zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
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zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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D1N916
Abstract: la1 d22 a65 d1n916a EPM 205 thermal printer controller jeida v4.1 GD75232SOP virge GD75232S txc 14.318MHZ GD 75232 DATASHEET
Text: Point of Sale Terminal Design Guide Application Note May 1998 Order Number: 273170-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability
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100uF
470pF
LGS260-DO
D1N916
la1 d22 a65
d1n916a
EPM 205 thermal printer controller
jeida v4.1
GD75232SOP
virge
GD75232S
txc 14.318MHZ
GD 75232 DATASHEET
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marking B43 diode SCHOTTKY
Abstract: mosfet a06 marking B26 diode SCHOTTKY marking B34 diode SCHOTTKY LGS260-DO DIODE B93 950554-00x marking B47 diode SCHOTTKY diode marking j35 be1 marking diode
Text: 5 4 3 2 1 Evaluation Platform System Electronic s Board D D Revision D THIS SCHEMATIC IS PROVIDED "AS IS" WITH NO WARRANTIES WHATSOEVER,NCLUDING I ANY WARRANTY OF MERCHANTABILITY, FITNESS FOR ANY PARTICULAR PURPOSE , OR ANY WARRANTY OTHERWISE ARISING OUT OF PROPOSAL, SPECIFICATION OR
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400PIN
marking B43 diode SCHOTTKY
mosfet a06
marking B26 diode SCHOTTKY
marking B34 diode SCHOTTKY
LGS260-DO
DIODE B93
950554-00x
marking B47 diode SCHOTTKY
diode marking j35
be1 marking diode
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A37 diode
Abstract: laser diode to56 dfb laser diode cwdm diode a37 diode marking A39
Text: DATASHEET | APRIL 2012 FIBER OPTICS EMCORE’s Model 3935 DFB laser in TO-can offers a low cost solution for linear fiberoptic links. These components can be cooled with external thermo-electric coolers for high stability, or run without TEC’s to reduce power consumption. The
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IEC-60825-1
935-1311-A-08:
1311nm
935-1311-A-10:
A37 diode
laser diode to56
dfb laser diode cwdm
diode a37
diode marking A39
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Untitled
Abstract: No abstract text available
Text: ø16 A6 Series Miniature Control Units Light duty in short 22mm body length. ••Features IDEC’s original mechanism for snap-action switching. Suitable for a wide variety of office and factory aplications. ••The LED lamp contains a current-limiting resistor and a
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UL508
E55996
EN60947-5-1
GB14048
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2N3904 A30
Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
Text: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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diode u2 a54
Abstract: b34 DIODE schottky b37 diode 6CE3300KX B48 SOD diode b27 SOD-123 a34 WSL20105L000FEA b74 DIODE schottky SOD-123 B34
Text: 19-1009; Rev 0; 10/07 MAX5960L Evaluation Kit/ Evaluation System The MAX5960L evaluation kit EV kit is a fully assembled and tested surface-mount quad hot-plug controller printed-circuit board (PCB) with four PCI Express hotplug slots. The circuit uses a MAX5960L IC in an 80-pin
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MAX5960L
80-pin
MAX5960L
MAX5959A/MAX5959L/MAX5960A/MAX5960L
diode u2 a54
b34 DIODE schottky
b37 diode
6CE3300KX
B48 SOD
diode b27
SOD-123 a34
WSL20105L000FEA
b74 DIODE schottky
SOD-123 B34
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Untitled
Abstract: No abstract text available
Text: DATASHEET| JUNE 24, 2011 Model 3935 DFB O-Band CWDM Laser in TOcan Applications Video signal distribution in HFC and FTTx nodes O-Band CWDM Emcore’s Model 3935 DFB laser in TO-can offers a low cost solution for linear fiberoptic links. These components can be cooled with external
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935-1311-A-08:
1311nm
935-1311-A-10:
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A1W TRANSISTOR
Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201
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403SE
1N1183
1N1615
1N3743
1N4006
1N5002
1N1185
1N1616
1N3744
1N4007
A1W TRANSISTOR
N4001 diode
a39 diode
a1w* transistor
DIODE 1N1343
A1W diode
1N5815 Diode
diode 1N5825
TRANSISTOR A52
1N4822
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automobile drawings
Abstract: ERA17 a39 diode jv marking diode marking A39
Text: ERA17I1 .OA : Outline Drawings G E N E R A L U SE RECTIFIER DIODE • # € : ■ Features • flg'J'M&fclfc, bm m & y ? § A # 1'«TSi Ultra small package, possible for 5mm pitch automatic insertion. • S im S tt High reliability lil/jv : Marking ESD-proof
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ERA17
automobile drawings
a39 diode
jv marking
diode marking A39
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Untitled
Abstract: No abstract text available
Text: se MIKRO n Cases A 21. A 24 SEMIPACK 2 Case A 51 com. cath. = 2 Case A 52 (com. anode = 2) Case A 45 (K = 1, A = 2) Case A 54 (K = 1, A = 3) Section 2: SEMIPACK® Fast Diode Modules Type Vrrm Ifav Ifrms Tease ▲New type -r1 r- M6 V A °c A 25 °C A
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SKET330
SKKE400
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TR MARKING CODE K4N
Abstract: DIODE MARKING CODE K4N TTS-03
Text: E R A 1 7 I 1 .OA : Outline Drawings G E N E R A L U SE RECTIFIER DIODE • # € : ■ Features • flg'J'M &fclfc, b m m & y ? § A#1 ' «TSi Ultra small package, possible for 5mm pitch automatic insertion. • S im S tt High reliability lil/jv : Marking
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ETi30
I95t/R89)
TR MARKING CODE K4N
DIODE MARKING CODE K4N
TTS-03
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DIODE JS4
Abstract: ERA17 T460 JT MARKING MWRA t930 30S3 T151 T760 T810
Text: ERA17 1.0A : Outline Drawings GENERAL USE RECTIFIER DIODE • i t s : Features • S'J'32*fcK>, 5mm£y*- @ f t » A * ^ 8 6 Ultra small package, possible for 5mm pitch automatic insertion. • S ffJIS 'tt High reliability \ tjk : Marking ESD-proof * 7-=i-K : â
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l95t/R89
DIODE JS4
ERA17
T460
JT MARKING
MWRA
t930
30S3
T151
T760
T810
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a39 diode
Abstract: SDF4N90
Text: Æ ntron PRODUCT DEVICES.INC, N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l VDSS Drain-Gate Voltage VDGR (RGs=1.0Mn) (1) Gate-Source Voltage VGS Continuous Drain Current Continuous ID (Tc = 25“C) IDM Drain Current Pulsed(3)
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300ds,
SDF4N90
MIL-S-19500
a39 diode
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE FBA50CA45/50 UL;E76102 M is a dual power MOSFET module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink
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FBA50CA45/50
E76102
FBA50CA45
FBA50CA50
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Untitled
Abstract: No abstract text available
Text: ^ litr o n PR O DU CT DEVICES.INC. 1 1 7 7 BLUE H ERON BLVD. • RIVIERA BEACH, FLORIDA 33404 T E L : 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 900V, 4.0A, 2.4 Q SYMBOL Dr ai n-source Volt.(l)
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SDF4N90
SDF4N90
00A/jJ
300iiS,
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Untitled
Abstract: No abstract text available
Text: Æ lltran PRO D UCT DEVICES.INC. 11 77 B L U E H E R O N BLVD. • R I V I E R A B E AC H, F L O R I D A 3 3 4 0 4 T E L : 4 0 7 8 4 8 - 4 3 1 1 • T L X : 5 1 - 3 4 3 5 • F A X : (407) 8 6 3 - 5 9 4 8 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS
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3bflb02
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PH C5V1
Abstract: ph c6v2
Text: bbSB^l 0Q257bD 2n N AMER PHILI PS/DISCRETE «APX BZX84 SERIES b7E » J V SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a micro m iniature plastic envelope. They are available in three series; one to the international standardized E24 ± 5% range, one in a tolerance of
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0Q257bD
BZX84
tolerance25
bbS3T31
PH C5V1
ph c6v2
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marking z3p
Abstract: Y4P marking code marking z2p marking y6p marking z4p marking z8p b5v6 marking z5p marking z6P inverter LS600
Text: • ^53*131 00SS7b0 211 H A P X N AMER PHI LIPS /DISCRETE BZX84 SERIES L.7E ]> SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a micro m iniature plastic envelope. They are available in three series; one to the international standardized E24 (± 5% range, one in a tolerance of
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00SS7b0
BZX84
DDSS77D
marking z3p
Y4P marking code
marking z2p
marking y6p
marking z4p
marking z8p
b5v6
marking z5p
marking z6P
inverter LS600
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marking z3p
Abstract: marking y6p marking z4p C3V9 5T philips y6p marking z7p marking z2p marking z9p 24 marking z8p marking z9P
Text: m 7 1 1 G Ö 2 b D O h T T S b 017 • PHIN B Z X 84 SERIES J V_ SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a m icro m iniature plastic envelope. They are available in three series; one to the international standardized E24 ± 5% range, one in a tolerance o f
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711002b
BZX84
BZX84-C2V4
BZX84-C5V6
marking z3p
marking y6p
marking z4p
C3V9 5T
philips y6p
marking z7p
marking z2p
marking z9p 24
marking z8p
marking z9P
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PHII
Abstract: BZX79 bd ips A4v3 BZX79 5v1 A5V1 A9V1 a5v6 a1fr
Text: N AUER PHILIPS/DISCRETE b'iE D • bhSB'ìBl GGSbfiDb 030 H A P X BZX79 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-35 envelopes intended fo r use as low voltage stabilizers or voltage references. They are available in fo u r series; each series having a different tolerance rating, one series
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bbS3T31
BZX79
DO-35
400mW
7Z69448
bb53T31
0D2b62D
PHII
bd ips
A4v3
BZX79 5v1
A5V1
A9V1
a5v6
a1fr
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b9v1
Abstract: No abstract text available
Text: b^E D N AUER PHILIPS/DISCRETE b b 5 3 ^ 3 1 DDEbflDb D3Q H A P X I BZX79 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-35 envelopes intended fo r use as low voltage stabilizers or voltage references. They are available in fo u r series; each series having a different tolerance rating, one series
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BZX79
DO-35
bbS3T31
7Z59232
002bfllfl
bbS3R31
bb53T31
0D2b62D
b9v1
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BLX79
Abstract: BZ 6V2 BZX79 bzx79 2v7 A4v34 C3V0
Text: N AflER P H I L I P S / D I S C R E T E kiTE D • bhS3T31 GGEbfiDb 0 3 0 H A P X B Z X 7 9 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-35 envelopes intended for use as low voltage stabilizers or voltage references. They are available in four series; each series having a different tolerance rating, one series
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BZX79
DO-35
BLX79
BZ 6V2
bzx79 2v7
A4v34
C3V0
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