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    Bulgin RFSMAA4JAADQ

    CONN SMA J FLNG MNT 4HOLE
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    OTTO Engineering Inc K4AADQEABA

    Toggle Switches 1-C1) NONE 2-C5 SPDT Bat Handle
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    OTTO Engineering Inc K4AADQDADA

    Toggle Switches 1-C1) NONE 2-C4 SPDT Bat Handle
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    Pizzato Elettrica Srl E2 1PTRS1AADQ

    Triple lower flush pushbutton, with marking | Pizzato USA E2 1PTRS1AADQ
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    Pizzato Elettrica Srl E2 1PDRL1AADQ

    Double lower flush pushbutton, with marking | Pizzato USA E2 1PDRL1AADQ
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    AADQ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AADQ24LTEB KOA Speer Electronics IC TERMINATOR NETWORK Original PDF
    AADQ24TTEB KOA Speer Electronics IC TERMINATOR NETWORK Original PDF

    AADQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX6897AAZT/V T

    Abstract: MAX6896AALT MAX6897
    Text: EVALUATION KIT AVAILABLE MAX6895MAX6899 Ultra-Small, Adjustable Sequencing/ Supervisory Circuits General Description Features The MAX6895MAX6899 is a family of small, low-power, voltage-monitoring circuits with sequencing capability. These miniature devices offer tremendous flexibility with


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    PDF MAX6895â MAX6899 MAX6899 MAX6897AAZT/V T MAX6896AALT MAX6897

    Transistor TT 2246

    Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
    Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23


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    PDF 3/SOT-23 6/SOT-23 10/uMAX 3/SC-70 Transistor TT 2246 TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ

    jd 1801 data sheet

    Abstract: AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ
    Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − August 31, 2003 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A IM3−2.1 FZEF SOT23−3 MAX 809L UR AA SOT23−3 LM


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    PDF OT23-3 SC70-5 SC70-4 SC70-3 SC70-3143 jd 1801 data sheet AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ

    toshiba laptop schematic diagram

    Abstract: acer motherboard circuit diagram MAX1270 C source code MAX11871 mp 9141 es dc-dc lm324 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic ACER laptop schematic diagram L-band down converter for satellite tuner wideband acer laptop MOTHERBOARD Chip Level MANUAL acer laptop motherboard circuit diagram
    Text: Welcome to the Maxim Full-Line Data Catalog. We hope you find this CD-ROM a helpful tool for selecting the best Maxim IC for your design. This CD-ROM contains: The Maxim Full-Line Data Catalog The menu to the left of this page lists the available documents. Use the small


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    PDF

    MAX6896AALT

    Abstract: No abstract text available
    Text: EVALUATION KIT AVAILABLE MAX6895MAX6899 Ultra-Small, Adjustable Sequencing/Supervisory Circuits General Description The MAX6895MAX6899 is a family of small, low-power, voltage-monitoring circuits with sequencing capability. These miniature devices offer tremendous flexibility with


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    PDF MAX6895â MAX6899 MAX6899 MAX6896AALT

    Untitled

    Abstract: No abstract text available
    Text: =• = IBM13M32734BCD Preliminary 32M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: i -2 6 0 ,-3 6 0 | Reg. i Buff. ; Reg. ! Buff DIMM CAS Latency


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    PDF IBM13M32734BCD 168-Pin 32Mx72 66/100MHz PC100 13M32734BCD

    Untitled

    Abstract: No abstract text available
    Text: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 j Device Latency j Clock Frequency j -260 | -360 I 3 j 2 ; 2 66 j 100 5 100 j


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    PDF IBM13M16734BCD 168-Pin 16Mx72 66/100MHz PC100 19L7292 E93875A 9L7292

    Untitled

    Abstract: No abstract text available
    Text: IBM13M13734BCA 128M x 72 2-B an k R eg istered /B u ffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM • Performance: i -260 CL=2 ! -360 CL=3 I -360 CL=2 ji Units: :. :.:. :.:.


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    PDF IBM13M13734BCA 168-Pin 128Mx72 66/100MHz PC100 13M13734BCA

    Untitled

    Abstract: No abstract text available
    Text: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 i -260 Ì -360 ! -360 ! Units | Device Latency Clock Frequency


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    PDF IBM13M16734BCD 168-Pin 16Mx72 66/100MHz PC100

    A49AN

    Abstract: adq38 360ac In400I
    Text: I =¥= =• = IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 16Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications


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    PDF 168-Pin 16Mx64/72 PC100 66MHz IBM13N16644HC IBM13N16734HC A49AN adq38 360ac In400I

    11-CQ2

    Abstract: No abstract text available
    Text: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK


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    PDF IBM13N4649JC IBM13N4739JC 4Mx64/72 11-CQ2

    IC 0342

    Abstract: MH16S64DAMD A92X
    Text: Prelim inary Spec. MITSUBISHI LSis Some contents are subject to change without notice. MH16S64DAMD -6,-7,-8 1 0 7 3 7 41824-B IT 16777216 - W ORD BY 64-B IT S ynchronous DRAM DESCRIPTION The MH1 6S 64D A M D is 1 677721 6 - word by 64-bit Synchronous DRAM m odule. This consists of


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    PDF MH16S64DAMD 073741824-BIT 64-BIT 6S64DAMD 133MHz 100MHz MIT-DS-0342-0 IC 0342 A92X

    MCM40100

    Abstract: MCM40L100 MCM514400
    Text: Order this data sheet by MCM40100/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40100S and MCM40L100S are 40M, dynamic random access memory


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    PDF MCM40100/D MCM40100S MCM40L100S 72-lead MCM514400 40L100 MCM40100S80 MCM40100S10 MCM40100SG80 MCM40100 MCM40L100

    Untitled

    Abstract: No abstract text available
    Text: = = = • = IB M 1 3 M 6 4 7 3 4 C C A Preliminary 64M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM ! | -75A Reg 4 | DIMM CAS Latency i f CK iW : • • • • •


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    PDF 168-Pin 64Mx72 100MHz 133MHz 13M64734CCA

    Untitled

    Abstract: No abstract text available
    Text: IBM13N2649JC IBM13N2739JC Preliminary 2M X 64/72 1 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency jfcK I Clock Frequency


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    PDF IBM13N2649JC IBM13N2739JC 2Mx64/72 75H1990 SA14-4713-01

    Untitled

    Abstract: No abstract text available
    Text: IBM13M32734BCB 32M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM : -75A I Reg : DIMM CAS Latency : fCK Ha C I: Clock Frequency : ; Units | 4 ; 133 Ì 100 j MHz ! 7.5 i


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    PDF IBM13M32734BCB 168-Pin 32Mx72

    ADQ45

    Abstract: AADQ44 13N4649
    Text: Discontinued 12/38 » last order; 9/99 las! ship IBM13N4649JC IBM13N4739JC 4M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Mem­ ory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications


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    PDF IBM13N4649JC IBM13N4739JC 168-Pin 4Mx64/72 PC100 66MHz ADQ45 AADQ44 13N4649

    dq35j

    Abstract: No abstract text available
    Text: IBM13T8644MPE 8M x 64 PC100 SDRAM SO DIMM Preliminary Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Performance: PC100 -360 CAS Latency fcK Clock Frequency tcK Clock Cycle *AC | Clock Access Tim e |


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    PDF IBM13T8644MPE 8Mx64 PC100 PC100 dq35j

    Untitled

    Abstract: No abstract text available
    Text: IBM13M32734BCA Preliminary 32M X 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM -75A ! DIMM CAS Latency • • • • • • • s Clock Cycle tAC \ Clock Access Tim e


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    PDF IBM13M32734BCA 168-Pin 32Mx72 133MHz A14-4716-01-b

    ADQ37

    Abstract: No abstract text available
    Text: I =¥= =• = IBM13N4644MC IBM13N4734MC Preliminary 4M x 64/72 1 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only


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    PDF 168-Pin 4Mx64/72 PC100 66MHz IBM13N4644MC IBM13N4734MC ADQ37

    Untitled

    Abstract: No abstract text available
    Text: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Mem­ ory Module • 8Mx72 Synchronous DRAM DIMM • Performance: 10 ^ ck I Clock Frequency 10 0 ^ ck I Clock Cycle t/\c i Units ; 3 CAS Latency j Clock Access Tim e I


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    PDF IBM13N8739CC 168-Pin 8Mx72

    MCM36256-80

    Abstract: MCM36256 M/MCM36256S-80
    Text: NOV i 4 '99ft] Order this data sheet by MCM36256/D MOTOROLA • SEMICONDUCTOR " TECHNICAL DATA MCM36256 Advance Information 256K x 36 Bit Dynamic Random Access Memory Module The MCM36256S is a 9M, dynamic random access memory DRAM module or­ ganized as 262,144 x 36 bits. The module is a 72-lead single-in-line memory module


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    PDF 199ft] MCM36256/D MCM36256S 72-lead MCM514256A 18-lead MCM36256S70 MCM36256S80 MCM36256S10 MCM36256-80 MCM36256 M/MCM36256S-80

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMY721630BEG-80 T EN T A T IV E T O S H IB A H YBR ID D IG ITAL INTEG RATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721630BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404BFT DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY721630BEG-80 216-WORD 72-BIT THMY721630BEG TC59S6404BFT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: I = = = = ¥ = = = ’ = IB M 1 3 N 4 6 4 4 M C IB M 1 3 N 4 7 3 4 M C Preliminary 4M x 64/72 1 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications


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    PDF 168-Pin 4Mx64/72 PC100 66MHz IBM13N4644MC IBM13N4734MC 19L7121