V6340R
Abstract: No abstract text available
Text: R EM MICROELECTRONIC - MARIN SA V6340 Ultra Low Cost 3-Pin Microprocessor Reset Description Applications The V6340 monitors the supply voltage of any electronic system, and generates the appropriate Reset signal. The threshold must be chosen to the minimum allowed voltage
|
Original
|
V6340
V6340
V6340R
|
PDF
|
marking AAAO
Abstract: V6340R aaao sot-23-6
Text: R EM MICROELECTRONIC - MARIN SA V6340 Ultra Low Cost 3-Pin Microprocessor Reset Description Applications The V6340 monitors the supply voltage of any electronic system, and generates the appropriate Reset signal. The threshold must be chosen to the minimum allowed voltage
|
Original
|
V6340
V6340
marking AAAO
V6340R
aaao sot-23-6
|
PDF
|
V6340R
Abstract: V6340FSP3B V6340N V6340RSP3B V6340D V6340RTO3E 33164 marking AAAC marking aaab aaaP
Text: R EM MICROELECTRONIC - MARIN SA V6340 Ultra Low Cost 3-Pin Microprocessor Reset Description Applications The V6340 monitors the supply voltage of any electronic system, and generates the appropriate Reset signal. The threshold must be chosen to the minimum allowed voltage
|
Original
|
V6340
V6340
V6340R
V6340FSP3B
V6340N
V6340RSP3B
V6340D
V6340RTO3E
33164
marking AAAC
marking aaab
aaaP
|
PDF
|
IC 4047 pin diagram
Abstract: 1-10V current sink IC 4047 BE pin diagram aaao
Text: VZÀ WHITE /M ICROELECTRONICS WPN641006UD1-10VG 8M BYTE 1M x64 Synchronous DRAM (3.3V Supply) Unbuffered DIM M M ODULE ADVANCED* FEATURES GENERAL DESCRIPTION • M a xim um fre q u e n c y = 100M H z (tcc=10ns) The W h ite M ic ro e le c tro n ic s W PN 641006U D 1-10V G is a 1M x 64
|
OCR Scan
|
WPN641006UD1-10VG
641006U
IC 4047 pin diagram
1-10V current sink
IC 4047 BE pin diagram
aaao
|
PDF
|
AOOA
Abstract: 2316E MM52116
Text: Character Generators MM52116FDW, MM52116FDX Character Generators General Description Features The M M 52116FD W , M M 5 21 1 6 F D X are 128-character, N-channel, silicon-gate character generators designed pri marily fo rC R T display applications. The M M 5 21 1 6 F D W /
|
OCR Scan
|
MM52116FDW,
MM52116FDX
52116FD
128-character,
MM52116FDX
128-character
2316E
AOOA
MM52116
|
PDF
|
TC59WM807BFT
Abstract: No abstract text available
Text: TOSHIBA THMD51E20B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E20B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM807BFT DRAMs and PLL/Registers on a printed circuit board.
|
OCR Scan
|
THMD51
E20B70
864-WORD
72-BIT
THMD51E20B
TC59WM807BFT
72-bit
|
PDF
|
MM2316E
Abstract: MM2716 MM52116FDW-D D24C MM52116FDW-N MM52116FDX-D MM52116FDX-N MM52116 can obd tac l2
Text: General Description Features The M M 52116FD W , M M 5 21 1 6 F D X are 128-character, N-channel, silicon-gate character generators designed p ri m a rily fo r CRT display applications. The M M 5 21 1 6 F D W / M M 5 21 1 6 F D X provide 5x7 and 7 x 9 row scan character
|
OCR Scan
|
MM52116FDW,
MM52116FDX
128-character,
MM52116FDW/
128-character
MM2316E
MM2716
MM52116FDW-D
D24C
MM52116FDW-N
MM52116FDX-D
MM52116FDX-N
MM52116
can obd
tac l2
|
PDF
|
CG5004L-1
Abstract: LM 74160 74LSXX IC 7004A
Text: CRT 7004 STANDARD MICROSYSTEMS CORPORM !QÜ<^B^H jU. PC F A M IL Y Dot Matrix Character Generator 128 Characters of 7 x 11 Bits FEATURES □ On chip character g enerator mask program m able 128 C haracters 7 x 1 1 Dot m atrix block □ On chip video shift register
|
OCR Scan
|
7004B
7004C
400ns
CG5004L-1
0DB00D0
CG5004L-1
LM 74160
74LSXX IC
7004A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN5915A CMOS IC L C 7 5 8 1 1 E , 7 5 8 1 1 W 1/8 to 1/10 Duty Dot Matrix LCD Display Controller/Driver Overview Package Dimensions T he LC7581 IE and L C 75811W are 1/8 to 1/10 duty dot unit: mm m atrix L C D display co n tro ller/d riv ers th a t sup p o rts the
|
OCR Scan
|
EN5915A
LC7581
5811W
3174-QFP80E
75811E
LC75811E
5811W
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA THMD25E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25E30B is a 33,554,432-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of nine TC59WM807BFT DRAMs and PLL/Registers on a printed circuit board.
|
OCR Scan
|
THMD25E30B70
THMD25E30B
432-word
72-bit
TC59WM807BFT
72-bit
THMD25E30B)
|
PDF
|
ks0066f00
Abstract: aeon 3000 KS0066F05 KS0066F59 KS0066 KS0066F06 TT 2158 KS0066F03
Text: KS0066 16 COM/40 S E G DRIVER & C O N TRO LLER FOR DOT MATRIX LCD INTRODUCTION The KS0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • • • • • Character type dot matrix LCD driver & controller
|
OCR Scan
|
KS0066
COM/40
KS0066
32kinds
KSOO66CFOO,
ks0066f00
aeon 3000
KS0066F05
KS0066F59
KS0066F06
TT 2158
KS0066F03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM71V16655AT8M 16Mx64, 16Mx8 based, PC100 DESCRIPTION The Hynix HYM71V16655AT8M Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
|
OCR Scan
|
HYM71V16655AT8M
16Mx64,
16Mx8
PC100
HYM71V16655AT8M
16Mx64bits
16Mx8bits
400mil
54pin
168pin
|
PDF
|
KS0076B00
Abstract: V/din 28545
Text: KS0076B CMOS DIGITAL INTEGRATED CIRCUIT DOT MATRIX LCD CONTROLLER & DRIVER 80 QFP The KS0076B is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver 16 common and 40 segment signal
|
OCR Scan
|
KS0076B
KS0076B
KS0076B-00:
64-QFP-1420D
Q0230
0D220bfl
98-STAB-35mm
120-STAB-35mm
KS0076B00
V/din 28545
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POSTIROMC N H JSIR IE5 BELIEVES THE DATA ON THIS DRMHNG TO K RELIABLE, SM C E THE TECHNICAL INFORMATION IS OMEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H IS OWN D6CREIW N AND RBK. POSIfRONIC W DU5TRES ASSUM ES NO R E SP O N SIB L E FOR RESULTS OBTAINED OR DAMAGES
|
OCR Scan
|
SK4179
PL26M
|
PDF
|
|
|
AT59C11
Abstract: No abstract text available
Text: ATHEL CORP M3E D 1074 17 7 DGDISOM 1 fflATM A T 5 9 C 1 1 /1 2 /1 3 7 -V 6 -/3 -2 7 Features • Low V oltage and S tandard V oltage O peration 5.0 V V c c = 4.5 V to 5.5 V 3.0 V (V cc = 2.7 V to 5.5 V) U ser S electab le Internal O rganization 1K: 1 2 8 x 8 o r 6 4 x 1 6
|
OCR Scan
|
AT59C11/12/13
128x8
64x16
256x8
128x16
512x8
256x16
AT59C11-10PM
AT59C12-10PC
AT59C11
|
PDF
|
bd501
Abstract: character generator 6572 MCM6571 ym oca cgob BCQB
Text: MCM6570 MCM6571 MCM6571A MCM6572 thru MCM6579 8192-BIT READ ONLY MEMORIES MOS ROW S E LEC T C H A R A C TE R G E N E R A TO R S IN -C H A N N E L , L O W T H R E S H O L D T h e M C M 6 5 7 0 is a m a s k -p ro g ra m m a b le 8 1 9 2 -b it horizontal-sear» r o w
|
OCR Scan
|
MCM6570
MCM6571
MCM6571A
MCM6572
MCM6579
8192-BIT
bd501
character generator 6572
ym oca
cgob
BCQB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: * Clockworks PRELIMINARY SY89801 A HP PA-8000 CLOCK SO URC E SYNERQY SEMICONDUCTOR FEATURES DESCRIPTION 3.3V, - 1 .9V power suppies Differential LVPECL clock input Differential HSTL/LVPECL outputs Compatible with HP PA-8000 microprocessors Low-jitter source for all PA-8000 required timing
|
OCR Scan
|
PA-8000
SY89801
44-pin
SY89801A
100-132MHz,
1000pF
|
PDF
|
THMY25E10A70
Abstract: No abstract text available
Text: T O S H IB A THMY25E10A70,75,80 TENTATIVE T O S H IB A H Y B R ID D IG ITA L IN T EG R A T ED C IRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E10A is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of
|
OCR Scan
|
THMY25E10A70
432-WORD
72-BIT
THMY25E10A
TC59SM704AFT
72-bit
Y25E10A70
|
PDF
|
MCM6670P
Abstract: 2114 MCM MCM6674P
Text: MOTOROLA MOS 128c X 7 X 5 CH A R A CTER G EN ERATO R N -C H A N N E L, S IL IC O N G A T E The MCM 6670 is a mask-programmable horizontal-scan (row select) character generator containing 128 characters in a 5 X 7 matrix. A 7-bit address code is used to select one of the 128 available
|
OCR Scan
|
MCM6670.
18-Pin
MCM6670P
2114 MCM
MCM6674P
|
PDF
|
D018
Abstract: D019 D032 D051 THMY7232F0EG-75
Text: TOSHIBA THMY7232F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.
|
OCR Scan
|
THMY7232F0EG-75
432-WORD
72-BIT
THMY7232F0EG
TC59SM704FT
72-bit
outp32F0EG-75
D018
D019
D032
D051
|
PDF
|
D018
Abstract: D019 D032 D051 THMY51E10B70
Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
|
OCR Scan
|
THMY51E10B70
864-WORD
72-BIT
THMY51E10B
TC59SM804BFT
72-bit
aY51E10B70
D018
D019
D032
D051
|
PDF
|
D038
Abstract: D018 D019 D032 D051 THMY7232F0EG-75 PC133 registered reference design
Text: TOSHIBA THMY7232F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.
|
OCR Scan
|
THMY7232F0EG-75
432-WORD
72-BIT
THMY7232F0EG
TC59SM704FT
72-bit
outpu32F0EG-75
D038
D018
D019
D032
D051
PC133 registered reference design
|
PDF
|
ks0066f00
Abstract: Jzc 40F KSOO66FOO KS0066F04 KS0066 KS0066F LBGD bcc-aa ks0065 KS0066F06
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The K S0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.
|
OCR Scan
|
KS0066
KS0066
32kinds
KSQ066F00,
00207D4
ks0066f00
Jzc 40F
KSOO66FOO
KS0066F04
KS0066F
LBGD
bcc-aa
ks0065
KS0066F06
|
PDF
|
D018
Abstract: D019 D032 D051 THMY51E10B70
Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
|
OCR Scan
|
THMY51E10B70
864-WORD
72-BIT
THMY51E10B
TC59SM804BFT
72-bit
aY51E10B70
D018
D019
D032
D051
|
PDF
|
