Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 10 to 1200 MHz A64/ SMA64 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses
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SMA64
MIL-STD-883
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TRANSISTOR A64
Abstract: a64 TRANSISTOR SMA64 CA64
Text: A64 / SMA64 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses
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SMA64
MIL-STD-883
TRANSISTOR A64
a64 TRANSISTOR
SMA64
CA64
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MBS 6-B5
Abstract: CY7C960 Family Users Guide VIC64 Users interrupt vhdl ld 18 CY7C960 CY7C961 Cypress VMEbus FF000000 MD32
Text: Using the Slave VIC CY7C960/961 Many VME boards, especially I/O Local Interrupts boards, need only be aware of VME Slave transactions. Most A64/A40 Support commercially available VME interface chips are caĆ pable of both Master and Slave VME transactions
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CY7C960/961)
A64/A40
CY7C964
EEEEEE00"
MBS 6-B5
CY7C960 Family Users Guide
VIC64 Users
interrupt vhdl
ld 18
CY7C960
CY7C961
Cypress VMEbus
FF000000
MD32
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marking A64 amplifier
Abstract: A64 sot23-5 transistor ic equivalent book
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
marking A64 amplifier
A64 sot23-5
transistor ic equivalent book
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ADS805
Abstract: OPA642 OPA643 OPA643P 1RF 630
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
ADS805
OPA642
OPA643P
1RF 630
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ADS805
Abstract: OPA642 OPA643 OPA643P 5v audio amplifier
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
ADS805
OPA642
OPA643P
5v audio amplifier
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ADS805
Abstract: OPA642 OPA643 OPA643P 1RF 630
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
ADS805
OPA642
OPA643P
1RF 630
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TRANSISTOR A64
Abstract: No abstract text available
Text: A64/SMA64 10 TO 1200 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · HIGH GAIN - TWO STAGES: 26 dB (TYP.) · ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2°, 100-1000 MHz · LOW VSWR: 1.2:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)*
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A64/SMA64
SMA64
TRANSISTOR A64
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Untitled
Abstract: No abstract text available
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
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SOT23-5 MARKING V4
Abstract: opa 275
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
SOT23-5 MARKING V4
opa 275
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carbon composition resistors
Abstract: PI sot23-5 fast photodiode amplifier ADS805 OPA642 OPA643 OPA643P 1RF 630
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
carbon composition resistors
PI sot23-5
fast photodiode amplifier
ADS805
OPA642
OPA643P
1RF 630
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Untitled
Abstract: No abstract text available
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
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ADS805
Abstract: OPA642 OPA643 OPA643P 1RF 630 CURRENT TRANSFORMER transimpedance
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
ADS805
OPA642
OPA643P
1RF 630
CURRENT TRANSFORMER transimpedance
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1RF 630
Abstract: ADS805 OPA642 OPA643 OPA643P OPA643PB MARKING VB SOT23-5
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
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OPA643
90dBc
800MHz
OT23-5
OPA643
DEM-OPA64XP-N
OPA643P
OPA643PB
DEM-OPA64XU-N
1RF 630
ADS805
OPA642
OPA643PB
MARKING VB SOT23-5
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RF TRANSISTOR 1.5 GHZ A64
Abstract: TRANSISTOR A64 A64 marking amplifier MMIC A64 marking SGA-6489 marking A64 amplifier MMIC transistor tl 187 RF 1.5 GHZ A64 RF TRANSISTOR A64
Text: Product Description Stanford Microdevices SGA-6489 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6489
SGA-6489
DC-3500
EDS-100621
RF TRANSISTOR 1.5 GHZ A64
TRANSISTOR A64
A64 marking amplifier
MMIC A64 marking
marking A64 amplifier
MMIC
transistor tl 187
RF 1.5 GHZ A64
RF TRANSISTOR A64
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TRANSISTOR A64
Abstract: RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking SGA-6486 A64 marking amplifier marking A64 amplifier
Text: Product Description Stanford Microdevices SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6486
SGA-6486
DC-4500
EDS-100615
TRANSISTOR A64
RF TRANSISTOR 1.5 GHZ A64
MMIC A64 marking
A64 marking amplifier
marking A64 amplifier
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RF TRANSISTOR 1.5 GHZ A64
Abstract: MMIC A64 marking A64 marking amplifier
Text: Product Description Stanford Microdevices SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6486
EDS-100615
RF TRANSISTOR 1.5 GHZ A64
MMIC A64 marking
A64 marking amplifier
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vme 3u board standards
Abstract: CY7C960 CY7C961 CY7C964 FF000000 MD32 VME64 vme bus specification vhdl Cypress VMEbus Interface Handbook CY7C960 Family Users Guide
Text: faxid: 5709 Using the Slave VIC CY7C960/961 Many VME boards, especially I/O boards, need only be aware of VME Slave transactions. Most commercially available VME interface chips are capable of both Master and Slave VME transactions and require some local intelligence, such as a
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CY7C960/961)
vme 3u board standards
CY7C960
CY7C961
CY7C964
FF000000
MD32
VME64
vme bus specification vhdl
Cypress VMEbus Interface Handbook
CY7C960 Family Users Guide
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vme bus specification vhdl
Abstract: VIC64 Users CY7C960 CY7C961 CY7C964 FF000000 MD32 VIC64 VME64 vhdl code for simple microprocessor
Text: faxid 5709 Using the Slave VIC CY7C960/961 Many VME boards, especially I/O boards, need only be aware of VME Slave transactions. Most commercially available VME interface chips are capable of both Master and Slave VME transactions and require some local intelligence, such as a
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CY7C960/961)
vme bus specification vhdl
VIC64 Users
CY7C960
CY7C961
CY7C964
FF000000
MD32
VIC64
VME64
vhdl code for simple microprocessor
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TRANSISTOR A64
Abstract: MMBT pnp
Text: MPS A64/MPSW64/MMBT A64 2 3 National Semiconductor MPSW64 MPSA64 MMBTA64 TO- 9 2 T L / G /1 0 1 0 Q - 5 T L / G /1 0 1 0 0 - 1 PNP Darlington Transistor Electrical Characteristics T * = 25‘ C unless otherw ise noted Param eter Sym bol Min Max Units OFF C HA R A C TER ISTIC S
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A64/MPSW64/MMBT
MPSA64
MPSW64
MMBTA64
100fxA
TRANSISTOR A64
MMBT pnp
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pt 100 - to92
Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
Text: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a
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MPS-A63,
MPS-A64
MPS-A63
MPS-A63
100mA
100kHz)
300ns
pt 100 - to92
pt 100 to92
MPS-A64
MPSA63
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WJ-A64
Abstract: wj 508 WJA64 BC 148 TRANSISTOR TRANSISTOR "BC 258" TRANSISTOR BC 252 transistor BC 148
Text: uuU A64 / SMA64 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. HIGH GAIN - TWO STAGES: 26 dB (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°,100-1000 MHz ♦ LOW VSWR: 1.2:1 (TYP.) Outline Drawings
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SMA64
Input/Out25
1-800-WJ1
WJ-A64
wj 508
WJA64
BC 148 TRANSISTOR
TRANSISTOR "BC 258"
TRANSISTOR BC 252
transistor BC 148
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WJ-A64
Abstract: No abstract text available
Text: WJ-A64 / SMA64 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER m ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. HIGH GAIN - TWO STAGES: 26 dB (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2°, 100-1000 MHz ♦ LOW VSWR: 1.2:1 (TYP.) Outline Drawings
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WJ-A64
SMA64
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transistor TA78
Abstract: TA57 ta76 ic TA76 TA54/TA57/TA60/TA61/TA64/TA76/TA78 ta64
Text: h -7 > y 7s £ /T ra n sisto rs TA54/T A57/T A60/T A61 /T A64/T A76/T A78 T A 5 4 /T A 5 7 /T A 6 0 /T A 6 1 T A 6 4 /T A 7 6 /T A 78 1 f c f T i i - ' f i ' - i - M y ' =i > Epitaxial Planar Silicon Transistor Arrays • W F ^ T liill/ D im e n s io n s U n it: mm)
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TA54/T
A57/T
A60/T
A64/T
A76/T
12pin
TA54/TA57/TA60/TA61
/TA64/T
A76/TA78
transistor TA78
TA57
ta76 ic
TA76
TA54/TA57/TA60/TA61/TA64/TA76/TA78
ta64
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