW) CH-5600 5SNE0800M170100 5SNE 0800M170100 0800M170100

    5SYA2039

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1421-00 12-2011 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


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    PDF 2000J170300 CH-5600 5SYA2039

    5SNA

    Abstract: IGBT 6500 IC da 5SNA0750G650300
    Text: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 PRELIMINARY Doc. No. 5SYA 1600-00 Apr 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power


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    PDF 0750G650300 CH-5600 5SNA IGBT 6500 IC da 5SNA0750G650300

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


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    PDF 3600E170300 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability


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    PDF 0150P450300 CH-5600

    5SLD 0600J650100

    Abstract: 0600J650100
    Text: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


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    PDF 0600J650100 CH-5600 5SLD 0600J650100 0600J650100

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-02 09-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


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    PDF 1200G330100 5SYA1563-02 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-04 01-2014 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability


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    PDF 0600G650100 5SYA1558-04 CH-5600

    ic 082 specifications

    Abstract: No abstract text available
    Text: VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 1800E170100 CH-5600 ic 082 specifications

    IGBT CHIP 600V ABB

    Abstract: ABB IGBT diode 1200V 2400E-12
    Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Oct 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 2400E120100 5SYA1561-00 CH-5600 IGBT CHIP 600V ABB ABB IGBT diode 1200V 2400E-12

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1417-01 11-2011 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


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    PDF 2400E170305 CH-5600 2400E170305

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 800 A ABB HiPakTM IGBT Module 5SNA 0800J450300 Doc. No. 5SYA1402-01 Mar. 12 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


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    PDF 0800J450300 5SYA1402-01 UL1557, E196689 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1700 V 800 A ABB HiPak IGBT Module 5SND 0800M170100 Doc. No. 5SYA1589-01 Apr 14 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  Industry standard package  High power density  AlSiC base-plate for high power cycling


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    PDF 0800M170100 5SYA1589-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 800 A ABB HiPak IGBT Module 5SNA 0800N330100 Doc. No. 5SYA 1591-02 04-2014 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  Industry standard package  High power density  AlSiC base-plate for high power cycling


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    PDF 0800N330100 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


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    PDF 0600G650100 5SYA1558-02 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


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    PDF 1200E330100 5SYA1556-04 CH-5600

    5SYA2039

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability


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    PDF 0500J650300 CH-5600 0500J650300| 5SYA2039

    5SND0800M170100

    Abstract: No abstract text available
    Text: VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SND 0800M170100 Doc. No. 5SYA1589-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


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    PDF 0800M170100 5SYA1589-00 CH-5600 5SND0800M170100

    fus20

    Abstract: abb hipak 5SYA2039 igbt 3 KA c2120 c1840 5SNA0400J650100
    Text: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability


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    PDF 0400J650100 CH-5600 fus20 abb hipak 5SYA2039 igbt 3 KA c2120 c1840 5SNA0400J650100