A1952 TRANSISTOR Search Results

A1952 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A1952 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
A1952 Abstract: transistor A1952 MARKING A1952 BTA1952I3 a1952 transistor C601I3 transistor BTC5103I3 Text: Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952I3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A	Original	PDF	C601I3 BTA1952I3 -100V BTC5103I3 O-251 UL94V-0 A1952 transistor A1952 MARKING A1952 BTA1952I3 a1952 transistor C601I3 transistor BTC5103I3
transistor A1952 Abstract: A1952 MARKING A1952 a1952 transistor A1952 R Q BTA1952J3 BTC5103J3 Text: Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952J3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A	Original	PDF	C601J3 BTA1952J3 -100V BTC5103J3 O-252 UL94V-0 transistor A1952 A1952 MARKING A1952 a1952 transistor A1952 R Q BTA1952J3 BTC5103J3
a1952 Abstract: transistor A1952 IC 4047 a1952 transistor IC 4047 datasheet MARKING A1952 BTA1952E3 Text: CYStech Electronics Corp. Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1952E3 Features • Low VCE sat , VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics	Original	PDF	C601E3-A BTA1952E3 O-220AB UL94V-0 a1952 transistor A1952 IC 4047 a1952 transistor IC 4047 datasheet MARKING A1952 BTA1952E3
A1952 Abstract: transistor A1952 BTA1952J3 BTC5103J3 MARKING A1952 Text: Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2004.09.17 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952J3 Features • Low VCE sat , VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A • Excellent DC current gain characteristics	Original	PDF	C601J3 BTA1952J3 BTC5103J3 O-252 UL94V-0 A1952 transistor A1952 BTA1952J3 BTC5103J3 MARKING A1952
2sa1952 Abstract: No abstract text available Text: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)	Original	PDF	2SA1952 SC-63) OT-428> 2SC5103 A1952 R1102A 2sa1952
A1757 Abstract: C5103 transistor A1952 2SA1757,A1757 Text: 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 Transistors I •F e a tu re s •A b s o lu te maximum ratings Ta—2 5 t 1) 2) 3) 4) Param eter C ollector-base v o lta le Coliector-em itter voitaae Em itter-base voltage High-speed Switching Transistor 2SA1952 / 2SA1906 / 2SA1757	OCR Scan	PDF	2SA1952 2SA1906 2SA1757 2SC5103 2SC4596 O-220FP A1757 C5103 transistor A1952 2SA1757,A1757